J. Semicond. > 2008, Volume 29 > Issue 10 > 1984-1987

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Effect of Vacancy on Nucleation for Oxygen Precipitation in Conventional and Nitrogen-Doped Czochralski Silicon

Jiang Hanqin, Ma Xiangyang, Yang Deren and Que Duanlin

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Abstract: The oxygen precipitation behaviors in conventional and nitrogen-doped Czochralski (NCZ) silicon subjected to the rapid thermal processing (RTP) at 1250℃ for 50s followed by the ramping anneal in different temperature intervals in the range from 600 to 1000℃ and isothermal annealing at 1000℃ are investigated. The results show that the RTP-induced vacancies enhance the nucleation of oxygen precipitates most significantly during the ramping anneal from 700 to 800℃ for conventional CZ silicon.Meanwhile,for NCZ silicon,the most significant vacancy-enhancement of nucleation of oxygen precipitates occurs during the ramping anneal from 800 to 900℃. Nitrogen is superior to vacancy for enhancement of oxygen precipitate nucleation at temperatures higher than 800℃. Furthermore,the internal gettering processes appropriate for CZ and NCZ silicon wafers based on the RTP and ramping anneal in the low temperature range are proposed.

Key words: Czochralski silicon oxygen precipitation nucleation vacancy

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    Received: 18 August 2015 Revised: 21 May 2008 Online: Published: 01 October 2008

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      Jiang Hanqin, Ma Xiangyang, Yang Deren, Que Duanlin. Effect of Vacancy on Nucleation for Oxygen Precipitation in Conventional and Nitrogen-Doped Czochralski Silicon[J]. Journal of Semiconductors, 2008, In Press. Jiang H Q, Ma X Y, Yang D R, Que D L. Effect of Vacancy on Nucleation for Oxygen Precipitation in Conventional and Nitrogen-Doped Czochralski Silicon[J]. J. Semicond., 2008, 29(10): 1984.Export: BibTex EndNote
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      Jiang Hanqin, Ma Xiangyang, Yang Deren, Que Duanlin. Effect of Vacancy on Nucleation for Oxygen Precipitation in Conventional and Nitrogen-Doped Czochralski Silicon[J]. Journal of Semiconductors, 2008, In Press.

      Jiang H Q, Ma X Y, Yang D R, Que D L. Effect of Vacancy on Nucleation for Oxygen Precipitation in Conventional and Nitrogen-Doped Czochralski Silicon[J]. J. Semicond., 2008, 29(10): 1984.
      Export: BibTex EndNote

      Effect of Vacancy on Nucleation for Oxygen Precipitation in Conventional and Nitrogen-Doped Czochralski Silicon

      • Received Date: 2015-08-18
      • Accepted Date: 2008-04-27
      • Revised Date: 2008-05-21
      • Published Date: 2008-11-11

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