| Citation: |
Su Shubing, Xu Anhuai, Liu Xinyu, Qi Ming, Liu Xunchun, Wang Runmei. A Novel InGaP/InGaAs/GaAs DHBT Grown by MBE Using Beryllium as p-Type Dopant[J]. Journal of Semiconductors, 2006, In Press.
Su S B, Xu A H, Liu X Y, Qi M, Liu X C, Wang R M. A Novel InGaP/InGaAs/GaAs DHBT Grown by MBE Using Beryllium as p-Type Dopant[J]. Chin. J. Semicond., 2006, 27(6): 1064.
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A Novel InGaP/InGaAs/GaAs DHBT Grown by MBE Using Beryllium as p-Type Dopant
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Abstract
We fabricate a novel InGaP/InGaAs/GaAs double hetero-junction bipolar junction (DHBT) with an InGaAs base for the first time in China. Good DC performance is obtained.The common-emitter DC current gain is 100,the offset voltage approximates 0.4V,the knee voltage is about 1.0V,and the open-base breakdown voltage is over 10V.The ideality factors for the base and collector current are 1.16 and 1.11 respectively.These results indicate that the InGaP/InGaAs/GaAs DHBTs are suitable for applications in low power-dissipation and high power.-
Keywords:
- MBE,
- InGaAs base,
- double hetero-junction bipolar junction
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References
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Proportional views
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