| Citation: |
Xu Yadong, Xu Lingyan, Wang Tao, Zha Gangqiang, Fu Li, Jie Wanqi, Sellin P. Charge transport performance of high resistivity CdZnTe crystals doped with In/Al[J]. Journal of Semiconductors, 2009, 30(8): 082002. doi: 10.1088/1674-4926/30/8/082002
Xu Y D, Xu L Y, Wang T, Zha G Q, Fu L, Jie W Q, Sellin P. Charge transport performance of high resistivity CdZnTe crystals doped with In/Al[J]. J. Semicond., 2009, 30(8): 082002. doi: 10.1088/1674-4926/30/8/082002.
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Charge transport performance of high resistivity CdZnTe crystals doped with In/Al
doi: 10.1088/1674-4926/30/8/082002
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Abstract
To evaluate the charge transport properties of as-grown high resistivity CdZnTe crystals doped with In/Al, the α particle spectroscopic response was measured using an un-collimated 241Am (5.48 MeV) radioactive sourceat room temperature. The electron mobility lifetime products (µτ)e of the CdZnTe crystals were predicted by fittingplots of photo-peak position versus electrical field strength using the single carrier Hecht equation. A TOF techniquewas employed to evaluate the electron mobility for CdZnTe crystals. The mobility was obtained by fitting the electrondrift velocities as a function of the electrical field strengths, where the drift velocities were achieved by analyzing therise-time distributions of the voltage pulses formed by a preamplifier. A fabricated CdZnTe planar detector based ona low In concentration doped CdZnTe crystal with (µτ)e = 2.3 × 10-3 cm2/V and µe = 1000 cm2/(V·s), respectively, exhibits an excellent γ-ray spectral resolution of 6.4% (FWHM = 3.8 keV) for an un-collimated 241Am @ 59.54 keV isotope. -
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