| Citation: |
Wu Hailei, Sun Guosheng, Yang Ting, Yan Guoguo, Wang Lei, Zhao Wanshun, Liu Xingfang, Zeng Yiping, Wen Jialiang. High-quality homoepitaxial layers grown on 4H-SiC at a high growth rate by vertical LPCVD[J]. Journal of Semiconductors, 2011, 32(4): 043005. doi: 10.1088/1674-4926/32/4/043005
Wu H L, Sun G S, Yang T, Yan G G, Wang L, Zhao W S, Liu X F, Zeng Y P, Wen J L. High-quality homoepitaxial layers grown on 4H-SiC at a high growth rate by vertical LPCVD[J]. J. Semicond., 2011, 32(4): 043005. doi: 10.1088/1674-4926/32/4/043005.
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High-quality homoepitaxial layers grown on 4H-SiC at a high growth rate by vertical LPCVD
doi: 10.1088/1674-4926/32/4/043005
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Abstract
High quality, homoepitaxial layers of 4H-SiC were grown on off-oriented 4H-SiC (0001) Si planes in a vertical low-pressure hot-wall CVD system (LPCVD) by using trichlorosilane (TCS) as a silicon precursor source together with ethylene (C2H4) as a carbon precursor source. The growth rate of 25–30 μm/h has been achieved at lower temperatures between 1500 and 1530 ℃. The surface roughness and crystalline quality of 50 μm thick epitaxial layers (grown for 2 h) did not deteriorate compared with the corresponding results of thinner layers (grown for 30 min). The background doping concentration was reduced to 2.13 × 1015 cm-3. The effect of the C/Si ratio in the gas phase on growth rate and quality of the epi-layers was investigated. -
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