Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 160-162

Effects of Oxygen Content on the Crystal Quality of ZnO Films Grown on Si by RF-Magnetron Sputtering

Ma Xiaocui, Liu Wenjun, Zhu Deliang, Cao Peijiang, Jiang Zongzhang and Xiao Huojie

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Abstract: We report the effects of the growth ambient on the crystal quality of ZnO films grown on Si by RF-magnetron sputtering using ZnO target.These films are highly c-axis oriented.Upon increasing the O2/(Ar+O2)ratio in the growing ambient,the deposition rate is decreased for ZnO films.The crystallinity and alignment of ZnO films are strongly dependent on O2/(At+O2) ratio,and the crystal quality of the ZnO films at O2/(At十O2) ratio≈0.45 is better than others.

Key words: ZnO thin filmsradio-frequency magnetron sputteringO2/(At+O2) ratio

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Ma Xiaocui, Liu Wenjun, Zhu Deliang, Cao Peijiang, Jiang Zongzhang, Xiao Huojie. Effects of Oxygen Content on the Crystal Quality of ZnO Films Grown on Si by RF-Magnetron Sputtering[J]. Journal of Semiconductors, 2007, In Press. Ma X C, Liu W J, Zhu D L, Cao P J, Jiang Z Z, Xiao H J. Effects of Oxygen Content on the Crystal Quality of ZnO Films Grown on Si by RF-Magnetron Sputtering[J]. Chin. J. Semicond., 2007, 28(S1): 160.Export: BibTex EndNote
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      Ma Xiaocui, Liu Wenjun, Zhu Deliang, Cao Peijiang, Jiang Zongzhang, Xiao Huojie. Effects of Oxygen Content on the Crystal Quality of ZnO Films Grown on Si by RF-Magnetron Sputtering[J]. Journal of Semiconductors, 2007, In Press.

      Ma X C, Liu W J, Zhu D L, Cao P J, Jiang Z Z, Xiao H J. Effects of Oxygen Content on the Crystal Quality of ZnO Films Grown on Si by RF-Magnetron Sputtering[J]. Chin. J. Semicond., 2007, 28(S1): 160.
      Export: BibTex EndNote

      Effects of Oxygen Content on the Crystal Quality of ZnO Films Grown on Si by RF-Magnetron Sputtering

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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