| Citation: |
Tan Hairen, You Jingbi, Zhang Shuguang, Gao Hongli, Yin Zhigang, Bai Yiming, Zhang Xiulan, Zhang Xingwang, Qu Sheng. Enhancement of ZnO ultraviolet emission by surface plasmon coupling using a rough NiSi2 layer synthesized by ion implantation[J]. Journal of Semiconductors, 2011, 32(10): 102002. doi: 10.1088/1674-4926/32/10/102002
Tan H R, You J B, Zhang S G, Gao H L, Yin Z G, Bai Y M, Zhang X L, Zhang X W, Qu S. Enhancement of ZnO ultraviolet emission by surface plasmon coupling using a rough NiSi2 layer synthesized by ion implantation[J]. J. Semicond., 2011, 32(10): 102002. doi: 10.1088/1674-4926/32/10/102002.
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Enhancement of ZnO ultraviolet emission by surface plasmon coupling using a rough NiSi2 layer synthesized by ion implantation
doi: 10.1088/1674-4926/32/10/102002
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Abstract
The calculation results of the surface plasmon (SP) energy and Purcell factor of ZnO/NiSi2 demonstrate the possibility of using NiSi2 to enhance the UV emission of ZnO by SP coupling. Experimentally, ZnO films were deposited on NiSi2 layers synthesized by ion implantation, and the roughness of the NiSi2 layers spans a large range from 3 to 38 nm, providing favorable conditions for investigating SP-mediated emission. An 11-fold emission enhancement from the ZnO film on the roughest NiSi2 layer was obtained, which indicates the possibility that metal silicide layers can be used both as an electrical contact and for emission enhancement.-
Keywords:
- ZnO film
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References
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