| Citation: |
Jiang Ran, Xie Erqing, Jia Changwen, Lin Hongfeng, Pan Xiaojun, Li Hui. Photoluminescence Characterization of HfON∶Tb Films with Sputtering[J]. Journal of Semiconductors, 2006, In Press.
Jiang R, Xie E Q, Jia C W, Lin H F, Pan X J, Li H. Photoluminescence Characterization of HfON∶Tb Films with Sputtering[J]. Chin. J. Semicond., 2006, 27(13): 169.
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Photoluminescence Characterization of HfON∶Tb Films with Sputtering
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Abstract
The HfON∶Tb films are deposited on p-Si by DC sputtering.The samples prepared are annealed at different temperatures.Fluorescence photospectrometer is employed to characterize the photoluminescence.We observe several strong photoluminescence spectra at room temperature in visible region.Different peaks show the different change and there is a slight blue shift with the change of the annealing temperature.The luminescence mechanism of the samples is discussed.We propose an energy transfer mechanism from HfON host to Tb3+ ions.Photoluminescence intensity is found to have well matching relation with the doping concentration of Tb3+ ions and will vanish with the certain concentration of Tb3+ ions.-
Keywords:
- HfON,
- photoluminescence,
- energy transfer,
- sputtering
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References
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Proportional views
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