Memristive feature and mechanism induced by laser-doping in defect-free 2D semiconductor materials

Xiaoshan Du; Shu Wang; Qiaoxuan Zhang; Shengyao Chen; Fengyou Yang; Zhenzhou Liu; Zhengwei Fan; Lijun Ma; Lei Wang; Lena Du; Zhongchang Wang; Cong Wang; Bing Chen; Qian Liu

doi:10.1088/1674-4926/24010036

J. Semicond. > In Press > doi: 10.1088/1674-4926/24010036

ARITCLES

Memristive feature and mechanism induced by laser-doping in defect-free 2D semiconductor materials

Xiaoshan Du^{1, 2, §}, Shu Wang^{2, §}, Qiaoxuan Zhang^{3, §}, Shengyao Chen^{2, 4, §}, Fengyou Yang², Zhenzhou Liu², Zhengwei Fan², Lijun Ma², Lei Wang⁵, Lena Du⁶, Zhongchang Wang⁷, Cong Wang^8,, Bing Chen^1, and Qian Liu^{2, 4,}

+ Author Affiliations

1. College of Electronic and Information Engineering, Shandong University of Science and Technology, Qingdao 266590, China
2. National Center for Nanoscience and Technology & University of Chinese Academy of Sciences, Beijing 100190, China
3. Hebei University of Water Resources and Electric Engineering Electrical Automation Department, 061001 Cangzhou, China
4. The MOE Key Laboratory of Weak-Light Nonlinear Photonics and International Sino-Slovenian Join Re-search Center on Liquid Crystal Photonics, TEDA Institute of Applied Physics and School of Physics, Nankai University, Tianjin 300457, China
5. College of Mathematics and Physics, Shandong Advanced Optoelectronic Materials and Technologies Engineering Laboratory, Qingdao University of Science and Technology, Qingdao 266061, China
6. Department of Physics, Capital Normal University, Beijing 100048, China
7. Department of Advanced Materials and Computing, International Iberian Nanotechnology Laboratory (INL), 4715-330 Braga, Portugal
8. College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China
^§Xiaoshan Du, Shu Wang, Qiaoxuan Zhang, and Shengyao Chen contributed equally to this work and should be considered as co-first authors.

Corresponding author: Cong Wang, wangcongphysics@mail.buct.edu.cn; Bing Chen, chenbing@sdust.edu.cn; Qian Liu, liuq@nanoctr.cn

Abstract: Memristors as non-volatile memory devices have gained numerous attentions owing to their advantages in storage, in-memory computing, synaptic applications, etc. In recent years, two-dimensional (2D) materials with moderate defects have been discovered to exist memristive feature. However, it is very difficult to obtain moderate defect degree in 2D materials, and studied on modulation means and mechanism becomes urgent and essential. In this work, we realized memristive feature with a bipolar switching and a configurable on/off ratio in a two-terminal MoS₂ device (on/off ratio ~100), for the first time, from absent to present using laser-modulation to few-layer defect-free MoS₂ (about 10 layers), and its retention time in both high resistance state and low resistance state can reach 2 × 10⁴ s. The mechanism of the laser-induced memristive feature has been cleared by dynamic Monte Carlo simulations and first-principles calculations. Furthermore, we verified the universality of the laser-modulation by investigating other 2D materials of TMDs. Our work will open a route to modulate and optimize the performance of 2D semiconductor memristive devices.

Key words: 2D-material memristor, laser doping, laser direct writing, memristive mechanism

References

[1]	Xu X W, Ding Y K, Hu S X, et al. Scaling for edge inference of deep neural networks. Nat Electron, 2018, 1, 216 doi: 10.1038/s41928-018-0059-3
[2]	Yoon J H, Wang Z R, Kim K M, et al. An artificial nociceptor based on a diffusive memristor. Nat Commun, 2018, 9, 417 doi: 10.1038/s41467-017-02572-3
[3]	Zidan M A, Strachan J P, Lu W D. The future of electronics based on memristive systems. Nat Electron, 2018, 1, 22 doi: 10.1038/s41928-017-0006-8
[4]	Sebastian A, Le Gallo M, Khaddam-Aljameh R, et al. Memory devices and applications for in-memory computing. Nat Nanotechnol, 2020, 15, 529 doi: 10.1038/s41565-020-0655-z
[5]	Xia Q F, Yang J J. Memristive crossbar arrays for brain-inspired computing. Nat Mater, 2019, 18, 309 doi: 10.1038/s41563-019-0291-x
[6]	Du L N, Wang Z C, Zhao G. Novel intelligent devices: Two-dimensional materials based memristors. Front Phys, 2022, 17, 23602 doi: 10.1007/s11467-022-1152-7
[7]	Zhou Z C, Yang F Y, Wang S, et al. Emerging of two-dimensional materials in novel memristor. Front Phys, 2021, 17, 23204 doi: 10.1007/s11467-021-1114-5
[8]	Nili H, Adam G C, Hoskins B, et al. Hardware-intrinsic security primitives enabled by analogue state and nonlinear conductance variations in integrated memristors. Nat Electron, 2018, 1, 197 doi: 10.1038/s41928-018-0039-7
[9]	Bertolazzi S, Bondavalli P, Roche S, et al. Nonvolatile memories based on graphene and related 2D materials. Adv Mater, 2019, 31, 1806663 doi: 10.1002/adma.201806663
[10]	Lee J H, Du C, Sun K, et al. Tuning ionic transport in memristive devices by graphene with engineered nanopores. ACS Nano, 2016, 10, 3571 doi: 10.1021/acsnano.5b07943
[11]	Liu S, Lu N D, Zhao X L, et al. Eliminating negative-SET behavior by suppressing nanofilament overgrowth in cation-based memory. Adv Mater, 2016, 28, 10623 doi: 10.1002/adma.201603293
[12]	Wang C, Xiao R C, Liu H Y, et al. Room-temperature third-order nonlinear Hall effect in Weyl semimetal TaIrTe₄. Natl Sci Rev, 2022, 9, nwac020 doi: 10.1093/nsr/nwac020
[13]	Euvrard J, Yan Y F, Mitzi D B. Electrical doping in halide perovskites. Nat Rev Mater, 2021, 6, 531 doi: 10.1038/s41578-021-00286-z
[14]	Shi Y Y, Liang X H, Yuan B, et al. Electronic synapses made of layered two-dimensional materials. Nat Electron, 2018, 1, 458 doi: 10.1038/s41928-018-0118-9
[15]	Tan X, Wang S, Zhang Q X, et al. Laser doping of 2D material for precise energy band design. Nanoscale, 2023, 15, 9297 doi: 10.1039/D3NR00808H
[16]	Wang X W, Wang B L, Zhang Q H, et al. Grain-boundary engineering of monolayer MoS₂ for energy-efficient lateral synaptic devices. Adv Mater, 2021, 33, 2170251 doi: 10.1002/adma.202170251
[17]	Wang Q H, Kalantar-Zadeh K, Kis A, et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat Nanotechnol, 2012, 7, 699 doi: 10.1038/nnano.2012.193
[18]	Islam M R, Kang N, Bhanu U, et al. Tuning the electrical property via defect engineering of single layer MoS₂ by oxygen plasma. Nanoscale, 2014, 6, 10033 doi: 10.1039/C4NR02142H
[19]	Nan H Y, Wang Z L, Wang W H, et al. Strong photoluminescence enhancement of MoS₂ through defect engineering and oxygen bonding. ACS Nano, 2014, 8, 5738 doi: 10.1021/nn500532f
[20]	Kang N, Paudel H P, Leuenberger M N, et al. Photoluminescence quenching in single-layer MoS₂ via oxygen plasma treatment. J Phys Chem C, 2014, 118, 21258 doi: 10.1021/jp506964m
[21]	Shen P C, Lin Y X, Su C, et al. Healing of donor defect states in monolayer molybdenum disulfide using oxygen-incorporated chemical vapour deposition. Nat Electron, 2022, 5, 28 doi: 10.1038/s41928-021-00685-8
[22]	Wang M, Cai S H, Pan C, et al. Robust memristors based on layered two-dimensional materials. Nat Electron, 2018, 1, 130 doi: 10.1038/s41928-018-0021-4

Fig. 1. (Color online) (a) Schematic diagram of the pristine MoS₂ memristor. (b) Schematic diagram of the laser-scanned half-area MoS₂ memristor. (c) HRS and LRS retention time test results. (d) Electrical performance test of the pristine MoS₂ memristor. (e) Electrical performance test of the laser-scanned half-area MoS₂ memristor. (f) Comparison of experimental data and simulation results of the set process.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) (a) AES analysis of pristine and laser-modulated MoS₂ with different laser grayscale values. (b) The memristive property of different grayscales modulated MoS₂ devices. (c) MoS₂ device after half-sided laser doped. (d) Conductive filament consists of vacancy formed after applying positive voltage (2 V) on the device, where the system performs a low resistance state (LRS). (e) Schematic calculation for the low doping case. (f) Conductive filament consists of vacancy that is broken after reversing the applied voltage, where system performs a high resistance state (HRS).

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) Schematic representation of the atomic structure, local density of states and their energy bands of MoS₂ with different oxygen doping levels. (a)−(c) Depict the atomic structure, local density of states and their energy band structures of pristine MoS₂. (d)−(f) Represent the atomic structure, local density of states and their energy band structures of MoS₂ with one S vacancy and one oxygen substitution on the right half plane. (g)−(i) Represent the atomic structure, local density of states and their energy band structures of MoS₂ with two sulfur vacancies and two oxygen substitutions on the right half plane. (j)−(l) Correspond the atomic structure, local density of states and their energy band structures of fully doped MoS₂.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) Optical microscopy imaging of samples after grey-scale scanning (a) MoS₂, (b) HfS₂, (c) WS₂ and the corresponding PL spectra of the samples (d) MoS₂, (e) HfS₂, (f) WS₂.

DownLoad: Full-Size Img PowerPoint

[1]	Xu X W, Ding Y K, Hu S X, et al. Scaling for edge inference of deep neural networks. Nat Electron, 2018, 1, 216 doi: 10.1038/s41928-018-0059-3
[2]	Yoon J H, Wang Z R, Kim K M, et al. An artificial nociceptor based on a diffusive memristor. Nat Commun, 2018, 9, 417 doi: 10.1038/s41467-017-02572-3
[3]	Zidan M A, Strachan J P, Lu W D. The future of electronics based on memristive systems. Nat Electron, 2018, 1, 22 doi: 10.1038/s41928-017-0006-8
[4]	Sebastian A, Le Gallo M, Khaddam-Aljameh R, et al. Memory devices and applications for in-memory computing. Nat Nanotechnol, 2020, 15, 529 doi: 10.1038/s41565-020-0655-z
[5]	Xia Q F, Yang J J. Memristive crossbar arrays for brain-inspired computing. Nat Mater, 2019, 18, 309 doi: 10.1038/s41563-019-0291-x
[6]	Du L N, Wang Z C, Zhao G. Novel intelligent devices: Two-dimensional materials based memristors. Front Phys, 2022, 17, 23602 doi: 10.1007/s11467-022-1152-7
[7]	Zhou Z C, Yang F Y, Wang S, et al. Emerging of two-dimensional materials in novel memristor. Front Phys, 2021, 17, 23204 doi: 10.1007/s11467-021-1114-5
[8]	Nili H, Adam G C, Hoskins B, et al. Hardware-intrinsic security primitives enabled by analogue state and nonlinear conductance variations in integrated memristors. Nat Electron, 2018, 1, 197 doi: 10.1038/s41928-018-0039-7
[9]	Bertolazzi S, Bondavalli P, Roche S, et al. Nonvolatile memories based on graphene and related 2D materials. Adv Mater, 2019, 31, 1806663 doi: 10.1002/adma.201806663
[10]	Lee J H, Du C, Sun K, et al. Tuning ionic transport in memristive devices by graphene with engineered nanopores. ACS Nano, 2016, 10, 3571 doi: 10.1021/acsnano.5b07943
[11]	Liu S, Lu N D, Zhao X L, et al. Eliminating negative-SET behavior by suppressing nanofilament overgrowth in cation-based memory. Adv Mater, 2016, 28, 10623 doi: 10.1002/adma.201603293
[12]	Wang C, Xiao R C, Liu H Y, et al. Room-temperature third-order nonlinear Hall effect in Weyl semimetal TaIrTe₄. Natl Sci Rev, 2022, 9, nwac020 doi: 10.1093/nsr/nwac020
[13]	Euvrard J, Yan Y F, Mitzi D B. Electrical doping in halide perovskites. Nat Rev Mater, 2021, 6, 531 doi: 10.1038/s41578-021-00286-z
[14]	Shi Y Y, Liang X H, Yuan B, et al. Electronic synapses made of layered two-dimensional materials. Nat Electron, 2018, 1, 458 doi: 10.1038/s41928-018-0118-9
[15]	Tan X, Wang S, Zhang Q X, et al. Laser doping of 2D material for precise energy band design. Nanoscale, 2023, 15, 9297 doi: 10.1039/D3NR00808H
[16]	Wang X W, Wang B L, Zhang Q H, et al. Grain-boundary engineering of monolayer MoS₂ for energy-efficient lateral synaptic devices. Adv Mater, 2021, 33, 2170251 doi: 10.1002/adma.202170251
[17]	Wang Q H, Kalantar-Zadeh K, Kis A, et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat Nanotechnol, 2012, 7, 699 doi: 10.1038/nnano.2012.193
[18]	Islam M R, Kang N, Bhanu U, et al. Tuning the electrical property via defect engineering of single layer MoS₂ by oxygen plasma. Nanoscale, 2014, 6, 10033 doi: 10.1039/C4NR02142H
[19]	Nan H Y, Wang Z L, Wang W H, et al. Strong photoluminescence enhancement of MoS₂ through defect engineering and oxygen bonding. ACS Nano, 2014, 8, 5738 doi: 10.1021/nn500532f
[20]	Kang N, Paudel H P, Leuenberger M N, et al. Photoluminescence quenching in single-layer MoS₂ via oxygen plasma treatment. J Phys Chem C, 2014, 118, 21258 doi: 10.1021/jp506964m
[21]	Shen P C, Lin Y X, Su C, et al. Healing of donor defect states in monolayer molybdenum disulfide using oxygen-incorporated chemical vapour deposition. Nat Electron, 2022, 5, 28 doi: 10.1038/s41928-021-00685-8
[22]	Wang M, Cai S H, Pan C, et al. Robust memristors based on layered two-dimensional materials. Nat Electron, 2018, 1, 130 doi: 10.1038/s41928-018-0021-4

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Received: 25 January 2024 Revised: 12 March 2024 Online: Accepted Manuscript: 27 March 2024Uncorrected proof: 28 March 2024

Article Navigation > Journal of Semiconductors > 2024 > Uncorrected proof

Xiaoshan Du, Shu Wang, Qiaoxuan Zhang, Shengyao Chen, Fengyou Yang, Zhenzhou Liu, Zhengwei Fan, Lijun Ma, Lei Wang, Lena Du, Zhongchang Wang, Cong Wang, Bing Chen, Qian Liu. Memristive feature and mechanism induced by laser-doping in defect-free 2D semiconductor materials[J]. Journal of Semiconductors, 2024, 45(7): 072701. doi: 10.1088/1674-4926/24010036 X S Du, S Wang, Q X Zhang, S Y Chen, F Y Yang, Z Z Liu, Z W Fan, L J Ma, L Wang, L N Du, Z C Wang, C Wang, B Chen, and Q Liu, Memristive feature and mechanism induced by laser-doping in defect-free 2D semiconductor materials[J]. J. Semicond., 2024, 45(7), 072701 doi: 10.1088/1674-4926/24010036Export: BibTex EndNote

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X S Du, S Wang, Q X Zhang, S Y Chen, F Y Yang, Z Z Liu, Z W Fan, L J Ma, L Wang, L N Du, Z C Wang, C Wang, B Chen, and Q Liu, Memristive feature and mechanism induced by laser-doping in defect-free 2D semiconductor materials[J]. J. Semicond., 2024, 45(7), 072701 doi: 10.1088/1674-4926/24010036

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Memristive feature and mechanism induced by laser-doping in defect-free 2D semiconductor materials

doi: 10.1088/1674-4926/24010036

Xiaoshan Du^{1, 2, §},
Shu Wang^{2, §},
Qiaoxuan Zhang^{3, §},
Shengyao Chen^{2, 4, §},
Fengyou Yang²,
Zhenzhou Liu²,
Zhengwei Fan²,
Lijun Ma²,
Lei Wang⁵,
Lena Du⁶,
Zhongchang Wang⁷,
Cong Wang^8,,
Bing Chen^1,,
Qian Liu^{2, 4,}

1.
College of Electronic and Information Engineering, Shandong University of Science and Technology, Qingdao 266590, China
2.
National Center for Nanoscience and Technology & University of Chinese Academy of Sciences, Beijing 100190, China
3.
Hebei University of Water Resources and Electric Engineering Electrical Automation Department, 061001 Cangzhou, China
4.
The MOE Key Laboratory of Weak-Light Nonlinear Photonics and International Sino-Slovenian Join Re-search Center on Liquid Crystal Photonics, TEDA Institute of Applied Physics and School of Physics, Nankai University, Tianjin 300457, China
5.
College of Mathematics and Physics, Shandong Advanced Optoelectronic Materials and Technologies Engineering Laboratory, Qingdao University of Science and Technology, Qingdao 266061, China
6.
Department of Physics, Capital Normal University, Beijing 100048, China
7.
Department of Advanced Materials and Computing, International Iberian Nanotechnology Laboratory (INL), 4715-330 Braga, Portugal
8.
College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China

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Author Bio:
Xiaoshan Du Xiaoshan Du received her bachelor's degree from Shandong University of Science and Technology in 2021 and is now studying for her master's degree at Shandong University of Science and Technology under the guidance of Bing Chen. She was jointly trained at the National Center of Nanoscience and Technology under the guidance of Qian Liu. Her research direction is to fabricate memristor devices by laser processing two-dimensional materials

Qian Liu Qian Liu, a Japanese Ph.D. in engineering, is a full-time professor at the National Center for Nanoscience and Technology and at the University of the Chinese Academy of Sciences. His research interests focus on laser−matter interaction, as well as the development of innovative equipment and new technologies related to novel micro/nano fabrications
Corresponding author: wangcongphysics@mail.buct.edu.cn; chenbing@sdust.edu.cn; liuq@nanoctr.cn
Received Date: 2024-01-25
Revised Date: 2024-03-12

Available Online: 2024-03-27

Abstract

Abstract

Memristors as non-volatile memory devices have gained numerous attentions owing to their advantages in storage, in-memory computing, synaptic applications, etc. In recent years, two-dimensional (2D) materials with moderate defects have been discovered to exist memristive feature. However, it is very difficult to obtain moderate defect degree in 2D materials, and studied on modulation means and mechanism becomes urgent and essential. In this work, we realized memristive feature with a bipolar switching and a configurable on/off ratio in a two-terminal MoS₂ device (on/off ratio ~100), for the first time, from absent to present using laser-modulation to few-layer defect-free MoS₂ (about 10 layers), and its retention time in both high resistance state and low resistance state can reach 2 × 10⁴ s. The mechanism of the laser-induced memristive feature has been cleared by dynamic Monte Carlo simulations and first-principles calculations. Furthermore, we verified the universality of the laser-modulation by investigating other 2D materials of TMDs. Our work will open a route to modulate and optimize the performance of 2D semiconductor memristive devices.
- 2D-material memristor,
- laser doping,
- laser direct writing,
- memristive mechanism

^§Xiaoshan Du, Shu Wang, Qiaoxuan Zhang, and Shengyao Chen contributed equally to this work and should be considered as co-first authors.

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References

[1]	Xu X W, Ding Y K, Hu S X, et al. Scaling for edge inference of deep neural networks. Nat Electron, 2018, 1, 216 doi: 10.1038/s41928-018-0059-3
[2]	Yoon J H, Wang Z R, Kim K M, et al. An artificial nociceptor based on a diffusive memristor. Nat Commun, 2018, 9, 417 doi: 10.1038/s41467-017-02572-3
[3]	Zidan M A, Strachan J P, Lu W D. The future of electronics based on memristive systems. Nat Electron, 2018, 1, 22 doi: 10.1038/s41928-017-0006-8
[4]	Sebastian A, Le Gallo M, Khaddam-Aljameh R, et al. Memory devices and applications for in-memory computing. Nat Nanotechnol, 2020, 15, 529 doi: 10.1038/s41565-020-0655-z
[5]	Xia Q F, Yang J J. Memristive crossbar arrays for brain-inspired computing. Nat Mater, 2019, 18, 309 doi: 10.1038/s41563-019-0291-x
[6]	Du L N, Wang Z C, Zhao G. Novel intelligent devices: Two-dimensional materials based memristors. Front Phys, 2022, 17, 23602 doi: 10.1007/s11467-022-1152-7
[7]	Zhou Z C, Yang F Y, Wang S, et al. Emerging of two-dimensional materials in novel memristor. Front Phys, 2021, 17, 23204 doi: 10.1007/s11467-021-1114-5
[8]	Nili H, Adam G C, Hoskins B, et al. Hardware-intrinsic security primitives enabled by analogue state and nonlinear conductance variations in integrated memristors. Nat Electron, 2018, 1, 197 doi: 10.1038/s41928-018-0039-7
[9]	Bertolazzi S, Bondavalli P, Roche S, et al. Nonvolatile memories based on graphene and related 2D materials. Adv Mater, 2019, 31, 1806663 doi: 10.1002/adma.201806663
[10]	Lee J H, Du C, Sun K, et al. Tuning ionic transport in memristive devices by graphene with engineered nanopores. ACS Nano, 2016, 10, 3571 doi: 10.1021/acsnano.5b07943
[11]	Liu S, Lu N D, Zhao X L, et al. Eliminating negative-SET behavior by suppressing nanofilament overgrowth in cation-based memory. Adv Mater, 2016, 28, 10623 doi: 10.1002/adma.201603293
[12]	Wang C, Xiao R C, Liu H Y, et al. Room-temperature third-order nonlinear Hall effect in Weyl semimetal TaIrTe₄. Natl Sci Rev, 2022, 9, nwac020 doi: 10.1093/nsr/nwac020
[13]	Euvrard J, Yan Y F, Mitzi D B. Electrical doping in halide perovskites. Nat Rev Mater, 2021, 6, 531 doi: 10.1038/s41578-021-00286-z
[14]	Shi Y Y, Liang X H, Yuan B, et al. Electronic synapses made of layered two-dimensional materials. Nat Electron, 2018, 1, 458 doi: 10.1038/s41928-018-0118-9
[15]	Tan X, Wang S, Zhang Q X, et al. Laser doping of 2D material for precise energy band design. Nanoscale, 2023, 15, 9297 doi: 10.1039/D3NR00808H
[16]	Wang X W, Wang B L, Zhang Q H, et al. Grain-boundary engineering of monolayer MoS₂ for energy-efficient lateral synaptic devices. Adv Mater, 2021, 33, 2170251 doi: 10.1002/adma.202170251
[17]	Wang Q H, Kalantar-Zadeh K, Kis A, et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat Nanotechnol, 2012, 7, 699 doi: 10.1038/nnano.2012.193
[18]	Islam M R, Kang N, Bhanu U, et al. Tuning the electrical property via defect engineering of single layer MoS₂ by oxygen plasma. Nanoscale, 2014, 6, 10033 doi: 10.1039/C4NR02142H
[19]	Nan H Y, Wang Z L, Wang W H, et al. Strong photoluminescence enhancement of MoS₂ through defect engineering and oxygen bonding. ACS Nano, 2014, 8, 5738 doi: 10.1021/nn500532f
[20]	Kang N, Paudel H P, Leuenberger M N, et al. Photoluminescence quenching in single-layer MoS₂ via oxygen plasma treatment. J Phys Chem C, 2014, 118, 21258 doi: 10.1021/jp506964m
[21]	Shen P C, Lin Y X, Su C, et al. Healing of donor defect states in monolayer molybdenum disulfide using oxygen-incorporated chemical vapour deposition. Nat Electron, 2022, 5, 28 doi: 10.1038/s41928-021-00685-8
[22]	Wang M, Cai S H, Pan C, et al. Robust memristors based on layered two-dimensional materials. Nat Electron, 2018, 1, 130 doi: 10.1038/s41928-018-0021-4

Memristive feature and mechanism induced by laser-doping in defect-free 2D semiconductor materials

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