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Recent progress of SiC UV single photon counting avalanche photodiodes

Linlin Su, Dong Zhou, Hai Lu, Rong Zhang and Youdou Zheng

+ Author Affiliations

 Corresponding author: Hai Lu, hailu@nju.edu.cn

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Abstract: 4H-SiC single photon counting avalanche photodiodes (SPADs) are prior devices for weak ultraviolet (UV) signal detection with the advantages of small size, low leakage current, high avalanche multiplication gain, and high quantum efficiency, which benefit from the large bandgap energy, high carrier drift velocity and excellent physical stability of 4H-SiC semiconductor material. UV detectors are widely used in many key applications, such as missile plume detection, corona discharge, UV astronomy, and biological and chemical agent detection. In this paper, we will describe basic concepts and review recent results on device design, process development, and basic characterizations of 4H-SiC avalanche photodiodes. Several promising device structures and uniformity of avalanche multiplication are discussed, which are important for achieving high performance of 4H-SiC UV SPADs.

Key words: SiCavalanche photodiodessingle photon countingultraviolet detection



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Fig. 1.  (Color online) A schematic of various applications for UV detectors.

Fig. 2.  (Color online) Schematic of the (a) basic device structure and (b) avalanche multiplication mechanism of a working APD.

Fig. 3.  (Color online) A schematic of gain–voltage curve of an APD working in either linear mode or Geiger mode.

Fig. 4.  The process of impact ionization in (a) linear mode and (b) Geiger mode.

Fig. 5.  (Color online) Area normalized DCR or DCP versus SPDE for SiC[20, 2529], GaN[12, 24] and Si APDs[23].

Fig. 6.  (Color online) Typical scanning electron microscopy image from SiC epitaxial layer after molten KOH etching.

Fig. 7.  (Color online) (a) IV and (b) DCR versus SPDE curves of four 4H-SiC APDs. From device A to D, EPDs in device active layers increase.

Fig. 8.  (Color online) The cross-sectional view of a SiC APD with bevel edge termination.

Fig. 9.  (Color online) The simulated 2D electric field distribution of (a) a vertical mesa SiC APD, and (b) a beveled mesa SiC APD under avalanche breakdown voltage. The inset shows the 1-D electrical field profile along the black line marked in the 2-D electrical field profile.

Fig. 10.  (Color online) Cross-sectional view of SiC APDs with a combined partial trench termination and deep trench isolation.

Fig. 11.  (Color online) The simulated 2-D electric field distribution of a partial trench termination APD under avalanche breakdown voltage. The inset shows the 1-D electrical field profile along the black line marked in the 2-D electrical field profile.

Fig. 12.  (Color online) The room temperature IV and gain–voltage characteristics of a 4H-SiC APD.

Fig. 13.  (Color online) Spectral response characteristics of a 4H-SiC APD at different bias.

Fig. 14.  Typical DCR versus SPDE curve of a 4H-SiC APD at room temperature.

Fig. 15.  (Color online) Variation of DCR and SPDE as a function of temperatures for a SiC APD.

Fig. 16.  (Color online) (a) Photocurrent of the three SiC APDs under same illumination condition at avalanche regime. (Inset) Top-view images of the three SiC APDs, which are denoted as APD 1, 2 and 3 respectively. (b) DCR-voltage and PCR-voltage characteristics of the three SiC APDs.

Fig. 17.  (Color online) Cross-sectional view of the recessed-window SiC APD.

Fig. 18.  (Color online) (a) Cross-sectional view of the SACM SiC APD. (b) Electric field profiles of SiC SACM APDs with reach-through structure and non-reach-through structure.

Fig. 19.  (Color online) The room temperature spectral response characteristics of the 4H-SiC SACM APD measured at different bias. Inset: spectral response characteristics plotted in linear scale.

Fig. 20.  (Color online) IV characteristics of 4H-SiC APDs formed by Al implantation.

Fig. 21.  (Color online) Capacitance-frequency characteristics of the SiC APDs formed by Al implantation as well as the SiC APDs fully formed by epitaxial growth.

Fig. 22.  Real time DCR and PCR spectra of a SiC APD at the same over-bias.

Fig. 23.  (Color online) The SPC mapping profiles of a SiC APD at different over-bias.

Fig. 24.  Hot carrier luminescence images of a SiC APD at different avalanche currents.

Fig. 25.  (Color online) (a) Schematic of a 4H-SiC wafer with 4° offcut angle and the electrical field direction of the fabricated SiC APD. (b) Schematic of carrier drift path within the 4H-SiC APD.

Table 1.   Comparison of physical properties for various semiconductors[1316].

Parameter 4H-SiC 6H-SiC 3C-SiC GaN Si
Bandgap (eV) 3.26 3 2.4 3.39 1.12
Saturation electron velocity (107 cm/s) 2 2 2 2.5 1
Electron mobility (cm2/(V·s)) 950 600 900 1000 1400
Hole mobility (cm2/(V·s)) 120 75 50 30 600
Dielectric constant (Å) 9.7 10 9.7 8.9 11.4
Thermal conductivity (W/(cm·K)) 4.9 4.9 3.2 1.5 1.5
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[1]
Razeghi M. Short-wavelength solar-blind detectors-Status, prospects, and markets. Proc IEEE, 2002, 90(6), 1006 doi: 10.1109/JPROC.2002.1021565
[2]
Campbell J C. Recent advances in avalanche photodiodes. J Lightwave Technol, 2016, 34(2), 278 doi: 10.1109/JLT.2015.2453092
[3]
Wang Y, Qian Y, Kong X. Photon counting based on solar-blind ultraviolet intensified complementary metal–oxide–semiconductor (ICMOS) for corona detection. IEEE Photonics J, 2018, 10(6), 1 doi: 10.1109/jphot.2018.2876514
[4]
Li B, Jiang W, Liang Y. Solar-blinded detector by UV radiation from missile plume. Aerosp Electron Warf, 2006, 22(06), 7
[5]
Chen H, Liu K, Hu L, et al. New concept ultraviolet photodetectors. Mater Today, 2015, 18(9), 493 doi: 10.1016/j.mattod.2015.06.001
[6]
Zamora D, Torres A. Method for outlier detection: a tool to assess the consistency between laboratory data and ultraviolet-visible absorbance spectra in wastewater samples. Water Sci Technol, 2014, 69(11), 2305 doi: 10.2166/wst.2014.139
[7]
Kumamoto Y, Fujita K, Smith N I, et al. Deep-UV biological imaging by lanthanide ion molecular protection. Biomed Opt Express, 2016, 7(1), 158 doi: 10.1364/BOE.7.000158
[8]
Razeghi M. Deep ultraviolet light-emitting diodes and photodetectors for UV communications. Proc SPIE, 2005, 5729, 30 doi: 10.1117/12.590880
[9]
Jackson J C, Phelan D, Morrison A P, et al. Toward integrated single-photon-counting microarrays. Opt Eng, 2002, 42(1), 112 doi: 10.1117/1.1524608
[10]
Isoshima T, Isojima Y, Hakomori K, et al. Ultrahigh sensitivity single-photon detector using a Si avalanche photodiode for the measurement of ultraweak biochemiluminescence. Rev Sci Instrum, 1995, 66(4), 2922 doi: 10.1063/1.1145578
[11]
Munoz E, Monroy E, Pau J L, et al. III nitrides and UV detection. J Phys-Condens Mat, 2001, 13(32), 7115 doi: 10.1088/0953-8984/13/32/316
[12]
Pau J L, Mcclintock R, Minder K, et al. Geiger-mode operation of back-illuminated GaN avalanche photodiodes. Appl Phys Lett, 2007, 91(4), 41104 doi: 10.1063/1.2759980
[13]
Roschke M, Schwierz F. Electron mobility models for 4H, 6H, and 3C SiC. IEEE Trans Electron Devices, 2001, 48(7), 1442 doi: 10.1109/16.930664
[14]
Pearton S J, Zolper J C, Shul R J, et al. GaN: Processing, defects, and devices. J Appl Phys, 1999, 86(1), 1 doi: 10.1063/1.371145
[15]
Monroy E, Omn S F, Calle F. Wide-bandgap semiconductor ultraviolet photodetectors. Semicond Sci Tech, 2003, 18(4), R33 doi: 10.1088/0268-1242/18/4/201
[16]
Powell A R, Rowland L B. SiC materials-progress, status, and potential roadblocks. Proc IEEE, 2002, 90(6), 942 doi: 10.1109/JPROC.2002.1021560
[17]
Yan F, Luo Y, Zhao J H, et al. 4H-SiC visible bling UV avalanche photodiode. Electron Lett, 1999, 35(11), 929 doi: 10.1049/el:19990641
[18]
Xin X, Yan F, Yan F, et al. Demonstration of 4H-SiC UV single photon counting avalanche photodiode. Electron Lett, 2005, 41(4), 212 doi: 10.1049/el:20057320
[19]
Beck A L, Karve G, Wang S, et al. Geiger mode operation of ultraviolet 4H-SiC avalanche photodiodes. IEEE Photon Technol Lett, 2005, 17(7), 1507 doi: 10.1109/LPT.2005.848399
[20]
Shaw G A, Siegel A M, Model J, et al. Deep UV photon-counting detectors and applications. Proc SPIE, 2009, 7320(73200J), 1 doi: 10.1117/12.820825
[21]
Beck A L, Guo X, Liu H, et al. Low dark count rate 4H-SiC Geiger mode avalanche photodiodes operated under gated quenching at 325 nm. Proc SPIE, 2006, 6372, 63720O-1 doi: 10.1117/12.685417
[22]
Li L, Zhou D, Lu H, et al. 4H-SiC avalanche photodiode linear array operating in Geiger Mode. IEEE Photonics J, 2017, 9(5), 6804207 doi: 10.1109/JPHOT.2017.2750686
[23]
Restelli A, Rech I, Maccagnani P, et al. Monolithic silicon matrix detector with 50 μm photon counting pixels. J Mod Optic, 2007, 54(2/3), 213 doi: 10.1080/09500340600790121
[24]
Cicek E, Vashaei Z, Mcclintock R, et al. Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates. Appl Phys Lett, 2010, 96(26), 261107 doi: 10.1063/1.3457783
[25]
Bai X, Liu H, Mcintosh D C, et al. High-detectivity and high-single-photon-detection-efficiency 4H-SiC avalanche photodiodes. IEEE J Quantum Elect, 2009, 45(3), 300 doi: 10.1109/JQE.2009.2013093
[26]
Vert A, Soloviev S, Sandvik P. SiC avalanche photodiodes and photomultipliers for ultraviolet and solar-blind light detection. Phys Status Solidi A, 2009, 206(10), 2468 doi: 10.1002/pssa.200925118
[27]
Bai X, Mcintosh D, Liu H, et al. Ultraviolet single photon detection with Geiger-mode 4H-SiC avalanche photodiodes. IEEE Photon Technol Lett, 2007, 19(22), 1822 doi: 10.1109/LPT.2007.906830
[28]
Li L, Zhou D, Liu F, et al. High fill-factor 4H-SiC avalanche photodiodes with partial trench isolation. IEEE Photon Technol Lett, 2016, 28(22), 2526 doi: 10.1109/LPT.2016.2602320
[29]
Zhou D, Liu F, Lu H, et al. High-temperature single photon detection performance of 4H-SiC avalanche photodiodes. IEEE Photon Technol Lett, 2014, 26(11), 1136 doi: 10.1109/LPT.2014.2316793
[30]
Kimoto T. Material science and device physics in SiC technology for high-voltage power devices. Jpn J Appl Phys, 2015, 54, 040103 doi: 10.7567/JJAP.54.040103
[31]
Katsuno T, Watanabe Y, Fujiwara H, et al. Analysis of surface morphology at leakage current sources of 4H-SiC Schottky barrier diodes. Appl Phys Lett, 2011, 98(22), 222111 doi: 10.1063/1.3597413
[32]
Usami S, Ando Y, Tanaka A, et al. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate. Appl Phys Lett, 2018, 112(18), 182106 doi: 10.1063/1.5024704
[33]
Yang Y, Chen Z. Identification of SiC polytypes by etched Si-face morphology. Mater Sci Semicond Proc, 2009, 12(3), 113 doi: 10.1016/j.mssp.2009.08.004
[34]
Wahab Q, Ellison A, Henry A, et al. Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H-SiC Schottky diodes. Appl Phys Lett, 2000, 76(19), 2725 doi: 10.1063/1.126456
[35]
Chen B, Matsuhata H, Sekiguchi T, et al. Surface defects and accompanying imperfections in 4H-SiC: Optical, structural and electrical characterization. Acta Mater, 2012, 60(1), 51 doi: 10.1016/j.actamat.2011.09.010
[36]
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    Received: 23 February 2019 Revised: 10 July 2019 Online: Accepted Manuscript: 12 September 2019Uncorrected proof: 18 September 2019Published: 09 December 2019

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      Linlin Su, Dong Zhou, Hai Lu, Rong Zhang, Youdou Zheng. Recent progress of SiC UV single photon counting avalanche photodiodes[J]. Journal of Semiconductors, 2019, 40(12): 121802. doi: 10.1088/1674-4926/40/12/121802 L L Su, D Zhou, H Lu, R Zhang, Y D Zheng, Recent progress of SiC UV single photon counting avalanche photodiodes[J]. J. Semicond., 2019, 40(12): 121802. doi: 10.1088/1674-4926/40/12/121802.Export: BibTex EndNote
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      Linlin Su, Dong Zhou, Hai Lu, Rong Zhang, Youdou Zheng. Recent progress of SiC UV single photon counting avalanche photodiodes[J]. Journal of Semiconductors, 2019, 40(12): 121802. doi: 10.1088/1674-4926/40/12/121802

      L L Su, D Zhou, H Lu, R Zhang, Y D Zheng, Recent progress of SiC UV single photon counting avalanche photodiodes[J]. J. Semicond., 2019, 40(12): 121802. doi: 10.1088/1674-4926/40/12/121802.
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      Recent progress of SiC UV single photon counting avalanche photodiodes

      doi: 10.1088/1674-4926/40/12/121802
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      • Corresponding author: Hai Lu, hailu@nju.edu.cn
      • Received Date: 2019-02-23
      • Revised Date: 2019-07-10
      • Published Date: 2019-12-01

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