Controlling magnetism in 2D CrI<sub>3</sub> by electrostatic doping

Zheng  Han

doi:10.1088/1674-4926/40/8/080204

Article Navigation > Journal of Semiconductors > 2019 > 40(8): 080204

Zheng Han. Controlling magnetism in 2D CrI3 by electrostatic doping[J]. Journal of Semiconductors, 2019, 40(8): 080204. doi: 10.1088/1674-4926/40/8/080204 ****Z Han. Controlling magnetism in 2D CrI3 by electrostatic doping[J]. J. Semicond., 2019, 40(8): 080204. doi: 10.1088/1674-4926/40/8/080204.

Citation:

Zheng Han. Controlling magnetism in 2D CrI₃ by electrostatic doping[J]. Journal of Semiconductors, 2019, 40(8): 080204. doi: 10.1088/1674-4926/40/8/080204 ****

Z Han. Controlling magnetism in 2D CrI3 by electrostatic doping[J]. J. Semicond., 2019, 40(8): 080204. doi: 10.1088/1674-4926/40/8/080204.

Citation:

Zheng Han. Controlling magnetism in 2D CrI₃ by electrostatic doping[J]. Journal of Semiconductors, 2019, 40(8): 080204. doi: 10.1088/1674-4926/40/8/080204 ****

Z Han. Controlling magnetism in 2D CrI3 by electrostatic doping[J]. J. Semicond., 2019, 40(8): 080204. doi: 10.1088/1674-4926/40/8/080204.

PDF( 1066 KB)