Fig. 1.
(Color online) The schematic structure of the GaN-based blue LD chip. The ridge waveguide structure is 30 × 1200 μm2.
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| Citation: |
Feng Liang, Degang Zhao, Zongshun Liu, Ping Chen, Jing Yang, Lihong Duan, Yongsheng Shi, Hai Wang. GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature[J]. Journal of Semiconductors, 2021, 42(11): 112801. doi: 10.1088/1674-4926/42/11/112801
F Liang, D G Zhao, Z S Liu, P Chen, J Yang, L H Duan, Y S Shi, H Wang, GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature[J]. J. Semicond., 2021, 42(11): 112801. doi: 10.1088/1674-4926/42/11/112801.
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GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature
doi: 10.1088/1674-4926/42/11/112801
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Abstract
In this work, we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode (LD), and its stimulated emission wavelength is around 442 nm. The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition (MOCVD), and the width and length of the ridge waveguide structure are 30 and 1200 μm, respectively. The threshold current is about 400 mA, and corresponding threshold current density is 1.1 kA/cm2.-
Keywords:
- GaN,
- blue laser diode,
- high power
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References
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