J. Semicond. > 2021, Volume 42 > Issue 4 > 041307, doi: 10.1088/1674-4926/42/4/041307
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REVIEWS

Latest advances in high-performance light sources and optical amplifiers on silicon

Songtao Liu1, and Akhilesh Khope2

+ Author Affiliations

 Corresponding author: Songtao Liu, stliu.photonics@gmail.com, stliu7963@gmail.com

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Abstract: Efficient light generation and amplification has long been missing on the silicon platform due to its well-known indirect bandgap nature. Driven by the size, weight, power and cost (SWaP-C) requirements, the desire to fully realize integrated silicon electronic and photonic integrated circuits has greatly pushed the effort of realizing high performance on-chip lasers and amplifiers moving forward. Several approaches have been proposed and demonstrated to address this issue. In this paper, a brief overview of recent progress of the high-performance lasers and amplifiers on Si based on different technology is presented. Representative device demonstrations, including ultra-narrow linewidth III–V/Si lasers, fully integrated III–V/Si/Si3N4 lasers, high-channel count mode locked quantum dot (QD) lasers, and high gain QD amplifiers will be covered.

Key words: III–V/Si photonic integrated circuits, semiconductor lasers, semiconductor amplifier, quantum dots



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Fig. 1.  (Color online) (a) Evolution of photonic integration in terms of the number of devices in a single PIC. Silicon photonic integration (red circle) represents the “passive” integration without an on-chip laser solution; InP integration (blue squares) and heterogeneous silicon integration (green triangle) are solutions with on-chip lasers[6]. (b) Schematic of the heterogeneous platform commercialized by Intel[10].

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Fig. 2.  (Color online) High-Q heterogeneous laser device schematics (not to scale). (a) Two-dimensional cross-section of the heterogeneous platform, with superimposed optical transverse mode profile. (b) Perspective view of a high-Q heterogeneous laser. (c) Perspective view of the high-Q silicon resonator[27]. (d) Frequency noise spectral density for three high-Q heterogeneous lasers (with different spacer thickness) and control laser[30].

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Fig. 3.  (Color online) (a) High-Q widely tunable heterogeneous quad-ring tunable laser device schematics (not to scale). (b) Coarse tuning spectra showing the tuning range of 120 nm. (c) Frequency noise spectrum of the fabricated quad-ring mirror laser. A white noise level of 45 Hz2/Hz is drawn[24].

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Fig. 4.  (Color online) (a) III–V/Si/Si3N4 laser schematic diagram. (b) Si–Si3N4 taper as well as the simulated mode profile. (c) Single-mode optical spectrum with gain current of 160 mA. The inset shows measured normalized reflection spectra of the Si3N4 spiral grating[36].

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Fig. 5.  (Color online) (a) Schematic illustration of the typical epitaxial structure used for lasers and amplifiers including one period of the p-modulation doped active region and the III–V/Si buffer including defect filter layers and thermal cycle annealing (TCA) to reduce dislocation densities. (b) As-grown photoluminescence spectra for quantum dot lasers on GaAs and Si substrates[47].

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Fig. 6.  (Color online) (a) Schematic diagram of the 20 GHz quantum dot mode-locked laser on silicon (not to scale). (b) Optical spectrum and corresponding optical linewidth of each mode within 10 dB. (c) Relative intensity noise of the whole O-band spectrum and certain filtered individual wavelength channels. (d) BER performance of the PAM-4 signal with different comb lines[60].

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Fig. 7.  (Color online) Si-based QD-SOA (a) on-chip gain (TE polarization) mapping as a function of on-chip input power and wavelength at 20 °C. (b) On-chip small signal gain as a function of wavelength. (c) On-chip output power as a function of on-chip input power. (d) Wall-plug efficiency as a function of on-chip input power[59]. (e) Bit error rate (BER) against the received optical power for the optical receiver (PD+TIA) with and without QD-SOA under 20 °C, eye diagrams of the receiver with and without QD-SOA are shown in the insets[85].

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[6]
Komljenovic T, Huang D N, Pintus P, et al. Photonic integrated circuits using heterogeneous integration on silicon. Proc IEEE, 2018, 106, 2246 doi: 10.1109/JPROC.2018.2864668
[7]
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[8]
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[10]
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[11]
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[12]
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[13]
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[15]
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[16]
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[18]
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[19]
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[20]
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    Received: 05 November 2020 Revised: 07 December 2020 Online: Accepted Manuscript: 01 February 2021Uncorrected proof: 07 February 2021Published: 12 April 2021

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      Article Navigation >  Journal of Semiconductors  > 2021  >  42(4): 041307
      Songtao Liu, Akhilesh Khope. Latest advances in high-performance light sources and optical amplifiers on silicon[J]. Journal of Semiconductors, 2021, 42(4): 041307. doi: 10.1088/1674-4926/42/4/041307 S T Liu, A Khope, Latest advances in high-performance light sources and optical amplifiers on silicon[J]. J. Semicond., 2021, 42(4): 041307. doi: 10.1088/1674-4926/42/4/041307.Export: BibTex EndNote
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      Songtao Liu, Akhilesh Khope. Latest advances in high-performance light sources and optical amplifiers on silicon[J]. Journal of Semiconductors, 2021, 42(4): 041307. doi: 10.1088/1674-4926/42/4/041307

      S T Liu, A Khope, Latest advances in high-performance light sources and optical amplifiers on silicon[J]. J. Semicond., 2021, 42(4): 041307. doi: 10.1088/1674-4926/42/4/041307.
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      Latest advances in high-performance light sources and optical amplifiers on silicon

      doi: 10.1088/1674-4926/42/4/041307
      • 1.

        Ayar Labs, 3351 Olcott St, Santa Clara, CA 95054, USA

      • 2.

        Microsoft Corporation, One Microsoft Way, Redmond, Washington, 98052, USA

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      • Author Bio:

        Songtao Liu received his Ph.D. degree in microelectronics and solid state electronics from the University of Chinese Academy of Sciences, Beijing, China, 2017. His research interests are in the field of III–V/silicon photonic integrated circuits, semiconductor lasers, semiconductor physics, optical interconnects, microwave photonics, etc. He is now with Ayar Labs, USA

        Akhilesh Khope received his Ph.D. degree in 2019 from UC Santa Barbara, CA, USA, under Prof John Bowers and Prof Adel Saleh in optical switches for data center networks. His research interests are in optical networks, photonic integrated switches and AI. He is now with Microsoft, USA

      • Corresponding author: stliu.photonics@gmail.com, stliu7963@gmail.com
      • Received Date: 2020-11-05
      • Revised Date: 2020-12-07
      • Published Date: 2021-04-10

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