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Super high maximum on-state currents in 2D transistors

Xiaotian Sun1, X, , Qiuhui Li3, X, Ruge Quhe2, , Yangyang Wang4 and Jing Lu3, 5, 6, 7, 8,

+ Author Affiliations

 Corresponding author: Xiaotian Sun, xtsun2013@163.com; Ruge Quhe, quheruge@bupt.edu.cn; Jing Lu, jinglu@pku.edu.cn

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[1]
Liu Y, Duan X D, Shin H J, et al. Promises and prospects of two-dimensional transistors. Nature, 2021, 591, 43 doi: 10.1038/s41586-021-03339-z
[2]
Li M Y, Su S K, Wong H S P, et al. How 2D semiconductors could extend Moore's law. Nature, 2019, 567, 169 doi: 10.1038/d41586-019-00793-8
[3]
Wang Y Y, Liu S Q, Li Q H, et al. Schottky barrier heights in two-dimensional field-effect transistors: From theory to experiment. Rep Prog Phys, 2021, 84, 056501 doi: 10.1088/1361-6633/abf1d4
[4]
Quhe R G, Xu L, Liu S Q, et al. Sub-10 nm two-dimensional transistors: Theory and experiment. Phys Rep, 2021, 938, 1 doi: 10.1016/j.physrep.2021.07.006
[5]
Shen P C, Su C, Lin Y X, et al. Ultralow contact resistance between semimetal and monolayer semiconductors. Nature, 2021, 593, 211 doi: 10.1038/s41586-021-03472-9
[6]
Liu L, Li T T, Ma L, et al. Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire. Nature, 2022, 605, 69 doi: 10.1038/s41586-022-04523-5
[7]
Ni Z Y, Ye M, Ma J H, et al. Performance upper limit of sub-10 nm monolayer MoS2 transistors. Adv Electron Mater, 2016, 2, 1600191 doi: 10.1002/aelm.201600191
[8]
Wu R X, Tao Q Y, Li J, et al. Bilayer tungsten diselenide transistors with on-state currents exceeding 1.5 milliamperes per micrometre. Nat Electron, 2022, 5, 497 doi: 10.1038/s41928-022-00800-3
[9]
Sun X T, Xu L, Zhang Y, et al. Performance limit of monolayer WSe2 transistors; significantly outperform their MoS2 counterpart. ACS Appl Mater Interfaces, 2020, 12, 20633 doi: 10.1021/acsami.0c01750
[10]
Qiu C G, Zhang Z Y, Xiao M M, et al. Scaling carbon nanotube complementary transistors to 5-nm gate lengths. Science, 2017, 355, 271 doi: 10.1126/science.aaj1628
[11]
The International Technology Roadmap for Semiconductors (ITRS). Online available, https://irds.ieee.org/editions/2021
[12]
The International Roadmap for Devices and Systems (IRDS). Online available: https://ieeexplore.ieee.org/abstract/document/7046976
[13]
Natarajan S, Agostinelli M, Akbar S, et al. A 14nm logic technology featuring 2nd-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm2 SRAM cell size. 2014 IEEE International Electron Devices Meeting, 2014, 3.7.1 doi: 10.1109/IEDM.2014.7046976
[14]
Zhang Y C, Yu J, Zhu R X, et al. A single-crystalline native dielectric for two-dimensional semiconductors with an equivalent oxide thickness below 0.5 nm. Nat Electron, 2022, 5, 643 doi: 10.1038/s41928-022-00824-9
Fig. 1.  (Color online) Benchmarking sub-100-nm bilayer WSe2 transistors (red ball) against the (a) ${{I}}_{\text{on}}^{\text{max}}$ for 2D semiconductor transistors (b-P, b-As, b-AsP, MoS2, MoS2-0.7 nm, WSe2-0.7 nm, WS2, WS2-0.7 nm, MoTe2, GeAs, InSe, SnSe, ReS2, PtSe2, ZrSe2, HfSe2) and Ion of 2021 silicon transistor (black ball) reported in ITRS, and (b) the ${{R}}_{\text{on}}^{\text{m}\text{in}}$ (lowest on-state resistance) with those reported in the literature[8]. Reproduced with permission from Springer Nature, copyright 2022.

[1]
Liu Y, Duan X D, Shin H J, et al. Promises and prospects of two-dimensional transistors. Nature, 2021, 591, 43 doi: 10.1038/s41586-021-03339-z
[2]
Li M Y, Su S K, Wong H S P, et al. How 2D semiconductors could extend Moore's law. Nature, 2019, 567, 169 doi: 10.1038/d41586-019-00793-8
[3]
Wang Y Y, Liu S Q, Li Q H, et al. Schottky barrier heights in two-dimensional field-effect transistors: From theory to experiment. Rep Prog Phys, 2021, 84, 056501 doi: 10.1088/1361-6633/abf1d4
[4]
Quhe R G, Xu L, Liu S Q, et al. Sub-10 nm two-dimensional transistors: Theory and experiment. Phys Rep, 2021, 938, 1 doi: 10.1016/j.physrep.2021.07.006
[5]
Shen P C, Su C, Lin Y X, et al. Ultralow contact resistance between semimetal and monolayer semiconductors. Nature, 2021, 593, 211 doi: 10.1038/s41586-021-03472-9
[6]
Liu L, Li T T, Ma L, et al. Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire. Nature, 2022, 605, 69 doi: 10.1038/s41586-022-04523-5
[7]
Ni Z Y, Ye M, Ma J H, et al. Performance upper limit of sub-10 nm monolayer MoS2 transistors. Adv Electron Mater, 2016, 2, 1600191 doi: 10.1002/aelm.201600191
[8]
Wu R X, Tao Q Y, Li J, et al. Bilayer tungsten diselenide transistors with on-state currents exceeding 1.5 milliamperes per micrometre. Nat Electron, 2022, 5, 497 doi: 10.1038/s41928-022-00800-3
[9]
Sun X T, Xu L, Zhang Y, et al. Performance limit of monolayer WSe2 transistors; significantly outperform their MoS2 counterpart. ACS Appl Mater Interfaces, 2020, 12, 20633 doi: 10.1021/acsami.0c01750
[10]
Qiu C G, Zhang Z Y, Xiao M M, et al. Scaling carbon nanotube complementary transistors to 5-nm gate lengths. Science, 2017, 355, 271 doi: 10.1126/science.aaj1628
[11]
The International Technology Roadmap for Semiconductors (ITRS). Online available, https://irds.ieee.org/editions/2021
[12]
The International Roadmap for Devices and Systems (IRDS). Online available: https://ieeexplore.ieee.org/abstract/document/7046976
[13]
Natarajan S, Agostinelli M, Akbar S, et al. A 14nm logic technology featuring 2nd-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm2 SRAM cell size. 2014 IEEE International Electron Devices Meeting, 2014, 3.7.1 doi: 10.1109/IEDM.2014.7046976
[14]
Zhang Y C, Yu J, Zhu R X, et al. A single-crystalline native dielectric for two-dimensional semiconductors with an equivalent oxide thickness below 0.5 nm. Nat Electron, 2022, 5, 643 doi: 10.1038/s41928-022-00824-9
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    Received: 31 October 2022 Revised: Online: Accepted Manuscript: 04 November 2022Uncorrected proof: 04 November 2022Published: 02 December 2022

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      Xiaotian Sun, Qiuhui Li, Ruge Quhe, Yangyang Wang, Jing Lu. Super high maximum on-state currents in 2D transistors[J]. Journal of Semiconductors, 2022, 43(12): 120401. doi: 10.1088/1674-4926/43/12/120401 X T Sun, Q H Li, R G Quhe, Y Y Wang, J Lu. Super high maximum on-state currents in 2D transistors[J]. J. Semicond, 2022, 43(12): 120401. doi: 10.1088/1674-4926/43/12/120401Export: BibTex EndNote
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      Xiaotian Sun, Qiuhui Li, Ruge Quhe, Yangyang Wang, Jing Lu. Super high maximum on-state currents in 2D transistors[J]. Journal of Semiconductors, 2022, 43(12): 120401. doi: 10.1088/1674-4926/43/12/120401

      X T Sun, Q H Li, R G Quhe, Y Y Wang, J Lu. Super high maximum on-state currents in 2D transistors[J]. J. Semicond, 2022, 43(12): 120401. doi: 10.1088/1674-4926/43/12/120401
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      Super high maximum on-state currents in 2D transistors

      doi: 10.1088/1674-4926/43/12/120401
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      • Author Bio:

        Xiaotian Sun is an Associate Professor at Luoyang Normal University. She received her Ph.D. degree in Material Science and Engineering at Soochow University. Her research interest focuses on 2D materials devices

        Qiuhui Li is a Ph.D. candidate at the Department of Physics, Peking University. She received her MS degree at the Department of Physics from the Beijing University of Posts and Telecommunications in 2019. Her research interests mainly focus on the electronic and transport properties of low-dimensional materials

        Ruge Quhe got her Ph.D. from Peking University. She is currently an Associate Professor with the School of Science, Beijing University of Posts and Telecommunications. Her research focuses on low-dimensional materials and electronics

        Yangyang Wang is an Associate Researcher at Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing. She received her Ph.D. degree in condensed matter physics from the Department of Physics, at Peking University, in 2016. She has been focusing on the research of electronic, optical, and transport properties of low-dimensional materials and their potential electronic and optoelectronic application

        Jing Lu is a Professor at the Department of Physics, Peking University. He was the ‘Hanjiang Scholars’ Project Distinguished Professor at Shaanxi University of Science and Technology, China. He is focused on exploring the properties of the two-dimensional (2D) semiconductor–metal interfaces, 2D semiconductors MOSFETs, and 2D materials optoelectronic devices by using the first-principles calculation and quantum transport simulations

      • Corresponding author: xtsun2013@163.comquheruge@bupt.edu.cnjinglu@pku.edu.cn
      • Received Date: 2022-10-31
        Available Online: 2022-11-04

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