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Research on eigenstate current control technology of Flash-based FPGA

Yueer Shan1, Zhengzhou Cao1, and Guozhu Liu2

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 Corresponding author: Zhengzhou Cao, caozhengzhou@163.com

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Abstract: To solve the Flash-based FPGA in the manufacturing process, the ion implantation process will bring electrons into the floating gate of the P-channel Flash cell so that the Flash switch is in a weak conduction state, resulting in the Flash-based FPGA eigenstate current problem. In this paper, the mechanism of its generation is analyzed, and four methods are used including ultraviolet light erasing, high-temperature baking, X-ray irradiation, and circuit logic control. A comparison of these four methods can identify the circuit design by using circuit logic to control the path of the power supply that is the most suitable and reliable method to solve the Flash-based FPGA eigenstate current problem. By this method, the power-on current of 3.5 million Flash-based FPGA can be reduced to less than 0.3 A, and the chip can start normally. The function and performance of the chip can then be further tested and evaluated, which is one of the key technologies for developing Flash-based FPGA.

Key words: Flash-based FPGAthreshold voltageeigenstate current



[1]
Speers T, Wang J J, Cronquist B, et al. 0.25 µm FLASH memory based FPGA for space applications. Actel Corporation, 2002
[2]
Rezgui S, Wang J J, Sun Y, et al. New reprogrammable and non-volatile radiation tolerant FPGA: RTA3P. 2008 IEEE Aerospace Conference, 2008, 1 doi: 10.1109/AERO.2008.4526472
[3]
Actel Company. ProASIC3 flash family FPGAs[J/OL].
[4]
Song S D, Liu G Z, Zhang H L, et al. Reliability evaluation on sense-switch p-channel flash. J Semicond, 2021, 42, 084101 doi: 10.1088/1674-4926/42/8/084101
[5]
Tao K. Integration and optimization of advanced split gate flash memory device integrated manufacturing. Shanghai: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 2006
[6]
Zhang X D, Huang J H, Zhuang M, et al. Wave-particle-mixedness complementarity. arXiv: 1705.10462, 2017
[7]
Huang Y Y, Establishing the Planck’s radiation law. Guangxi Phys, 2011, 32, 32 (in Chinese)
[8]
Li H, Zhao Y S. The corner stone of quantum physics. Physics, 2001, 30, 724 (in Chinese)
[9]
Xu G Z, Yang C R. Work and characteristics of an EPROM memory unit for ultraviolet erasure of information. Commun Electron, 1980, 2, 113
[10]
Zhu M. Research on UV erasing performance of non-volatile storage products. Shanghai: Shanghai Jiao Tong University, 2015 (in Chinese)
[11]
Sze S M. Physics and technology of semiconductor devices. Suzhou: Soochow University Press, 2003, 180
[12]
Xia Z L, Kim D S, Jeong N, et al. Comprehensive modeling of NAND flash memory reliability: Endurance and data retention. 2012 IEEE International Reliability Physics Symposium, 2012, 51 doi: 10.1109/IRPS.2012.6241922
[13]
Wu K, Pan C S, Shaw J J, et al. A model for EPROM intrinsic charge loss through oxide-nitride-oxide (ONO) interpoly dielectric. 28th Annual Proceedings on Reliability Physics Symposium, 1990, 145 doi: 10.1109/RELPHY.1990.66077
[14]
Zhou J, Yao J, Song Y. Storage life evaluation method based on segmented nonlinear Arrhenius model. J Beijing Univ Aeronaut Astronaut, 2015, 41, 744 doi: 10.13700/j.bh.1001-5965.2014.0319
[15]
Mu W B, Chen P X. Monte-Carlo calculation of X-ray dose enhancement factor nearby high z metal connected interface. Acta Phys Sin, 2001, 50, 189 doi: 10.7498/aps.50.189
[16]
Dozier C M, Brown D B, Freitag R K, et al. Use of the subthreshold behavior to compare X-ray and Co-60 radiation-induced defects in MOS transistors. IEEE Trans Nucl Sci, 1986, 33, 1324 doi: 10.1109/TNS.1986.4334600
[17]
Shaneyfelt M R, Fleetwood D M, Schwank J R, et al. Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices. IEEE Trans Nucl Sci, 1991, 38, 1187 doi: 10.1109/23.124092
[18]
Dozier C M, Brown D B, Throckmorton J L, et al. Defect production in SiO2 by X-ray and Co-60 radiations. IEEE Trans Nucl Sci, 1985, 32, 4363 doi: 10.1109/TNS.1985.4334125
[19]
Chen P X, Zhou K M. Dose-enhancing effects of X-ray. Physics, 1997, 12, 725
[20]
Liu G Z. Research on core configuration unit design and process integration technology of radiation-resistant FLASH-BASED FPGA. Doctoral Dissertation, Southeast University, 2020, 57
[21]
Liu G Z, Hong G S, Zhao W B, et al. Structure and preparation method of radiation-resistant sense-switch pFLASH switch unit. China Invention Patent, CN201710478345.1, 2017
[22]
Liu G Z, Yu Z G, Xiao Z Q, et al. Reliable and radiation-hardened push-pull pFlash cell for reconfigured FPGAs. IEEE Trans Device Mater Relib, 2021, 21, 87 doi: 10.1109/TDMR.2021.3055210
[23]
Liu G Z, Li B, Xiao Z Q, et al. The TID characteristics of a radiation hardened sense-switch pFLASH cell. IEEE Trans Device Mater Reliab, 2020, 20, 358 doi: 10.1109/TDMR.2020.2975825
[24]
Liu G Z, Li B, Wei J H, et al. A radiation-hardened sense-switch pFLASH cell for FPGA. Microelectron Reliab, 2019, 103, 113514 doi: 10.1016/j.microrel.2019.113514
[25]
Hu Q C, Wu J D, Wan L X. A level conversion unit with low power consumption, high speed and wide level range. Electron Packag, 2022, 22, 030305 doi: 10.16257/j.cnki.1681-1070.2022.0308
Fig. 1.  (Color online) Structure of Flash switch unit.

Fig. 2.  (Color online) N-channel Flash. (a) Program(FN). (b) Threshold voltage distribution and adjust.

Fig. 3.  (Color online) P-channel Flash. (a) Program(BTBTIHE). (b) Threshold voltage distribution and adjust.

Fig. 4.  (Color online) Signal selector MUX use P-channel Flash.

Fig. 5.  (Color online) Measured eigenstate threshold voltage of the Flash switch.

Fig. 6.  (Color online) Energy band diagram of the Flash cell.

Fig. 7.  (Color online) Spectrum of ultraviolet light.

Fig. 8.  (Color online) Ultraviolet light erasing.

Fig. 9.  (Color online) Metal wiring of Flash-based FPGA.

Fig. 10.  (Color online) Relationship between threshold voltage drift and baking time.

Fig. 11.  (Color online) Energy band diagram of floating gate structure under X-ray radiation ionization. (a) Programming state. (b) Erasing state.

Fig. 12.  (Color online) Two logic control schemes for the first power-on. (a) Control the Flash gate. (b) Control the GND of core logic.

Fig. 13.  (Color online) Voltage control of Flash cell gate.

Fig. 14.  (Color online) GND to L_GND channel.

Fig. 15.  (Color online) Control logic of L_GND channel switch.

Fig. 16.  (Color online) Competition between voltage and current during power-on.

Fig. 17.  Flash cell PCM.

Fig. 18.  (Color online) A 3.5 million Flash-based FPGA.

Fig. 19.  (Color online) UVC irradiation test. (a) Flash cell PCM. (b) Flash-based FPGA.

Fig. 20.  (Color online) X-ray irradiation test. (a) Flash cell PCM. (b) Flash-based FPGA.

Fig. 21.  (Color online) High temperature baking test. (a) Flash cell PCM. (b) Flash-based FPGA.

Fig. 22.  (Color online) Power-on waveform. (a) Circuit without path control of power supply. (b) Circuit with path control of power supply.

Fig. 23.  (Color online) Power-on current of the circuit with path control of power supply at –55, 25 and 125 °C.

Table 1.   Comparison of four methods.

MethodLeakage current of
Flash cell
Power-on current of FPGATime con-sumptionCost
UVC irradiationGoodPoorMediumGood
High temperature bakingPoorPoorPoorGood
X-ray irradiationGoodPoorMediumMedium
Circuit logic controlGoodGoodMedium
DownLoad: CSV
[1]
Speers T, Wang J J, Cronquist B, et al. 0.25 µm FLASH memory based FPGA for space applications. Actel Corporation, 2002
[2]
Rezgui S, Wang J J, Sun Y, et al. New reprogrammable and non-volatile radiation tolerant FPGA: RTA3P. 2008 IEEE Aerospace Conference, 2008, 1 doi: 10.1109/AERO.2008.4526472
[3]
Actel Company. ProASIC3 flash family FPGAs[J/OL].
[4]
Song S D, Liu G Z, Zhang H L, et al. Reliability evaluation on sense-switch p-channel flash. J Semicond, 2021, 42, 084101 doi: 10.1088/1674-4926/42/8/084101
[5]
Tao K. Integration and optimization of advanced split gate flash memory device integrated manufacturing. Shanghai: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 2006
[6]
Zhang X D, Huang J H, Zhuang M, et al. Wave-particle-mixedness complementarity. arXiv: 1705.10462, 2017
[7]
Huang Y Y, Establishing the Planck’s radiation law. Guangxi Phys, 2011, 32, 32 (in Chinese)
[8]
Li H, Zhao Y S. The corner stone of quantum physics. Physics, 2001, 30, 724 (in Chinese)
[9]
Xu G Z, Yang C R. Work and characteristics of an EPROM memory unit for ultraviolet erasure of information. Commun Electron, 1980, 2, 113
[10]
Zhu M. Research on UV erasing performance of non-volatile storage products. Shanghai: Shanghai Jiao Tong University, 2015 (in Chinese)
[11]
Sze S M. Physics and technology of semiconductor devices. Suzhou: Soochow University Press, 2003, 180
[12]
Xia Z L, Kim D S, Jeong N, et al. Comprehensive modeling of NAND flash memory reliability: Endurance and data retention. 2012 IEEE International Reliability Physics Symposium, 2012, 51 doi: 10.1109/IRPS.2012.6241922
[13]
Wu K, Pan C S, Shaw J J, et al. A model for EPROM intrinsic charge loss through oxide-nitride-oxide (ONO) interpoly dielectric. 28th Annual Proceedings on Reliability Physics Symposium, 1990, 145 doi: 10.1109/RELPHY.1990.66077
[14]
Zhou J, Yao J, Song Y. Storage life evaluation method based on segmented nonlinear Arrhenius model. J Beijing Univ Aeronaut Astronaut, 2015, 41, 744 doi: 10.13700/j.bh.1001-5965.2014.0319
[15]
Mu W B, Chen P X. Monte-Carlo calculation of X-ray dose enhancement factor nearby high z metal connected interface. Acta Phys Sin, 2001, 50, 189 doi: 10.7498/aps.50.189
[16]
Dozier C M, Brown D B, Freitag R K, et al. Use of the subthreshold behavior to compare X-ray and Co-60 radiation-induced defects in MOS transistors. IEEE Trans Nucl Sci, 1986, 33, 1324 doi: 10.1109/TNS.1986.4334600
[17]
Shaneyfelt M R, Fleetwood D M, Schwank J R, et al. Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices. IEEE Trans Nucl Sci, 1991, 38, 1187 doi: 10.1109/23.124092
[18]
Dozier C M, Brown D B, Throckmorton J L, et al. Defect production in SiO2 by X-ray and Co-60 radiations. IEEE Trans Nucl Sci, 1985, 32, 4363 doi: 10.1109/TNS.1985.4334125
[19]
Chen P X, Zhou K M. Dose-enhancing effects of X-ray. Physics, 1997, 12, 725
[20]
Liu G Z. Research on core configuration unit design and process integration technology of radiation-resistant FLASH-BASED FPGA. Doctoral Dissertation, Southeast University, 2020, 57
[21]
Liu G Z, Hong G S, Zhao W B, et al. Structure and preparation method of radiation-resistant sense-switch pFLASH switch unit. China Invention Patent, CN201710478345.1, 2017
[22]
Liu G Z, Yu Z G, Xiao Z Q, et al. Reliable and radiation-hardened push-pull pFlash cell for reconfigured FPGAs. IEEE Trans Device Mater Relib, 2021, 21, 87 doi: 10.1109/TDMR.2021.3055210
[23]
Liu G Z, Li B, Xiao Z Q, et al. The TID characteristics of a radiation hardened sense-switch pFLASH cell. IEEE Trans Device Mater Reliab, 2020, 20, 358 doi: 10.1109/TDMR.2020.2975825
[24]
Liu G Z, Li B, Wei J H, et al. A radiation-hardened sense-switch pFLASH cell for FPGA. Microelectron Reliab, 2019, 103, 113514 doi: 10.1016/j.microrel.2019.113514
[25]
Hu Q C, Wu J D, Wan L X. A level conversion unit with low power consumption, high speed and wide level range. Electron Packag, 2022, 22, 030305 doi: 10.16257/j.cnki.1681-1070.2022.0308
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    Received: 31 May 2022 Revised: 01 September 2022 Online: Accepted Manuscript: 17 October 2022Uncorrected proof: 20 October 2022Published: 02 December 2022

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      Yueer Shan, Zhengzhou Cao, Guozhu Liu. Research on eigenstate current control technology of Flash-based FPGA[J]. Journal of Semiconductors, 2022, 43(12): 122401. doi: 10.1088/1674-4926/43/12/122401 Y E Shan, Z Z Cao, G Z Liu. Research on eigenstate current control technology of Flash-based FPGA[J]. J. Semicond, 2022, 43(12): 122401. doi: 10.1088/1674-4926/43/12/122401Export: BibTex EndNote
      Citation:
      Yueer Shan, Zhengzhou Cao, Guozhu Liu. Research on eigenstate current control technology of Flash-based FPGA[J]. Journal of Semiconductors, 2022, 43(12): 122401. doi: 10.1088/1674-4926/43/12/122401

      Y E Shan, Z Z Cao, G Z Liu. Research on eigenstate current control technology of Flash-based FPGA[J]. J. Semicond, 2022, 43(12): 122401. doi: 10.1088/1674-4926/43/12/122401
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      Research on eigenstate current control technology of Flash-based FPGA

      doi: 10.1088/1674-4926/43/12/122401
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      • Author Bio:

        Yueer Shan researcher. His research interests include independent architecture hundred-million-gates FPGA, Flash-based FPGA and FPGA configuration chip design

        Zhengzhou Cao BS degree, Senior Engineer. His research interests include SRAM based FPGA, Flash-based FPGA and FPGA configuration chip design

        Guozhu Liu Senior Engineer. His research interests include Flash device, MTM Anti-fuse device and processing in memory design

      • Corresponding author: caozhengzhou@163.com
      • Received Date: 2022-05-31
      • Revised Date: 2022-09-01
      • Available Online: 2022-10-17

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