J. Semicond. > 2022, Volume 43 > Issue 2 > 021801, doi: 10.1088/1674-4926/43/2/021801
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REVIEWS

Diamond semiconductor and elastic strain engineering

Chaoqun Dang1, Anliang Lu1, Heyi Wang1, Hongti Zhang2 and Yang Lu1, 3, 4,

+ Author Affiliations

 Corresponding author: Yang Lu, yanglu@cityu.edu.hk

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Abstract: Diamond, as an ultra-wide bandgap semiconductor, has become a promising candidate for next-generation microelectronics and optoelectronics due to its numerous advantages over conventional semiconductors, including ultrahigh carrier mobility and thermal conductivity, low thermal expansion coefficient, and ultra-high breakdown voltage, etc. Despite these extraordinary properties, diamond also faces various challenges before being practically used in the semiconductor industry. This review begins with a brief summary of previous efforts to model and construct diamond-based high-voltage switching diodes, high-power/high-frequency field-effect transistors, MEMS/NEMS, and devices operating at high temperatures. Following that, we will discuss recent developments to address scalable diamond device applications, emphasizing the synthesis of large-area, high-quality CVD diamond films and difficulties in diamond doping. Lastly, we show potential solutions to modulate diamond’s electronic properties by the “elastic strain engineering” strategy, which sheds light on the future development of diamond-based electronics, photonics and quantum systems.

Key words: diamond, optoelectronics, power electronics, nanomechanics, elastic strain engineering



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Fig. 1.  (Color online) Representative diamond devices. (a, b) A picture and schematic of a diamond SBD[16]. (c) Diamond SBD is placed in a metal/ceramic container with high-temperature turn-off capabilities[24]. (d) Switching characterization of a diamond vertical SBD at 50, 150, and 250 °C, respectively[24]. (e) Schematic cross-section along with the red dot in a top-view optical picture of a MOSFET[31]. S, D, and G represent the source, drain, and gate contacts, respectively. (f) Drain current (Id) versus drain voltage (Vds) of a diamond MOSFET at room temperature[31]. (g) Scanning electron micrograph (SEM) of diamond-on-insulator devices with multiple cantilevers[40]. (h) SEM image of a fabricated compact focusing grating coupler device[41]. (i) SEM image of a freestanding diamond resonator in a fabricated electro-optomechanical device[42].

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Fig. 2.  (Color online) Synthetic diamonds. (a) Microwave plasma-assisted CVD growth of SCD over 70 large 3.5 × 3.5 mm2 HPHT seed crystals[11, 106]. (b) A mosaic wafer (40 × 40 mm2) in which CVD growth connects diamond plate fragments horizontally[77]. (c) A 155-carat freestanding pristine SCD with a thickness of 1.6 ± 0.25 mm and diameter of 90 mm fabricated by heteroepitaxy on Ir/YSZ/Si(001) in a microwave plasma CVD[76]. (d) An amorphous carbon material AM-III showing the intrinsic semiconducting nature with a bandgap of 1.5–2.2 eV[104].

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Fig. 3.  (Color online) Elastic strain engineering of diamond. (a–c) Schematic of the "push-to-bend" deformation of the nanoscale diamond needle with maximum deformation just before fracture, corresponding FEM simulation reproducing the geometry of the bending and displaying the local elastic maximum principal strain[148]. (d) "Compress-to-bend" deformation test on a FIB-machined single-crystalline nanoscale diamond needle along with [100] direction to the maximum bending deformation just before fracture and corresponding FEM simulation replicating the crucial nanoneedle shape and distribution of maximum principal strain[151]. (e, f) Uniaxial tensile setup of the diamond bridge with loading-full-unloading deformation, corresponding FEM simulation reproducing the geometry of the diamond bridge illustrating the longitudinal distribution of elastic strain[152]. (g) Tensile deformation of a diamond array with multiple bridges reaching a maximum tensile strain of 6%[152]. (h) Diamond bandgap envelope expanding to the semiconductor area with decreased bandgap. The black and red dots respectively denote the upper- and lower-envelope functions. The right side shows an illustration of bandgap isosurfaces in the ε1ε2ε3 strain space[149]. (i) Detailed ε11–ε22 strain space showing an area of direct metal strains (brown) within the area of direct bandgap strains (blue) and an area of indirect metal strains (brown) within the nonzero indirect bandgap strains (white region with magenta symbols)[153]. (j) Three semiconducting, conducting, and superconducting stages of electronic bandgap evolution in progressively deformed diamond under (11$ {\overline 2} $)[111] compression-shear strain and strain dependence of critical temperature Tc for a selected range of Coulomb pseudopotential μ*[154].

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    Received: 21 August 2021 Revised: 16 September 2021 Online: Accepted Manuscript: 11 November 2021Uncorrected proof: 11 November 2021Published: 01 February 2022

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      Article Navigation >  Journal of Semiconductors  > 2022  >  43(2): 021801
      Chaoqun Dang, Anliang Lu, Heyi Wang, Hongti Zhang, Yang Lu. Diamond semiconductor and elastic strain engineering[J]. Journal of Semiconductors, 2022, 43(2): 021801. doi: 10.1088/1674-4926/43/2/021801 C Q Dang, A L Lu, H Y Wang, H T Zhang, Y Lu, Diamond semiconductor and elastic strain engineering[J]. J. Semicond., 2022, 43(2): 021801. doi: 10.1088/1674-4926/43/2/021801.Export: BibTex EndNote
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      Chaoqun Dang, Anliang Lu, Heyi Wang, Hongti Zhang, Yang Lu. Diamond semiconductor and elastic strain engineering[J]. Journal of Semiconductors, 2022, 43(2): 021801. doi: 10.1088/1674-4926/43/2/021801

      C Q Dang, A L Lu, H Y Wang, H T Zhang, Y Lu, Diamond semiconductor and elastic strain engineering[J]. J. Semicond., 2022, 43(2): 021801. doi: 10.1088/1674-4926/43/2/021801.
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      Diamond semiconductor and elastic strain engineering

      doi: 10.1088/1674-4926/43/2/021801
      • 1.

        Department of Mechanical Engineering, City University of Hong Kong, Hong Kong, China

      • 2.

        School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China

      • 3.

        Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, China

      • 4.

        Nano-Manufacturing Laboratory (NML), Shenzhen Research Institute of City University of Hong Kong, Shenzhen 518057, China

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      • Author Bio:

        Chaoqun Dang is currently a research assistant at the City University of Hong Kong (CityU) starting from November 2020. She obtained her BE degree from the Taiyuan University of Technology in 2014, MS degree from Shanghai University joint ME with Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences in 2017, and a PhD degree from CityU in 2021. Her research focuses on experimental nanomechanics of metallic and semiconductor materials

        Anliang Lu got his BE degree from Northeastern University and MS degree from Shanghai Jiao Tong University. Now he is a PhD student at CityU under the supervision of Prof. Yang Lu. His research focuses on nanomechanics and elastic strain engineering of wide-bandgap semiconductor materials

        Yang Lu is currently a Professor in the Department of Mechanical Engineering and Department of Materials Science and Engineering at CityU. He obtained his BS degree from Nanjing University and PhD degree from Rice University. Before joining CityU, he did postdoctoral research at MIT for about two years. His research focuses on micro/nanomechanics, in situ electron microscopy and elastic strain engineering of wide-bandgap semiconductors including diamond

      • Corresponding author: yanglu@cityu.edu.hk
      • Received Date: 2021-08-21
      • Revised Date: 2021-09-16
      • Published Date: 2022-02-10

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