A new 3-dB bandwidth record of Ge photodiode on Si

Zhi Liu; Chuanbo Li; Buwen Cheng

doi:10.1088/1674-4926/43/6/060202

J. Semicond. > 2022, Volume 43 > Issue 6 > 060202, doi: 10.1088/1674-4926/43/6/060202

RESEARCH HIGHLIGHTS

A new 3-dB bandwidth record of Ge photodiode on Si

Zhi Liu^{1, 2}, Chuanbo Li³ and Buwen Cheng^{1, 2,}

+ Author Affiliations

Corresponding author: Buwen Cheng, cbw@semi.ac.cn

References

[1]	Won R. Integrating silicon photonics. Nat Photonics, 2010, 4, 498 doi: 10.1038/nphoton.2010.189
[2]	Chen H, Verheyen P, de Heyn P, et al. –1 V bias 67 GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond. Opt Express, 2016, 24, 4622 doi: 10.1364/OE.24.004622
[3]	Lischke S, Knoll D, Mai C, et al. High bandwidth, high responsivity waveguide-coupled germanium p-i-n photodiode. Opt Express, 2015, 23, 27213 doi: 10.1364/OE.23.027213
[4]	Boeuf F, Fincato A, Maggi L, et al. A silicon photonics technology for 400 gbit/s applications. 2019 IEEE Int Electron Devices Meet, 2019, 33.1.1
[5]	Virot L, Benedikovic D, Szelag B, et al. Integrated waveguide PIN photodiodes exploiting lateral Si/Ge/Si heterojunction. Opt Express, 2017, 25, 19487 doi: 10.1364/OE.25.019487
[6]	Jutzi M, Berroth M, Wohl G, et al. Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth. IEEE Photonics Technol Lett, 2005, 17, 1510 doi: 10.1109/LPT.2005.848546
[7]	Reggiani L, Canali C, Nava F, et al. Hole drift velocity in germanium. Phys Rev B, 1977, 16, 2781 doi: 10.1103/PhysRevB.16.2781
[8]	Rouvalis E, Chtioui M, van Dijk F, et al. 170 GHz uni-traveling carrier photodiodes for InP-based photonic integrated circuits. Opt Express, 2012, 20, 20090 doi: 10.1364/OE.20.020090
[9]	Lischke S, Peczek A, Morgan J S, et al. Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz. Nat Photonics, 2021, 15, 925 doi: 10.1038/s41566-021-00893-w
[10]	Windhorn T H, Cook L W, Stillman G E. The electron velocity-field characteristic for n-In_0.53Ga_0.47As at 300 K. IEEE Electron Device Lett, 1982, 3, 18 doi: 10.1109/EDL.1982.25459
[11]	Li X L, Liu Z, Peng L Z, et al. High-performance germanium waveguide photodetectors on silicon. Chin Phys Lett, 2020, 37, 038503 doi: 10.1088/0256-307X/37/3/038503

Fig. 1. (Color online) Calculated 3-dB bandwidth of Ge p–i–n photodiode with various thickness and active area. Calculated transit-time-limited bandwidth is also shown for comparison.

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[1]	Won R. Integrating silicon photonics. Nat Photonics, 2010, 4, 498 doi: 10.1038/nphoton.2010.189
[2]	Chen H, Verheyen P, de Heyn P, et al. –1 V bias 67 GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond. Opt Express, 2016, 24, 4622 doi: 10.1364/OE.24.004622
[3]	Lischke S, Knoll D, Mai C, et al. High bandwidth, high responsivity waveguide-coupled germanium p-i-n photodiode. Opt Express, 2015, 23, 27213 doi: 10.1364/OE.23.027213
[4]	Boeuf F, Fincato A, Maggi L, et al. A silicon photonics technology for 400 gbit/s applications. 2019 IEEE Int Electron Devices Meet, 2019, 33.1.1
[5]	Virot L, Benedikovic D, Szelag B, et al. Integrated waveguide PIN photodiodes exploiting lateral Si/Ge/Si heterojunction. Opt Express, 2017, 25, 19487 doi: 10.1364/OE.25.019487
[6]	Jutzi M, Berroth M, Wohl G, et al. Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth. IEEE Photonics Technol Lett, 2005, 17, 1510 doi: 10.1109/LPT.2005.848546
[7]	Reggiani L, Canali C, Nava F, et al. Hole drift velocity in germanium. Phys Rev B, 1977, 16, 2781 doi: 10.1103/PhysRevB.16.2781
[8]	Rouvalis E, Chtioui M, van Dijk F, et al. 170 GHz uni-traveling carrier photodiodes for InP-based photonic integrated circuits. Opt Express, 2012, 20, 20090 doi: 10.1364/OE.20.020090
[9]	Lischke S, Peczek A, Morgan J S, et al. Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz. Nat Photonics, 2021, 15, 925 doi: 10.1038/s41566-021-00893-w
[10]	Windhorn T H, Cook L W, Stillman G E. The electron velocity-field characteristic for n-In_0.53Ga_0.47As at 300 K. IEEE Electron Device Lett, 1982, 3, 18 doi: 10.1109/EDL.1982.25459
[11]	Li X L, Liu Z, Peng L Z, et al. High-performance germanium waveguide photodetectors on silicon. Chin Phys Lett, 2020, 37, 038503 doi: 10.1088/0256-307X/37/3/038503