Fig. 1.
(Color online) (a) The process schematic diagram of the preparation of GaN nanorods. (b) The PL spectra of GaN before and after graphene transfer. (c) The Raman spectra of graphene grown on copper foil.
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Xuemin Zhang, Changling Yan, Jinghang Yang, Chao Pang, Yunzhen Yue, Chunhong Zeng, Baoshun Zhang. Vertical Schottky ultraviolet photodetector based on graphene and top–down fabricated GaN nanorod arrays[J]. Journal of Semiconductors, 2022, 43(6): 062804. doi: 10.1088/1674-4926/43/6/062804
X M Zhang, C L Yan, J H Yang, C Pang, Y Z Yue, C H Zeng, B S Zhang. Vertical Schottky ultraviolet photodetector based on graphene and top–down fabricated GaN nanorod arrays[J]. J. Semicond, 2022, 43(6): 062804. doi: 10.1088/1674-4926/43/6/062804
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Vertical Schottky ultraviolet photodetector based on graphene and top–down fabricated GaN nanorod arrays
doi: 10.1088/1674-4926/43/6/062804
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Abstract
GaN has been widely used in the fabrication of ultraviolet photodetectors because of its outstanding properties. In this paper, we report a graphene–GaN nanorod heterostructure photodetector with fast photoresponse in the UV range. GaN nanorods were fabricated by a combination mode of dry etching and wet etching. Furthermore, a graphene–GaN nanorod heterostructure ultraviolet detector was fabricated and its photoelectric properties were measured. The device exhibits a fast photoresponse in the UV range. The rising time and falling time of the transient response were 13 and 8 ms, respectively. A high photovoltaic responsivity up to 13.9 A/W and external quantum efficiency up to 479% were realized at the UV range. The specific detectivity D* = 1.44 × 1010 Jones was obtained at –1 V bias in ambient conditions. The spectral response was measured and the highest response was observed at the 360 nm band. -
References
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