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Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si3N4 dielectric layer

Tianjiang He1, 2, Suping Liu1, , Wei Li1, Cong Xiong1, Nan Lin1, 2, Li Zhong1, 2 and Xiaoyu Ma1, 2

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 Corresponding author: Suping Liu, spliu@semi.ac.cn

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Abstract: The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability. To improve the output power of 680 nm AlGaInP/GaInP quantum well red semiconductor lasers, Si–Si3N4 composited dielectric layers are used to induce its quantum wells to be intermixed at the cavity surface to make a non-absorption window. Si with a thickness of 100 nm and Si3N4 with a thickness of 100 nm were grown on the surface of the epitaxial wafer by magnetron sputtering and PECVD as diffusion source and driving source, respectively. Compared with traditional Si impurity induced quantum well intermixing, this paper realizes the blue shift of 54.8 nm in the nonabsorbent window region at a lower annealing temperature of 600 °C and annealing time of 10 min. Under this annealing condition, the wavelength of the gain luminescence region basically does not shift to short wavelength, and the surface morphology of the whole epitaxial wafer remains fine after annealing. The application of this process condition can reduce the difficulty of production and save cost, which provides an effective method for upcoming fabrication.

Key words: high power semiconductor laserrapid thermal annealingcomposited dielectric layerquantum well intermixingoptical catastrophic damagenonabsorbent window



[1]
Hu Y, Liang D, Mukherjee K, et al. III/V-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template. Light Sci Appl, 2019, 8(1), 93 doi: 10.1038/s41377-019-0202-6
[2]
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[3]
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[4]
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Tian W N, Xiong C, Wang X, et al. Impurity-free vacancy diffusion induces intermixing in GaInP/AlGaInP quantum wells using GaAs encapsulation. Chin J Lumin, 2018, 39(8), 5 doi: 10.3788/fgxb20183908.1095
[6]
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He T J, Jing H Q, Zhu L N, et al. Research on quantum well intermixing of 915 nm InGaAsP/GaAsP primary epitaxial wafers. Acta Opt Sinica, 2022, 42(1), 0114003
[8]
Deppe D G, Holonyak N. Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructures. J Appl Phys, 1988, 64(12), R93 doi: 10.1063/1.341981
[9]
Kaliski R W, Ito C R, McIntyre D G, et al. Influence of annealing and substrate orientation on metalorganic chemical vapor deposition GaAs on silicon heteroepitaxy. J Appl Phys, 1988, 64(3), 1196 doi: 10.1063/1.341884
[10]
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[11]
Peng H T. Improving the COD level of high-power semiconductor lasers using quantum well intermixing. Tianjin: Hebei University of Technology, 2007
[12]
Liu C C, Lin N, Xiong C, et al. Intermixing in InGaAs/AlGaAs quamtum well structures induced by the interdiffusion of Si impurities. Chin Opt, 2020, 13(1), 203 doi: 10.3788/co.20201301.0203
[13]
Zhou J T, Zhu H L, Cheng Y B, et al. Low energy helium ion implantation induced quantum-well intermixing. J Semicond, 2007, 28(1), 47
[14]
Ge X H, Zhang R Y, Guo C Y, et al. Stduy of multiple factors ion-implantation-induced quantum wells intermixing. Laser Optoelectron Prog, 2020, 57(1), 7
[15]
Fang X H, Bao X M. Study on mechanism of Si diffusion in GaAs. J Semicond, 1996(17), 922
[16]
Ali N B, Harrison I, Ho H P, et al. Annealing-induced dislocation loops in Si-doped GaAs-AlAs superlattices. J Mater Sci - Mater Electron, 1993, 4(1), 29 doi: 10.1007/BF00226630
[17]
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[18]
Zhou L. Research on anti catastrophic optical damage of high power semiconductor laser diodes. Changchun: Changchun University of Science and Technology, 2014
[19]
Wang X, Zhao Y H, Zhu L N, et al. Impurity-free vacancy diffusion induces quantum well intermixing in 915 nm semiconductor laser based on SiO2 film. Acta Photonica Sinica, 2018, 47(3), 7 doi: 10.3788/gzxb20184703.0314003
[20]
Lin S J, Li J J, He L J, et al. Enhanced AlGaAs/InGaAs quantum well intermixing by the technology of cycles annealing. J Optoelectron Laser, 2014, 25(8), 5 doi: 10.1117/12.2068982
[21]
Lin T, Ning S H, Li J J, et al. Temperature-dependent photoluminescence characteristics of strained GaInP quantum well structure. Acta Photonica Sinica, 2019, 48(1), 6 doi: 10.3788/gzxb20194801.0125001
[22]
Tjeertes D, Vela A, Verstijnen T, et al. Atomic-scale study of Si-doped AlAs by cross-sectional scanning tunneling microscopy and density functional theory. Phys Rev B, 2021, 104(12), 125433 doi: 10.1103/PhysRevB.104.125433
[23]
Liu C C, Lin N, Ma X Y, et al. High performance InGaAs/AlGaAs quantum well semiconductor laser diode with non-absorption window. Chin J Lumin, 2022, 43(1), 9
Fig. 1.  (Color online) Variation of Al component concentration with diffusion distance.

Fig. 2.  (Color online) Variation of quantum well gain spectrum peaks with Al atom diffusion distances.

Fig. 3.  (Color online) The relationship between the interdiffusion coefficient of group III atoms and temperature.

Fig. 4.  (Color online) Schematic diagram of GaInP/AlGaInP QW semiconductor laser

Fig. 5.  (Color online) PL spectrum of GaInP/AlGaInP quantum well laser. (a) The mapping results of PL testing. (b) PL spectrum of epitaxial layer.

Fig. 6.  (Color online) ECV test results of GaInP/AlGaInP quantum well epitaxial layer.

Fig. 7.  The process of lift-off technique.

Fig. 8.  (Color online) Sample surface after annealing at 580 °C/10 min.

Fig. 9.  The PL spectrum under the annealing condition of 580 °C/10 min.

Fig. 10.  (Color online) Schematic diagram after growing Si–Si3N4 composited dielectric layers.

Fig. 11.  (Color online) The PL spectra at different annealing temperatures.

Fig. 12.  (Color online) ECV test result of the sample annealed at 580 °C/10 min.

Fig. 13.  (Color online) The PL spectra of the samples after annealing different cycles.

Table 1.   Stress between dielectric layers.

SubstrateDielectric layerStress (MPa)
GaAs100 nm Si3N4–1204.315
GaAs100 nm Si–570.124
Si100 nm Si3N4–755.056
DownLoad: CSV
[1]
Hu Y, Liang D, Mukherjee K, et al. III/V-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template. Light Sci Appl, 2019, 8(1), 93 doi: 10.1038/s41377-019-0202-6
[2]
Lu H Y, Tian S C, Tong C Z, et al. Extracting more light for vertical emission: high power continuous wave operation of 1.3-μm quantum-dot photonic-crystal surface-emitting laser based on a flat band. Light Sci Appl, 2019, 8(6), 944 doi: 10.1038/s41377-019-0214-2
[3]
Yuan Q H, Jing H Q, Zhang Q Y, et al. Development and applications of GaAs-based near-infrared high power semiconductor lasers. Laser Optoelectron Prog, 2019, 56(4), 040003 doi: 10.3788/LOP56.040003
[4]
Sin Y, Ives N, LaLumondiere S, et al. Catastrophic optical bulk damage (COBD) in high power multi-mode InGaAs-AlGaAs strained quantum well lasers. High-Power Diode Laser Technology and Applications IX, 2011, 791803
[5]
Tian W N, Xiong C, Wang X, et al. Impurity-free vacancy diffusion induces intermixing in GaInP/AlGaInP quantum wells using GaAs encapsulation. Chin J Lumin, 2018, 39(8), 5 doi: 10.3788/fgxb20183908.1095
[6]
Chinone N, Nakashima H, Ito R. Long-term degradation of GaAs-Ga1− xAl xAs DH lasers due to facet erosion. J Appl Phys, 1977, 48(3), 1160 doi: 10.1063/1.323796
[7]
He T J, Jing H Q, Zhu L N, et al. Research on quantum well intermixing of 915 nm InGaAsP/GaAsP primary epitaxial wafers. Acta Opt Sinica, 2022, 42(1), 0114003
[8]
Deppe D G, Holonyak N. Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructures. J Appl Phys, 1988, 64(12), R93 doi: 10.1063/1.341981
[9]
Kaliski R W, Ito C R, McIntyre D G, et al. Influence of annealing and substrate orientation on metalorganic chemical vapor deposition GaAs on silicon heteroepitaxy. J Appl Phys, 1988, 64(3), 1196 doi: 10.1063/1.341884
[10]
Cong G W, Akimoto R, Gozu S, et al. Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells. Appl Phys Lett, 2010, 96(10), 221115 doi: 10.1063/1.3357433
[11]
Peng H T. Improving the COD level of high-power semiconductor lasers using quantum well intermixing. Tianjin: Hebei University of Technology, 2007
[12]
Liu C C, Lin N, Xiong C, et al. Intermixing in InGaAs/AlGaAs quamtum well structures induced by the interdiffusion of Si impurities. Chin Opt, 2020, 13(1), 203 doi: 10.3788/co.20201301.0203
[13]
Zhou J T, Zhu H L, Cheng Y B, et al. Low energy helium ion implantation induced quantum-well intermixing. J Semicond, 2007, 28(1), 47
[14]
Ge X H, Zhang R Y, Guo C Y, et al. Stduy of multiple factors ion-implantation-induced quantum wells intermixing. Laser Optoelectron Prog, 2020, 57(1), 7
[15]
Fang X H, Bao X M. Study on mechanism of Si diffusion in GaAs. J Semicond, 1996(17), 922
[16]
Ali N B, Harrison I, Ho H P, et al. Annealing-induced dislocation loops in Si-doped GaAs-AlAs superlattices. J Mater Sci - Mater Electron, 1993, 4(1), 29 doi: 10.1007/BF00226630
[17]
Yamada N, Roos G, Harris J S. Threshold reduction in strained InGaAs single quantum well lasers by rapid thermal annealing. Appl Phys Lett, 1991, 59(9), 1040 doi: 10.1063/1.106338
[18]
Zhou L. Research on anti catastrophic optical damage of high power semiconductor laser diodes. Changchun: Changchun University of Science and Technology, 2014
[19]
Wang X, Zhao Y H, Zhu L N, et al. Impurity-free vacancy diffusion induces quantum well intermixing in 915 nm semiconductor laser based on SiO2 film. Acta Photonica Sinica, 2018, 47(3), 7 doi: 10.3788/gzxb20184703.0314003
[20]
Lin S J, Li J J, He L J, et al. Enhanced AlGaAs/InGaAs quantum well intermixing by the technology of cycles annealing. J Optoelectron Laser, 2014, 25(8), 5 doi: 10.1117/12.2068982
[21]
Lin T, Ning S H, Li J J, et al. Temperature-dependent photoluminescence characteristics of strained GaInP quantum well structure. Acta Photonica Sinica, 2019, 48(1), 6 doi: 10.3788/gzxb20194801.0125001
[22]
Tjeertes D, Vela A, Verstijnen T, et al. Atomic-scale study of Si-doped AlAs by cross-sectional scanning tunneling microscopy and density functional theory. Phys Rev B, 2021, 104(12), 125433 doi: 10.1103/PhysRevB.104.125433
[23]
Liu C C, Lin N, Ma X Y, et al. High performance InGaAs/AlGaAs quantum well semiconductor laser diode with non-absorption window. Chin J Lumin, 2022, 43(1), 9
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    Received: 10 February 2022 Revised: 14 March 2022 Online: Accepted Manuscript: 18 May 2022Uncorrected proof: 24 May 2022Published: 01 August 2022

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      Tianjiang He, Suping Liu, Wei Li, Cong Xiong, Nan Lin, Li Zhong, Xiaoyu Ma. Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si3N4 dielectric layer[J]. Journal of Semiconductors, 2022, 43(8): 082301. doi: 10.1088/1674-4926/43/8/082301 T J He, S P Liu, W Li, C Xiong, N Lin, L Zhong, X Y Ma. Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si3N4 dielectric layer[J]. J. Semicond, 2022, 43(8): 082301. doi: 10.1088/1674-4926/43/8/082301Export: BibTex EndNote
      Citation:
      Tianjiang He, Suping Liu, Wei Li, Cong Xiong, Nan Lin, Li Zhong, Xiaoyu Ma. Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si3N4 dielectric layer[J]. Journal of Semiconductors, 2022, 43(8): 082301. doi: 10.1088/1674-4926/43/8/082301

      T J He, S P Liu, W Li, C Xiong, N Lin, L Zhong, X Y Ma. Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si3N4 dielectric layer[J]. J. Semicond, 2022, 43(8): 082301. doi: 10.1088/1674-4926/43/8/082301
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      Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si3N4 dielectric layer

      doi: 10.1088/1674-4926/43/8/082301
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      • Author Bio:

        Tianjiang He got his BS from Huazhong University of Science and Technology in 2019. Now he is a PhD student at University of Chinese Academy of Sciences under the supervision of Prof. Xiaoyu Ma. His research focuses on high power semiconductor lasers

        Suping Liu got her BS degree in 1992 and MS degree in 1995 at Jilin University. Then she joined Xiaoyu Ma Group at Institute of Semiconductors, Chinese Academy of Sciences as a senior engineer. Her research interests include high power semiconductor lasers and their components, solid state lasers and storage lasers

      • Corresponding author: spliu@semi.ac.cn
      • Received Date: 2022-02-10
      • Revised Date: 2022-03-14
      • Available Online: 2022-05-18

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