EDITORIAL

Preface to Special Topic on Twisted van der Waals Heterostructures

Jun Zhang1, 2, and Zhongming Wei1, 2,

+ Author Affiliations

 Corresponding author: Jun Zhang, zhangjwill@semi.ac.cn; Zhongming Wei, zmwei@semi.ac.cn

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[1]
Huang X Y, Han X, Dai Y Y, et al. Recent progress on fabrication and flat-band physics in 2D transition metal dichalcogenides moiré superlattices. J Semicond, 2023, 44, 011901 doi: 10.1088/1674-4926/44/1/011901
[2]
Li Z Y, Lai J M, Zhang J. Review of phonons in moiré superlattices. J Semicond, 2023, 44, 011902 doi: 10.1088/1674-4926/44/1/011902
[3]
Gao Y C, Ye Y. Interaction of moiré excitons with cavity photons in two-dimensional semiconductor hetero-bilayers. J Semicond, 2023, 44, 011903 doi: 10.1088/1674-4926/44/2/011903
[4]
Li H, Ling J Y, Lin J M, et al. Interface engineering in two-dimensional heterostructures towards novel emitters. J Semicond, 2023, 44, 011001 doi: 10.1088/1674-4926/44/1/011001
[5]
Zhang X H, Peng B. The twisted two-dimensional ferroelectrics. J Semicond, 2023, 44, 011002 doi: 10.1088/16744926/44/2/011002
[6]
Zhao S W, Shao G L, Han Z V, et al. Gate tunable spatial accumulation of valley-spin in chemical vapor deposition grown 40-degree-twisted bilayer WS2. J Semicond, 2023, 44, 012001 doi: 10.1088/1674-4926/44/1/012001
[7]
Lu X. Single photon emitters originating from donor–acceptor pairs. J Semicond, 2023, 44, 010401 doi: 10.1088/1674-4926/44/1/010401
[8]
Tan Q H, Lai J M, Liu X L, et al. Donor-acceptor pair quantum emitters in hexagonal boron nitride. Nano Lett, 2022, 22, 1331 doi: 10.1021/acs.nanolett.1c04647
[9]
Chen M Y, Chen F Q, Cheng B, et al. Moiré heterostructures: highly tunable platforms for quantum simulation and future computing. J Semicond, 2023, 44, 010301 doi: 10.1088/16744926/44/2/010301
[1]
Huang X Y, Han X, Dai Y Y, et al. Recent progress on fabrication and flat-band physics in 2D transition metal dichalcogenides moiré superlattices. J Semicond, 2023, 44, 011901 doi: 10.1088/1674-4926/44/1/011901
[2]
Li Z Y, Lai J M, Zhang J. Review of phonons in moiré superlattices. J Semicond, 2023, 44, 011902 doi: 10.1088/1674-4926/44/1/011902
[3]
Gao Y C, Ye Y. Interaction of moiré excitons with cavity photons in two-dimensional semiconductor hetero-bilayers. J Semicond, 2023, 44, 011903 doi: 10.1088/1674-4926/44/2/011903
[4]
Li H, Ling J Y, Lin J M, et al. Interface engineering in two-dimensional heterostructures towards novel emitters. J Semicond, 2023, 44, 011001 doi: 10.1088/1674-4926/44/1/011001
[5]
Zhang X H, Peng B. The twisted two-dimensional ferroelectrics. J Semicond, 2023, 44, 011002 doi: 10.1088/16744926/44/2/011002
[6]
Zhao S W, Shao G L, Han Z V, et al. Gate tunable spatial accumulation of valley-spin in chemical vapor deposition grown 40-degree-twisted bilayer WS2. J Semicond, 2023, 44, 012001 doi: 10.1088/1674-4926/44/1/012001
[7]
Lu X. Single photon emitters originating from donor–acceptor pairs. J Semicond, 2023, 44, 010401 doi: 10.1088/1674-4926/44/1/010401
[8]
Tan Q H, Lai J M, Liu X L, et al. Donor-acceptor pair quantum emitters in hexagonal boron nitride. Nano Lett, 2022, 22, 1331 doi: 10.1021/acs.nanolett.1c04647
[9]
Chen M Y, Chen F Q, Cheng B, et al. Moiré heterostructures: highly tunable platforms for quantum simulation and future computing. J Semicond, 2023, 44, 010301 doi: 10.1088/16744926/44/2/010301
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    Received: 31 December 2022 Revised: Online: Accepted Manuscript: 06 January 2023Uncorrected proof: 10 January 2023Published: 14 January 2023

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      Jun Zhang, Zhongming Wei. Preface to Special Topic on Twisted van der Waals Heterostructures[J]. Journal of Semiconductors, 2023, 44(1): 010101. doi: 10.1088/1674-4926/44/1/010101 J Zhang, Z M Wei. Preface to Special Topic on Twisted van der Waals Heterostructures[J]. J. Semicond, 2023, 44(1): 010101. doi: 10.1088/1674-4926/44/1/010101Export: BibTex EndNote
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      Jun Zhang, Zhongming Wei. Preface to Special Topic on Twisted van der Waals Heterostructures[J]. Journal of Semiconductors, 2023, 44(1): 010101. doi: 10.1088/1674-4926/44/1/010101

      J Zhang, Z M Wei. Preface to Special Topic on Twisted van der Waals Heterostructures[J]. J. Semicond, 2023, 44(1): 010101. doi: 10.1088/1674-4926/44/1/010101
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      Preface to Special Topic on Twisted van der Waals Heterostructures

      doi: 10.1088/1674-4926/44/1/010101
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      • Author Bio:

        Jun Zhang received a bachelor's degree from Inner Mongolia University in China in 2004, and a Ph.D. from the Institute of Semiconductors, Chinese Academy of Sciences in 2010. Then he worked as a postdoctoral fellow at Nanyang Technological University in Singapore from 2010 to 2015 and joined the State Key laboratory of Superlattice for Semiconductors (CAS) as a professor in 2015. His current researches focus on light-matter interactions in semiconductor materials including Raman and Brillouin scattering, and laser cooling in semiconductors

        Zhongming Wei received his B.S. from Wuhan University (China) in 2005, and Ph.D. from the Institute of Chemistry, Chinese Academy of Sciences in 2010 under the supervision of Prof. Daoben Zhu and Prof. Wei Xu. From August 2010 to January 2015, he worked as a postdoctoral fellow and then Assistant Professor in Prof. Thomas Bjørnholm's group at University of Copenhagen, Denmark. Currently, he is working as a Professor at the Institute of Semiconductors, Chinese Academy of Sciences. His research interests include low-dimensional semiconductors and their optoelectronic devices

      • Corresponding author: zhangjwill@semi.ac.cnzmwei@semi.ac.cn
      • Received Date: 2022-12-31
      • Accepted Date: 2022-12-31
      • Available Online: 2023-01-06

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