J. Semicond. > 2023, Volume 44 > Issue 1 > 011002, doi: 10.1088/1674-4926/44/1/011002
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REVIEWS

The twisted two-dimensional ferroelectrics

Xinhao Zhang1, 2 and Bo Peng1, 2,

+ Author Affiliations

 Corresponding author: Bo Peng, bo_peng@uestc.edu.cn

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Abstract: Since the beginning of research on two-dimensional (2D) materials, a few numbers of 2D ferroelectric materials have been predicted or experimentally confirmed, but 2D ferroelectrics as necessary functional materials are greatly important in developing future electronic devices. Recent breakthroughs in 2D ferroelectric materials are impressive, and the physical and structural properties of twisted 2D ferroelectrics, a new type of ferroelectric structure by rotating alternating monolayers to form an angle with each other, have attracted widespread interest and discussion. Here, we review the latest research on twisted 2D ferroelectrics, including Bernal-stacked bilayer graphene/BN, bilayer boron nitride, and transition metal dichalcogenides. Finally, we prospect the development of twisted 2D ferroelectrics and discuss the challenges and future of 2D ferroelectric materials.

Key words: magic angle, multiferroic, ferromagnetic, electric polarization, long-range



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Fig. 1.  (Color online) (a) Schematic crystal structure of In2Se3 (reproduced with permission from Ref. [77], © Ding, W. J. et al. 2017). (b) PFM phase and amplitude images of a thin α-In2Se3 flake, respectively (reproduced with permission from Ref. [45], © 2017 American Chemical Society). (c) The phase images for both OOP and IP polarization of a 6 nm thick In2Se3 flake (reproduced with permission from Ref. [46], © 2018 American Chemical Society). (d) Schematic crystal structure of 2H α-In2Se3 in 1 to 4 layers. (e) Schematic of IP polarization rearrangement under electric field. (d) and (e) Reproduced with permission from Ref. [50], © The Royal Society of Chemistry 2021. (f) Ferroelectric hysteresis loops of 8 nm thick α-In2Se3 film (reproduced with permission from Ref. [48], © Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020).

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Fig. 2.  (Color online) (a) Schematic structure of α-In2Se3 FeS-FET and switching characteristics of α-In2Se3 FeS-FET (reproduced with permission from Ref. [3], Copyright © 2019, Mengwei Si et al.). (b) Schematic structure of α-In2Se3 FeCTs and switching characteristics of α-In2Se3 FeCTs (reproduced with permission from Ref. [19], Copyright © 2021, Shuiyuan Wang et al.).

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Fig. 3.  (Color online) (a) Schematic crystal structure of CuInP2S6. (b) AFM images and BEPFM images of CuInP2S6 flake (reproduced with permission from Ref. [51], Copyright © 2015, American Chemical Society). (c) AFM images and PFM images of CuInP2S6 flake. (d) Electric characterization of the vdW CuInP2S6/Si diode (Inset: schematic structure of ferroelectric diode based on CuInP2S6 heterostructure). (a), (c) and (d) Reproduced with permission from Ref. [52], Copyright © 2016, Fucai Liu et al.

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Fig. 4.  (Color online) (a) Optical microscopy and AFM images of d1T-MoTe2. (b) PFM phase hysteretic and butterfly loops of monolayer d1T-MoTe2. (c) Schematic atomic structure of d1T-MoTe2. (d) Electric characterization and structure of the FTJ device d1T-MoTe2. (a-d) Reproduced with permission from Ref. [44], Copyright © 2019, Shuoguo Yuan et al.

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Fig. 5.  (Color online) (a) Schematic crystal structure of Bernal-stacked bilayer graphene (reproduced with permission from Ref. [91], © Springer Nature 2022). (b) Schematic of dual-gate devices N0, H2 and H4. (c) Four-probe resistance for devices N0, H2 and H4. (d) Hysteretic transport behavior for device H4. (Inset: ‘zigzag’ patterns illustrate how data are obtained.) (e) and (f) Forward and backward scan for VBG sweep between –50 and 50 V. (g) The difference between measured in (e) and (f). (b-g) Reproduced with permission from Ref. [74], © Zheng Z et al. 2020.

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Fig. 6.  (Color online) (a) Schematic crystal structure of AB-stacked and BA-stacked BN. (b) PFM phase and amplitude images of twisted bilayer BN, respectively. (c) Resistance Rxx of graphene for the device as a function of the top gate and bottom gate, respectively (Inset: dual-gate P-BBN device structure). (d) Ferroelectric switching in twisted bilayer BN. (e) Temperature dependence of polarization and graphene resistance Rxx, respectively. (f) Room-temperature operation of a ferroelectric field-effect transistor. (a-f) Reproduced with permission from Ref. [75], © 2021 American Association for the Advancement of Science.

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Fig. 7.  (Color online) (a) Schematic crystal structure of H-stacked and R-stacked (MX and XM) TMDs, respectively. (b) PFM phase and amplitude images of MoSe2, respectively. (c) Schematic illustration of lateral PFM measurement on MoSe2. (d) Resistance Rxx of graphene for TMDs device as a function of the top gate and bottom gate, respectively (Inset: dual-gate R-stacked TMDs device structure). (e) Ferroelectric switching in small-angel twisted bilayer WSe2 d1 device. (f) Schematic of polarization switching in WSe2 d1 and d2 device and temperature dependence of graphene resistance Rxx, respectively. (a-f) Reproduced with permission from Ref. [76], © 2021 Springer Nature 2022.

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Table 1.   Proved 2D ferroelectric materials.

MaterialTc (K)PolarizationRef.
d1T-MoTe2
In2Se3
α-In2Se3
β’-In2Se3
2H α-In2Se3
CuInP2S6
SnTe
WTe2
BA2PbCl4		RT
700
RT
473
RT
315
270
350
453		Out-of-plane
Out-of-plane
In-plane/Out-of-plane
In-plane
In-plane/Out-of-plane
Out-of-plane
In-plane
Out-of-plane
In-plane		[44]
[47]
[45, 46, 48]
[49]
[50]
[51, 52]
[53]
[54]
[55]
RT: room temperature.
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Table 2.   Twisted 2D ferroelectricity.

MaterialTcAngleLayersRef.
Bernal-stacked bilayer graphene/BN
BN
MoSe2
MoS2
WSe2
WS2		—
>RT
>RT
>RT
>RT
>RT		30°/0°
0.6°/0°
0.25°/0°
0.25°/0°
0.25°/0°
0.25°/0°		Four-layers
Bilayer
Bilayer
Bilayer
Bilayer
Bilayer		[74]
[75]
[76]
[76]
[76]
[76]
RT: room temperature.
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    Received: 21 November 2022 Revised: 24 December 2022 Online: Accepted Manuscript: 30 December 2022Uncorrected proof: 30 December 2022Published: 14 January 2023

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      Article Navigation >  Journal of Semiconductors  > 2023  >  44(1): 011002
      Xinhao Zhang, Bo Peng. The twisted two-dimensional ferroelectrics[J]. Journal of Semiconductors, 2023, 44(1): 011002. doi: 10.1088/1674-4926/44/1/011002 X H Zhang, B Peng. The twisted two-dimensional ferroelectrics[J]. J. Semicond, 2023, 44(1): 011002. doi: 10.1088/1674-4926/44/1/011002Export: BibTex EndNote
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      Xinhao Zhang, Bo Peng. The twisted two-dimensional ferroelectrics[J]. Journal of Semiconductors, 2023, 44(1): 011002. doi: 10.1088/1674-4926/44/1/011002

      X H Zhang, B Peng. The twisted two-dimensional ferroelectrics[J]. J. Semicond, 2023, 44(1): 011002. doi: 10.1088/1674-4926/44/1/011002
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      The twisted two-dimensional ferroelectrics

      doi: 10.1088/1674-4926/44/1/011002
      • 1.

        National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China

      • 2.

        Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China

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      • Author Bio:

        Xinhao Zhang received his B.E. degree from Yangzhou University in 2020. He is a master's student at the National Engineering Research Center for Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China. He is currently working on the visible and infrared properties of MXene materials

        Bo Peng Professor, received his B.S. (Honors) from Lanzhou University in 2005, and obtained his doctor of philosophy from Technical Institute of Physics and Chemistry, Chinese Academy of Sciences in 2010. He did his postdoctoral research in Singapore between 2010 and 2015. He is currently the head of the Magneto-optical 2D Materials Group in University of Electronic Science and Technology of China. His researches are focused on the two-dimensional multiferroic materials toward spintronic and in-memory computing devices

      • Corresponding author: bo_peng@uestc.edu.cn
      • Received Date: 2022-11-21
      • Revised Date: 2022-12-24
        • Available Online: 2022-12-30

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