J. Semicond. > 2023, Volume 44 > Issue 1 > 011901, doi: 10.1088/1674-4926/44/1/011901
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REVIEWS

Recent progress on fabrication and flat-band physics in 2D transition metal dichalcogenides moiré superlattices

Xinyu Huang1, X, Xu Han1, 2, 3, X, Yunyun Dai1, Xiaolong Xu4, Jiahao Yan4, Mengting Huang4, Pengfei Ding1, Decheng Zhang1, Hui Chen1, Vijay Laxmi4, Xu Wu1, Liwei Liu4, Yeliang Wang4, 5, , Yang Xu2, 3, and Yuan Huang1, 5,

+ Author Affiliations

 Corresponding author: Yeliang Wang, yeliang.wang@bit.edu.cn; Yang Xu, yang.xu@iphy.ac.cn; Yuan Huang, yhuang@bit.edu.cn

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Abstract: Moiré superlattices are formed when overlaying two materials with a slight mismatch in twist angle or lattice constant. They provide a novel platform for the study of strong electronic correlations and non-trivial band topology, where emergent phenomena such as correlated insulating states, unconventional superconductivity, and quantum anomalous Hall effect are discovered. In this review, we focus on the semiconducting transition metal dichalcogenides (TMDs) based moiré systems that host intriguing flat-band physics. We first review the exfoliation methods of two-dimensional materials and the fabrication technique of their moiré structures. Secondly, we overview the progress of the optically excited moiré excitons, which render the main discovery in the early experiments on TMD moiré systems. We then introduce the formation mechanism of flat bands and their potential in the quantum simulation of the Hubbard model with tunable doping, degeneracies, and correlation strength. Finally, we briefly discuss the challenges and future perspectives of this field.

Key words: flat-band physics, two-dimensional materials, moiré superlattices, Hubbard model, moiré excitons



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Fig. 1.  (Color online) Schematic illustration of the topics of this review, including the fabrication methods and several distinctive properties of the twisted moiré materials[4–6]. ([4] Copyright 2018, American Physical Society. [5] Copyright 2018, American Physical Society. [6] Copyright 2021, Nature Publishing Group (NPG).)

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Fig. 2.  (Color online) Mechanism of Au-film-assisted exfoliation technology and some examples of exfoliated 2D crystals. (a) Part of the periodic table, showing the elements involved in most 2D materials between groups 4 (IVB) and 17 (VIIA). Most of the layered crystals are composed of the elements with pink and green colors, which have strong interaction with Au. (b) Schematic of the interaction mechanism between layered crystal and Au. Once the interface interaction energy is larger than the interlayer interaction, monolayer flakes can be exfoliated. (c) Schematic illustration of the Au-film-assisted exfoliation process. (d) Optical images of large exfoliated 2D flakes[50]. Copyright 2022, Nature Publishing Group (NPG).

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Fig. 3.  (Color online) Ag-assisted exfoliation procedures and optical images of exfoliated samples. (a) Schematic illustration of the exfoliation procedures. (b) Exfoliated macroscopic MoS2 and WS2 on 15 nm Ag film supported by SiO2/Si substrates, and bulk crystals on PDMS tapes. (c) Exfoliated macroscopic MoS2 supported by sapphire substrates. (d) Exfoliated MoS2 supported by elastic PET substrates. (e) Exfoliated MoS2 on Ag/epoxy/glass slide substrate. (f) Optical microscope images of some 2D crystals exfoliated on 15 nm Ag film, including MoS2, WS2, 1T-WTe2, and BP. (g) Optical microscope images of exfoliated millimeter size 2D crystals on 5 nm Ag film, including ReSe2, Fe3GeTe2, FeSe, and TaS2. (h, i) Optical microscope images of exfoliated millimeter size MoS2 on sapphire substrate and TS Ag, respectively. (j) Optical microscope and PL mapping images of exfoliated monolayer WS2 on 15 nm Ag film with hole array, the scale bars in the two images are 40 and 20 μm, respectively[51]. Copyright 2022, Wiley Online Library.

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Fig. 4.  (Color online) Fabrication process and characterization of suspended 2D materials. (a) Schematic images for preparing suspended samples. (b–d) Optical images of exfoliated graphene, MoS2 and WSe2 on different patterned substrates, including rectangle, Hall bar and circular hole structures. (e) PL mapping image of suspended monolayer WSe2[48]. Copyright 2022, Wiley Online Library.

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Fig. 5.  (Color online) Tear-rotate-stack method for fabricating 2D twisted heterostructure. (a) Schematic of cutting the 2D materials with femtosecond laser to get the straight edge for twist angle reference[54]. Copyright 2016, Wiley Online Library. (b) Preparing the twisted bilayer graphene with desired twist angle using the tear-rotate-stack method[53]. Copyright 2017, National Academy of Sciences (NAS). (c) The tear-rotate-stack method to fabricate the twisted MoS2 homostructures from the as-grown wafer MoS2 monolayer. (d) Optical image of 30° twisted bilayer MoS2[55]. Copyright 2020, Nature Publishing Group (NPG).

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Fig. 6.  (Color online) Schematic illustration of the band structure and Hubbard model simulation of the TMD moiré systems. (a) showing the narrowing of bandwidth with a larger wavelength (λ) of the periodic potential well for 1D lattice in the nearly-free electron approximation. The additional periodic potential folds the bands into a mini-Brillouin zone with boundary at ±π/λ. The lowest band (orange) becomes narrower with the bandwidth tuned by λ. (b) Typical band alignment of angle-aligned heterobilayers and AB stacked homobilayers with SU(2) and SU(4) symmetry, respectively. (c) Schematic illustration of the inter-site hopping term t, on-site Coulomb repulsion U, and inter-site Coulomb repulsion V. (d) Quantum phase diagram of the half-filled triangular lattice.

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Fig. 7.  (Color online) Simulation of Hubbard model in the strong correlation limit. (a) Rydberg sensing of the abundant correlated insulating states in WSe2/WS2 described by a single-band extended Hubbard model with SU(2) symmetry. (b) Charge configuration at several typical fillings in (a)[78]. (c) Electric-field-controlled layer polarization of t-WSe2 (mapped to a SU(4) bilayer Hubbard model) probed by the moiré exciton resonance. The dashed line denotes the boundary of fully polarized states (|P| = 1, in blue). (d) Doping dependence of MCD (proportional to sample magnetization) with P = 0 (blue) and P = 1 (black)[84]. The vanishing magnetization at ν = 2, P = 1 is related to the formation of antiferromagnetic order. (e) Charge/spin configuration of an excitonic insulator and an antiferromagnetic insulator in AB-stacked t-WSe2.

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Fig. 8.  (Color online) Hubbard model physics with an intermediate correlation[87]. (a) Longitudinal resistance ρxx at T = 20 K, B = 0 T in angle-aligned 3L-MoTe2/WSe2. A resistance peak is discovered at ν = 1. (b) Evolution of the gates-dependent ρxx as a function of temperature. (c) Temperature dependence of ρxx at ν = 1 and D = 1.313 V/nm. At low temperatures, the ρxx accords well with the blue dashed curve (∝T2) denoting a Fermi-liquid behavior. (d) Magnetic-field dependence of the ν = 1 resistance at T = 0.3 K. Sharp resistance peaks occur above the critical magnetic field Bc ≈ 6 T. (e) Phase diagram of 3L-MoTe2/WSe2 at half filling.

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Fig. 9.  (Color online) Kane–Mele–Hubbard model in AB stacked WSe2/MoTe2[6]. (a) Schematic illustration of the electric-field-induced topological phase transitions. (b) Longitudinal resistance Rxx at T = 300 mK, B = 0 T, with the green dashed circle denoting the quantum anomalous Hall region. (c) Hall (Rxy) and (d) longitudinal (Rxx) resistances versus B-field in the QAH region. Quantized Rxy and vanishing Rxx are observed at low temperatures. (e) Electric-field dependence of Rxx at ν = 1 under zero magnetic field at varying temperatures. (f) Electric-field dependence of the extracted charge gap (∆C by thermal activation fits to the resistance data, ∆tr by direct compressibility measurements) at ν = 1 from the Mott insulating region to the QAH region and the metallic region.

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    Received: 15 November 2022 Revised: 10 December 2022 Online: Accepted Manuscript: 20 December 2022Uncorrected proof: 21 December 2022Published: 14 January 2023

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      Article Navigation >  Journal of Semiconductors  > 2023  >  44(1): 011901
      Xinyu Huang, Xu Han, Yunyun Dai, Xiaolong Xu, Jiahao Yan, Mengting Huang, Pengfei Ding, Decheng Zhang, Hui Chen, Vijay Laxmi, Xu Wu, Liwei Liu, Yeliang Wang, Yang Xu, Yuan Huang. Recent progress on fabrication and flat-band physics in 2D transition metal dichalcogenides moiré superlattices[J]. Journal of Semiconductors, 2023, 44(1): 011901. doi: 10.1088/1674-4926/44/1/011901 X Y Huang, X Han, Y Y Dai, X L Xu, J H Yan, M T Huang, P F Ding, D C Zhang, H Chen, V Laxmi, X Wu, L W Liu, Y L Wang, Y Xu, Y Huang. Recent progress on fabrication and flat-band physics in 2D transition metal dichalcogenides moiré superlattices[J]. J. Semicond, 2023, 44(1): 011901. doi: 10.1088/1674-4926/44/1/011901Export: BibTex EndNote
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      Xinyu Huang, Xu Han, Yunyun Dai, Xiaolong Xu, Jiahao Yan, Mengting Huang, Pengfei Ding, Decheng Zhang, Hui Chen, Vijay Laxmi, Xu Wu, Liwei Liu, Yeliang Wang, Yang Xu, Yuan Huang. Recent progress on fabrication and flat-band physics in 2D transition metal dichalcogenides moiré superlattices[J]. Journal of Semiconductors, 2023, 44(1): 011901. doi: 10.1088/1674-4926/44/1/011901

      X Y Huang, X Han, Y Y Dai, X L Xu, J H Yan, M T Huang, P F Ding, D C Zhang, H Chen, V Laxmi, X Wu, L W Liu, Y L Wang, Y Xu, Y Huang. Recent progress on fabrication and flat-band physics in 2D transition metal dichalcogenides moiré superlattices[J]. J. Semicond, 2023, 44(1): 011901. doi: 10.1088/1674-4926/44/1/011901
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      Recent progress on fabrication and flat-band physics in 2D transition metal dichalcogenides moiré superlattices

      doi: 10.1088/1674-4926/44/1/011901
      • 1.

        Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China

      • 2.

        Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

      • 3.

        School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China

      • 4.

        School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China

      • 5.

        BIT Chongqing Institute of Microelectronics and Microsystems, Chongqing 401332, China

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      • Author Bio:

        Xinyu Huang is a Ph.D. candidate at the School of Integrated Circuits and Electronics, Beijing Institute of Technology. Her current research interests focus on the preparation of 2D semiconductors, the design of nano devices, and also the physical properties of low-dimensional quantum materials

        Xu Han received his B.S. degree from Beijing University of Technology in 2018. He is currently a Ph.D. candidate at School of Integrated Circuits and Electronics, Beijing Institute of Technology. His research interest includes low-dimensional quantum structure and devices and photoelectrical properties of 2D semiconductors

        Yeliang Wang is a professor at Beijing Institute of Technology (BIT). He received his Ph.D. degree from Institute of Physics (IOP), CAS in 2004. Then he worked as a postdoctoral researcher at Max Planck Institute, Germany. He worked at IOP, CAS form 2008 to 2018. He joined BIT in 2018. His research interest is the surface science, low-dimensional quantum materials, and scanning tunneling microscopy

        Yang Xu is an associate professor at the Institute of Physics, Chinese Academy of Sciences. He received his Ph.D. degree in 2018 from Purdue University, after which he has worked in Cornell University as a postdoctoral researcher till the end of 2020. He joined IOP, CAS in 2020. His research interests are novel transport and optical properties of low-dimensional quantum materials

        Yuan Huang is a professor at Beijing Institute of Technology. He received his Ph.D. degree from Institute of Physics (IOP), CAS in 2013. Then, he worked at Brookhaven National Lab in USA and Institute of Basic Science in South Korea. From 2017 to 2021, he worked at IOP, CAS as an associate professor. He developed novel exfoliation methods for preparing large-scale and high-quality two-dimensional materials. His research interests focus on novel physical properties of 2D materials and high-performance devices

      • Corresponding author: yeliang.wang@bit.edu.cn; yang.xu@iphy.ac.cn; yhuang@bit.edu.cn
      • Received Date: 2022-11-15
      • Revised Date: 2022-12-10
        • Available Online: 2022-12-20

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