Gate tunable spatial accumulation of valley-spin in chemical vapor deposition grown 40°-twisted bilayer WS<sub>2</sub>

Siwen Zhao; Gonglei Shao; Zheng Vitto Han; Song Liu; Tongyao Zhang

doi:10.1088/1674-4926/44/1/012001

J. Semicond. > 2023, Volume 44 > Issue 1 > 012001, doi: 10.1088/1674-4926/44/1/012001

ARTICLES

Gate tunable spatial accumulation of valley-spin in chemical vapor deposition grown 40°-twisted bilayer WS₂

Siwen Zhao¹, Gonglei Shao², Zheng Vitto Han^{3, 4}, Song Liu^2, and Tongyao Zhang^{3, 4,}

+ Author Affiliations

Corresponding author: Song Liu, liusong@hnu.edu.cn; Tongyao Zhang, tongyao_zhang@sxu.edu.cn

Abstract: The emerging two-dimensional materials, particularly transition metal dichalcogenides (TMDs), are known to exhibit valley degree of freedom with long valley lifetime, which hold great promises in the implementation of valleytronic devices. Especially, light–valley interactions have attracted attentions in these systems, as the electrical generation of valley magnetization can be readily achieved — a rather different route toward magnetoelectric (ME) effect as compared to that from conventional electron spins. However, so far, the moiré patterns constructed with twisted bilayer TMDs remain largely unexplored in regard of their valley spin polarizations, even though the symmetry might be distinct from the AB stacked bilayer TMDs. Here, we study the valley Hall effect (VHE) in 40°-twisted chemical vapor deposition (CVD) grown WS₂ moiré transistors, using optical Kerr rotation measurements at 20 K. We observe a clear gate tunable spatial distribution of the valley carrier imbalance induced by the VHE when a current is exerted in the system.

Key words: transition metal dichalcogenides, valleytronic devices, light–valley interactions, valley Hall effect

References

[1]	Zhao S W, Li X X, Dong B J, et al. Valley manipulation in monolayer transition metal dichalcogenides and their hybrid systems: Status and challenges. Rep Prog Phys, 2021, 84, 026401 doi: 10.1088/1361-6633/abdb98
[2]	Mak K F, Xiao D, Shan J. Light–valley interactions in 2D semiconductors. Nat Photonics, 2018, 12, 451 doi: 10.1038/s41566-018-0204-6
[3]	Seyler K L, Zhong D, Huang B, et al. Valley manipulation by optically tuning the magnetic proximity effect in WSe₂/CrI₃ heterostructures. Nano Lett, 2018, 18, 3823 doi: 10.1021/acs.nanolett.8b01105
[4]	Ciarrocchi A, Unuchek D, Avsar A, et al. Polarization switching and electrical control of interlayer excitons in two-dimensional van der Waals heterostructures. Nat Photonics, 2019, 13, 131 doi: 10.1038/s41566-018-0325-y
[5]	Li L F, Shao L, Liu X W, et al. Room-temperature valleytronic transistor. Nat Nanotechnol, 2020, 15, 743 doi: 10.1038/s41565-020-0727-0
[6]	Lee J, Mak K F, Shan J. Electrical control of the valley Hall effect in bilayer MoS₂ transistors. Nat Nanotechnol, 2016, 11, 421 doi: 10.1038/nnano.2015.337
[7]	Wu Z F, Zhou B T, Cai X B, et al. Intrinsic valley Hall transport in atomically thin MoS₂. Nat Commun, 2019, 10, 611 doi: 10.1038/s41467-019-08629-9
[8]	Barré E, Incorvia J A C, Kim S H, et al. Spatial separation of carrier spin by the valley Hall effect in monolayer WSe₂ transistors. Nano Lett, 2019, 19, 770 doi: 10.1021/acs.nanolett.8b03838
[9]	Lee J, Wang Z F, Xie H C, et al. Valley magnetoelectricity in single-layer MoS₂. Nat Mater, 2017, 16, 887 doi: 10.1038/nmat4931
[10]	Vitale S A, Nezich D, Varghese J O, et al. Valleytronics: Valleytronics: Opportunities, challenges, and paths forward (Small 38/2018). Small, 2018, 14, 1870172 doi: 10.1002/smll.201870172
[11]	Chen X Z, Shi S Y, Shi G Y, et al. Observation of the antiferromagnetic spin Hall effect. Nat Mater, 2021, 20, 800 doi: 10.1038/s41563-021-00946-z
[12]	Jungwirth T, Wunderlich J, Olejník K. Spin Hall effect devices. Nat Mater, 2012, 11, 382 doi: 10.1038/nmat3279
[13]	Wang L, Shih E M, Ghiotto A, et al. Correlated electronic phases in twisted bilayer transition metal dichalcogenides. Nat Mater, 2020, 19, 861 doi: 10.1038/s41563-020-0708-6
[14]	Li E, Hu J X, Feng X M, et al. Lattice reconstruction induced multiple ultra-flat bands in twisted bilayer WSe₂. Nat Commun, 2021, 12, 5601 doi: 10.1038/s41467-021-25924-6
[15]	Pacchioni G. Valleytronics with a twist. Nat Rev Mater, 2020, 5, 480 doi: 10.1038/s41578-020-0220-2
[16]	Shao G L, Xue X X, Liu X, et al. Twist angle-dependent optical responses in controllably grown WS₂ vertical homojunctions. Chem Mater, 2020, 32, 9721 doi: 10.1021/acs.chemmater.0c03413
[17]	Cao T, Wang G, Han W P, et al. Valley-selective circular dichroism of monolayer molybdenum disulphide. Nat Commun, 2012, 3, 887 doi: 10.1038/ncomms1882
[18]	Zhang T Y, Zhao S W, Wang A R, et al. Electrically and magnetically tunable valley polarization in monolayer MoSe₂ proximitized by a 2D ferromagnetic semiconductor. Adv Funct Mater, 2022, 32, 2204779 doi: 10.1002/adfm.202204779
[19]	Li X T, Liu Z D, Liu Y H, et al. All-electrical control and temperature dependence of the spin and valley Hall effect in monolayer WSe₂ transistors. ACS Appl Electron Mater, 2022, 4, 3930 doi: 10.1021/acsaelm.2c00599
[20]	Plechinger G, Nagler P, Kraus J, et al. Identification of excitons, trions and biexcitons in single-layer WS₂. Phys Status Solidi RRL, 2015, 9, 457 doi: 10.1002/pssr.201510224
[21]	Gong Y Y, Carozo V, Li H Y, et al. High flex cycle testing of CVD monolayer WS₂ TFTs on thin flexible polyimide. 2D Mater, 2016, 3, 021008 doi: 10.1088/2053-1583/3/2/021008
[22]	Wu K, Zhong H X, Guo Q B, et al. Revealing the competition between defect-trapped exciton and band-edge exciton photoluminescence in monolayer hexagonal WS₂. Adv Opt Mater, 2022, 10, 2101971 doi: 10.1002/adom.202101971
[23]	Hu Z L, Avila J, Wang X Y, et al. The role of oxygen atoms on excitons at the edges of monolayer WS₂. Nano Lett, 2019, 19, 4641 doi: 10.1021/acs.nanolett.9b01670
[24]	Kim M S, Yun S J, Lee Y J, et al. Biexciton emission from edges and grain boundaries of triangular WS₂ monolayers. ACS Nano, 2016, 10, 2399 doi: 10.1021/acsnano.5b07214
[25]	Chow P K, Jacobs-Gedrim R B, Gao J, et al. Defect-induced photoluminescence in monolayer semiconducting transition metal dichalcogenides. ACS Nano, 2015, 9, 1520 doi: 10.1021/nn5073495

Fig. 1. (Color online) (a) Twisted bilayer WS₂ crystal structure and schematic of the band extrema at the K⁺ and K⁻ points in monolayer WS₂. The figure shows the conduction-band and valence-band spin splitting and the allowed optical transitions for circularly polarized light. (b) Schematic of the twisted bilayer WS₂ (t-WS₂)/h-BN heterojunction device. Optical microscope images of (c) twisted bilayer WS₂ transistor on SiO₂/Si, (d) t-WS₂/h-BN heterostructure, and (e) the final device after lithography patterning. The scale bar is 5 μm.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) (a) Source–drain current as a function of back-gate voltage V_g of the device at 20 K for V_ds =1 V. (b) PL spectra of the heterostructure at 20 K. In the PL plot, the thick green solid line indicates the measured data, and the red solid line shows the Gaussian fitting result. The four Gaussian components are attributed to the neutral excitons (X₀), trions (X^-), defect-trapped localized exciton (LX₁) or biexciton (XX), and defect-trapped localized exciton (LX₂).

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) Spatial map of the Kerr rotation angle under (a) V_g = –80 V, (b) V_g = 0 V, and (c) V_g = 20 V. Signals from metal electrodes are not shown as the polarization of reflected light from electrodes is destructed.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) Linecuts of the Kerr rotation map under different back gates. Original data and fits are open markers and solid lines, respectively, which are shifted vertically for clarity.

DownLoad: Full-Size Img PowerPoint

[1]	Zhao S W, Li X X, Dong B J, et al. Valley manipulation in monolayer transition metal dichalcogenides and their hybrid systems: Status and challenges. Rep Prog Phys, 2021, 84, 026401 doi: 10.1088/1361-6633/abdb98
[2]	Mak K F, Xiao D, Shan J. Light–valley interactions in 2D semiconductors. Nat Photonics, 2018, 12, 451 doi: 10.1038/s41566-018-0204-6
[3]	Seyler K L, Zhong D, Huang B, et al. Valley manipulation by optically tuning the magnetic proximity effect in WSe₂/CrI₃ heterostructures. Nano Lett, 2018, 18, 3823 doi: 10.1021/acs.nanolett.8b01105
[4]	Ciarrocchi A, Unuchek D, Avsar A, et al. Polarization switching and electrical control of interlayer excitons in two-dimensional van der Waals heterostructures. Nat Photonics, 2019, 13, 131 doi: 10.1038/s41566-018-0325-y
[5]	Li L F, Shao L, Liu X W, et al. Room-temperature valleytronic transistor. Nat Nanotechnol, 2020, 15, 743 doi: 10.1038/s41565-020-0727-0
[6]	Lee J, Mak K F, Shan J. Electrical control of the valley Hall effect in bilayer MoS₂ transistors. Nat Nanotechnol, 2016, 11, 421 doi: 10.1038/nnano.2015.337
[7]	Wu Z F, Zhou B T, Cai X B, et al. Intrinsic valley Hall transport in atomically thin MoS₂. Nat Commun, 2019, 10, 611 doi: 10.1038/s41467-019-08629-9
[8]	Barré E, Incorvia J A C, Kim S H, et al. Spatial separation of carrier spin by the valley Hall effect in monolayer WSe₂ transistors. Nano Lett, 2019, 19, 770 doi: 10.1021/acs.nanolett.8b03838
[9]	Lee J, Wang Z F, Xie H C, et al. Valley magnetoelectricity in single-layer MoS₂. Nat Mater, 2017, 16, 887 doi: 10.1038/nmat4931
[10]	Vitale S A, Nezich D, Varghese J O, et al. Valleytronics: Valleytronics: Opportunities, challenges, and paths forward (Small 38/2018). Small, 2018, 14, 1870172 doi: 10.1002/smll.201870172
[11]	Chen X Z, Shi S Y, Shi G Y, et al. Observation of the antiferromagnetic spin Hall effect. Nat Mater, 2021, 20, 800 doi: 10.1038/s41563-021-00946-z
[12]	Jungwirth T, Wunderlich J, Olejník K. Spin Hall effect devices. Nat Mater, 2012, 11, 382 doi: 10.1038/nmat3279
[13]	Wang L, Shih E M, Ghiotto A, et al. Correlated electronic phases in twisted bilayer transition metal dichalcogenides. Nat Mater, 2020, 19, 861 doi: 10.1038/s41563-020-0708-6
[14]	Li E, Hu J X, Feng X M, et al. Lattice reconstruction induced multiple ultra-flat bands in twisted bilayer WSe₂. Nat Commun, 2021, 12, 5601 doi: 10.1038/s41467-021-25924-6
[15]	Pacchioni G. Valleytronics with a twist. Nat Rev Mater, 2020, 5, 480 doi: 10.1038/s41578-020-0220-2
[16]	Shao G L, Xue X X, Liu X, et al. Twist angle-dependent optical responses in controllably grown WS₂ vertical homojunctions. Chem Mater, 2020, 32, 9721 doi: 10.1021/acs.chemmater.0c03413
[17]	Cao T, Wang G, Han W P, et al. Valley-selective circular dichroism of monolayer molybdenum disulphide. Nat Commun, 2012, 3, 887 doi: 10.1038/ncomms1882
[18]	Zhang T Y, Zhao S W, Wang A R, et al. Electrically and magnetically tunable valley polarization in monolayer MoSe₂ proximitized by a 2D ferromagnetic semiconductor. Adv Funct Mater, 2022, 32, 2204779 doi: 10.1002/adfm.202204779
[19]	Li X T, Liu Z D, Liu Y H, et al. All-electrical control and temperature dependence of the spin and valley Hall effect in monolayer WSe₂ transistors. ACS Appl Electron Mater, 2022, 4, 3930 doi: 10.1021/acsaelm.2c00599
[20]	Plechinger G, Nagler P, Kraus J, et al. Identification of excitons, trions and biexcitons in single-layer WS₂. Phys Status Solidi RRL, 2015, 9, 457 doi: 10.1002/pssr.201510224
[21]	Gong Y Y, Carozo V, Li H Y, et al. High flex cycle testing of CVD monolayer WS₂ TFTs on thin flexible polyimide. 2D Mater, 2016, 3, 021008 doi: 10.1088/2053-1583/3/2/021008
[22]	Wu K, Zhong H X, Guo Q B, et al. Revealing the competition between defect-trapped exciton and band-edge exciton photoluminescence in monolayer hexagonal WS₂. Adv Opt Mater, 2022, 10, 2101971 doi: 10.1002/adom.202101971
[23]	Hu Z L, Avila J, Wang X Y, et al. The role of oxygen atoms on excitons at the edges of monolayer WS₂. Nano Lett, 2019, 19, 4641 doi: 10.1021/acs.nanolett.9b01670
[24]	Kim M S, Yun S J, Lee Y J, et al. Biexciton emission from edges and grain boundaries of triangular WS₂ monolayers. ACS Nano, 2016, 10, 2399 doi: 10.1021/acsnano.5b07214
[25]	Chow P K, Jacobs-Gedrim R B, Gao J, et al. Defect-induced photoluminescence in monolayer semiconducting transition metal dichalcogenides. ACS Nano, 2015, 9, 1520 doi: 10.1021/nn5073495

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Received: 02 November 2022 Revised: 30 November 2022 Online: Accepted Manuscript: 09 December 2022Uncorrected proof: 19 December 2022Published: 14 January 2023

Article Navigation > Journal of Semiconductors > 2023 > 44(1): 012001

Siwen Zhao, Gonglei Shao, Zheng Vitto Han, Song Liu, Tongyao Zhang. Gate tunable spatial accumulation of valley-spin in chemical vapor deposition grown 40°-twisted bilayer WS2[J]. Journal of Semiconductors, 2023, 44(1): 012001. doi: 10.1088/1674-4926/44/1/012001 S W Zhao, G L Shao, Z V Han, S Liu, T Y Zhang. Gate tunable spatial accumulation of valley-spin in chemical vapor deposition grown 40°-twisted bilayer WS2[J]. J. Semicond, 2023, 44(1): 012001. doi: 10.1088/1674-4926/44/1/012001Export: BibTex EndNote

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S W Zhao, G L Shao, Z V Han, S Liu, T Y Zhang. Gate tunable spatial accumulation of valley-spin in chemical vapor deposition grown 40°-twisted bilayer WS₂[J]. J. Semicond, 2023, 44(1): 012001. doi: 10.1088/1674-4926/44/1/012001

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Gate tunable spatial accumulation of valley-spin in chemical vapor deposition grown 40°-twisted bilayer WS₂

doi: 10.1088/1674-4926/44/1/012001

1.
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110010, China
2.
Institute of Chemical Biology and Nanomedicine, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
3.
State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan 030006, China
4.
Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China

More Information

Author Bio:
Siwen Zhao received his BS degree from Shandong University and then finished his Ph.D. degree from the Department of Physics in the University of Science and Technology of China. He held a position of postdoctoral fellow in Shenzhen University from 2019 to 2022. Currently, he is working as a Research Associate in the Institute of metal research, Chinese Academy of Sciences. His recent research interests focus on the electronic transport properties and potential applications of nanometer-scale devices based on novel 2D materials and their heterostructures

Song Liu is a full Professor at the College of Chemistry and Chemical Engineering, Hunan University. He received his BS degree from Nankai University and then finished his Ph.D. degree from Peking University. After that he worked at Case Western Reserve University and National University of Singapore as postdoctoral fellow. His research interests focus on the low dimensional materials and functional devices, as well as the applications in energy and biosensors

Tongyao Zhang is a lecturer at the Institute of opto-electronics, Shanxi University. He received his BS degree and Ph.D. degree from Shanxi University. He mainly focuses on low-temperature microscopic spectroscopy of atomically thin van der Waals heterostructures by optical probe and optical manipulation
Corresponding author: liusong@hnu.edu.cn; tongyao_zhang@sxu.edu.cn
Received Date: 2022-11-02
Revised Date: 2022-11-30

Available Online: 2022-12-09

Abstract

Abstract

The emerging two-dimensional materials, particularly transition metal dichalcogenides (TMDs), are known to exhibit valley degree of freedom with long valley lifetime, which hold great promises in the implementation of valleytronic devices. Especially, light–valley interactions have attracted attentions in these systems, as the electrical generation of valley magnetization can be readily achieved — a rather different route toward magnetoelectric (ME) effect as compared to that from conventional electron spins. However, so far, the moiré patterns constructed with twisted bilayer TMDs remain largely unexplored in regard of their valley spin polarizations, even though the symmetry might be distinct from the AB stacked bilayer TMDs. Here, we study the valley Hall effect (VHE) in 40°-twisted chemical vapor deposition (CVD) grown WS₂ moiré transistors, using optical Kerr rotation measurements at 20 K. We observe a clear gate tunable spatial distribution of the valley carrier imbalance induced by the VHE when a current is exerted in the system.
- transition metal dichalcogenides,
- valleytronic devices,
- light–valley interactions,
- valley Hall effect

Supplementary materials to this article can be found online at https://doi.org/10.1088/1674-4926/44/1/012001.

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References

[1]	Zhao S W, Li X X, Dong B J, et al. Valley manipulation in monolayer transition metal dichalcogenides and their hybrid systems: Status and challenges. Rep Prog Phys, 2021, 84, 026401 doi: 10.1088/1361-6633/abdb98
[2]	Mak K F, Xiao D, Shan J. Light–valley interactions in 2D semiconductors. Nat Photonics, 2018, 12, 451 doi: 10.1038/s41566-018-0204-6
[3]	Seyler K L, Zhong D, Huang B, et al. Valley manipulation by optically tuning the magnetic proximity effect in WSe₂/CrI₃ heterostructures. Nano Lett, 2018, 18, 3823 doi: 10.1021/acs.nanolett.8b01105
[4]	Ciarrocchi A, Unuchek D, Avsar A, et al. Polarization switching and electrical control of interlayer excitons in two-dimensional van der Waals heterostructures. Nat Photonics, 2019, 13, 131 doi: 10.1038/s41566-018-0325-y
[5]	Li L F, Shao L, Liu X W, et al. Room-temperature valleytronic transistor. Nat Nanotechnol, 2020, 15, 743 doi: 10.1038/s41565-020-0727-0
[6]	Lee J, Mak K F, Shan J. Electrical control of the valley Hall effect in bilayer MoS₂ transistors. Nat Nanotechnol, 2016, 11, 421 doi: 10.1038/nnano.2015.337
[7]	Wu Z F, Zhou B T, Cai X B, et al. Intrinsic valley Hall transport in atomically thin MoS₂. Nat Commun, 2019, 10, 611 doi: 10.1038/s41467-019-08629-9
[8]	Barré E, Incorvia J A C, Kim S H, et al. Spatial separation of carrier spin by the valley Hall effect in monolayer WSe₂ transistors. Nano Lett, 2019, 19, 770 doi: 10.1021/acs.nanolett.8b03838
[9]	Lee J, Wang Z F, Xie H C, et al. Valley magnetoelectricity in single-layer MoS₂. Nat Mater, 2017, 16, 887 doi: 10.1038/nmat4931
[10]	Vitale S A, Nezich D, Varghese J O, et al. Valleytronics: Valleytronics: Opportunities, challenges, and paths forward (Small 38/2018). Small, 2018, 14, 1870172 doi: 10.1002/smll.201870172
[11]	Chen X Z, Shi S Y, Shi G Y, et al. Observation of the antiferromagnetic spin Hall effect. Nat Mater, 2021, 20, 800 doi: 10.1038/s41563-021-00946-z
[12]	Jungwirth T, Wunderlich J, Olejník K. Spin Hall effect devices. Nat Mater, 2012, 11, 382 doi: 10.1038/nmat3279
[13]	Wang L, Shih E M, Ghiotto A, et al. Correlated electronic phases in twisted bilayer transition metal dichalcogenides. Nat Mater, 2020, 19, 861 doi: 10.1038/s41563-020-0708-6
[14]	Li E, Hu J X, Feng X M, et al. Lattice reconstruction induced multiple ultra-flat bands in twisted bilayer WSe₂. Nat Commun, 2021, 12, 5601 doi: 10.1038/s41467-021-25924-6
[15]	Pacchioni G. Valleytronics with a twist. Nat Rev Mater, 2020, 5, 480 doi: 10.1038/s41578-020-0220-2
[16]	Shao G L, Xue X X, Liu X, et al. Twist angle-dependent optical responses in controllably grown WS₂ vertical homojunctions. Chem Mater, 2020, 32, 9721 doi: 10.1021/acs.chemmater.0c03413
[17]	Cao T, Wang G, Han W P, et al. Valley-selective circular dichroism of monolayer molybdenum disulphide. Nat Commun, 2012, 3, 887 doi: 10.1038/ncomms1882
[18]	Zhang T Y, Zhao S W, Wang A R, et al. Electrically and magnetically tunable valley polarization in monolayer MoSe₂ proximitized by a 2D ferromagnetic semiconductor. Adv Funct Mater, 2022, 32, 2204779 doi: 10.1002/adfm.202204779
[19]	Li X T, Liu Z D, Liu Y H, et al. All-electrical control and temperature dependence of the spin and valley Hall effect in monolayer WSe₂ transistors. ACS Appl Electron Mater, 2022, 4, 3930 doi: 10.1021/acsaelm.2c00599
[20]	Plechinger G, Nagler P, Kraus J, et al. Identification of excitons, trions and biexcitons in single-layer WS₂. Phys Status Solidi RRL, 2015, 9, 457 doi: 10.1002/pssr.201510224
[21]	Gong Y Y, Carozo V, Li H Y, et al. High flex cycle testing of CVD monolayer WS₂ TFTs on thin flexible polyimide. 2D Mater, 2016, 3, 021008 doi: 10.1088/2053-1583/3/2/021008
[22]	Wu K, Zhong H X, Guo Q B, et al. Revealing the competition between defect-trapped exciton and band-edge exciton photoluminescence in monolayer hexagonal WS₂. Adv Opt Mater, 2022, 10, 2101971 doi: 10.1002/adom.202101971
[23]	Hu Z L, Avila J, Wang X Y, et al. The role of oxygen atoms on excitons at the edges of monolayer WS₂. Nano Lett, 2019, 19, 4641 doi: 10.1021/acs.nanolett.9b01670
[24]	Kim M S, Yun S J, Lee Y J, et al. Biexciton emission from edges and grain boundaries of triangular WS₂ monolayers. ACS Nano, 2016, 10, 2399 doi: 10.1021/acsnano.5b07214
[25]	Chow P K, Jacobs-Gedrim R B, Gao J, et al. Defect-induced photoluminescence in monolayer semiconducting transition metal dichalcogenides. ACS Nano, 2015, 9, 1520 doi: 10.1021/nn5073495

Gate tunable spatial accumulation of valley-spin in chemical vapor deposition grown 40°-twisted bilayer WS₂

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Gate tunable spatial accumulation of valley-spin in chemical vapor deposition grown 40°-twisted bilayer WS₂

Gate tunable spatial accumulation of valley-spin in chemical vapor deposition grown 40°-twisted bilayer WS₂