75 GHz germanium waveguide photodetector with 64 Gbps data rates utilizing an inductive-gain-peaking technique

Xiuli Li; Yupeng Zhu; Zhi Liu; Linzhi Peng; Xiangquan Liu; Chaoqun Niu; Jun Zheng; Yuhua Zuo; Buwen Cheng

doi:10.1088/1674-4926/44/1/012301

J. Semicond. > 2023, Volume 44 > Issue 1 > 012301, doi: 10.1088/1674-4926/44/1/012301

ARTICLES

75 GHz germanium waveguide photodetector with 64 Gbps data rates utilizing an inductive-gain-peaking technique

Xiuli Li^{1, 2, X}, Yupeng Zhu^{1, 2, X}, Zhi Liu^{1, 2,}, Linzhi Peng^{1, 2}, Xiangquan Liu^{1, 2}, Chaoqun Niu^{1, 2}, Jun Zheng^{1, 2}, Yuhua Zuo^{1, 2} and Buwen Cheng^{1, 2}

+ Author Affiliations

Corresponding author: Zhi Liu, zhiliu@semi.ac.cn

Abstract:

High-performance germanium (Ge) waveguide photodetectors are designed and fabricated utilizing the inductive-gain-peaking technique. With the appropriate integrated inductors, the 3-dB bandwidth of photodetectors is significantly improved owing to the inductive-gain-peaking effect without any compromises to the dark current and optical responsivity. Measured 3-dB bandwidth up to 75 GHz is realized and clear open eye diagrams at 64 Gbps are observed. In this work, the relationship between the frequency response and large signal transmission characteristics on the integrated inductors of Ge waveguide photodetectors is investigated, which indicates the high-speed performance of photodetectors using the inductive-gain-peaking technique.

Key words: germanium, photodetectors, inductive-gain-peaking, optical interconnection

References

[1]	Marpaung D, Yao J P, Capmany J. Integrated microwave photonics. Nat Photonics, 2019, 13, 80 doi: 10.1038/s41566-018-0310-5
[2]	Zhou D, Sun C L, Lai Y X, et al. Integrated silicon multifunctional mode-division multiplexing system. Opt Express, 2019, 27, 10798 doi: 10.1364/OE.27.010798
[3]	Shi Y C, Zhang Y, Wan Y T, et al. Silicon photonics for high-capacity data communications. Photonics Res, 2022, 10, A106 doi: 10.1364/PRJ.456772
[4]	Salamin Y, Ma P, Baeuerle B, et al. 100 GHz plasmonic photodetector. ACS Photonics, 2018, 5, 3291 doi: 10.1021/acsphotonics.8b00525
[5]	Liu Z, Yang F, Wu W Z, et al. 48 GHz high-performance Ge-on-SOI photodetector with zero-bias 40 Gbps grown by selective epitaxial growth. J Lightwave Technol, 2017, 35, 5306 doi: 10.1109/JLT.2017.2766266
[6]	Vivien L, Marris-Morini D, Fédéli J-M, et al. Metal-semiconductor-metal Ge photodetectors integrated in silicon waveguides. Appl Phy Lett, 2008, 92, 151114 doi: 10.1063/1.2909590
[7]	DeRose C T, Trotter D C, Zortman W A, et al. Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current. Opt Express, 2011, 19, 24897 doi: 10.1364/OE.19.024897
[8]	Zhu Y P, Liu Z, Niu C Q, et al. High-speed and high-power germanium photodetector based on a trapezoidal absorber. Opt Lett, 2022, 47, 3263 doi: 10.1364/OL.461673
[9]	Cea M, Orden D, Fini J, et al. High-speed, zero-biased silicon-germanium photodetector. APL Photonics, 2021, 6, 041302 doi: 10.1063/5.0047037
[10]	Chen H, Verheyen P, De Heyn P, et al. –1 V bias 67 GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond. Opt Express, 2016, 24, 4622 doi: 10.1364/OE.24.004622
[11]	Lischke S, Knoll D, Mai C, et al. High bandwidth, high responsivity waveguide-coupled germanium p-i-n photodiode. Opt Express, 2015, 23, 27213 doi: 10.1364/OE.23.027213
[12]	Going R, Seok T J, Loo J, et al. Germanium wrap-around photodetectors on silicon photonics. Opt Express, 2015, 23, 11975 doi: 10.1364/OE.23.011975
[13]	Lischke S, Peczek A, Morgan J S, et al. Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz. Nat Photonics, 2021, 15, 925 doi: 10.1038/s41566-021-00893-w
[14]	Hu X, Wu D Y, Zhang H G, et al. High-speed and high-power germanium photodetector with a lateral silicon nitride waveguide. Photonics Res, 2021, 9, 749 doi: 10.1364/PRJ.417601
[15]	Yin T, Cohen R, Morse M M, et al. 31 GHz Ge n-i-p waveguide photodetectors on silicon-on-insulator substrate. Opt Express, 2007, 15, 13965 doi: 10.1364/OE.15.013965
[16]	Liao S R, Feng N N, Feng D Z, et al. 36 GHz submicron silicon waveguide germanium photodetector. Opt Express, 2011, 19, 10967 doi: 10.1364/OE.19.010967
[17]	Vivien L, Osmond J, Fédéli J M, et al. 42 GHz p. i. n germanium photodetector integrated in a silicon-on-insulator waveguide. Opt Express, 2009, 17, 6252 doi: 10.1364/OE.17.006252
[18]	Gould M, Baehr-Jones T, Ding R, et al. Bandwidth enhancement of waveguide-coupled photodetectors with inductive gain peaking. Opt Express, 2012, 20, 7101 doi: 10.1364/OE.20.007101
[19]	Novack A, Gould M, Yang Y S, et al. Germanium photodetector with 60 GHz bandwidth using inductive gain peaking. Opt Express, 2013, 21, 28387 doi: 10.1364/OE.21.028387
[20]	Wu D Y, Hu X, Li W Z, et al. 62 GHz germanium photodetector with inductive gain peaking electrode for photonic receiving beyond 100 Gbaud. J Semicond, 2021, 42, 020502 doi: 10.1088/1674-4926/42/2/020502
[21]	Shi Y, Zhou D, Yu Y, et al. 80 GHz germanium waveguide photodiode enabled by parasitic parameter engineering. Photonics Res, 2021, 9, 605 doi: 10.1364/PRJ.416887
[22]	Chen G Y, Yu Y, Deng S P, et al. Bandwidth improvement for germanium photodetector using wire bonding technology. Opt Express, 2015, 23, 25700 doi: 10.1364/OE.23.025700
[23]	Sze S M, Ng K K. Physics of semiconductor devices. Berlin Wiley-Interscience, 2006
[24]	Li W Z, Zhang H G, Hu X, et al. 100 Gbit/s co-designed optical receiver with hybrid integration. Opt Express, 2021, 29, 14304 doi: 10.1364/OE.421980

Fig. 1. (Color online) Equivalent circuit of Ge waveguide photodetector (a) without and (b) with integrated inductor.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) (a) Cross section of the Ge waveguide photodetector. (b) Microscopic image of the device. (c) Microscopic image of the standalone inductors (L₁, L₂, L₃, L₄, and L₅).

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) (a) Equivalent circuit of the extracted parameters of inductors. (b–f) Fitting curves of the standalone inductors (L₁, L₂, L₃, L₄, and L₅).

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) (a) Typical current–voltage characteristics of the Ge waveguide photodetector with and without incident light. (b) Dark current characteristics of Ge waveguide photodetectors without and with integrated inductors. Inset shows the dark current and responsivity of these photodetectors.

DownLoad: Full-Size Img PowerPoint

Fig. 5. (Color online) Frequency responses of Ge waveguide photodetectors with and without integrated inductors.

DownLoad: Full-Size Img PowerPoint

Fig. 6. (Color online) (a) Simulated frequency response of the photodetector without and with integrated inductors. (b) Simulated 3-dB bandwidth and peak values.

DownLoad: Full-Size Img PowerPoint

Fig. 7. (Color online) Eye diagrams of Ge waveguide photodetectors with and without integrated inductors at 50, 55, 60, and 64 Gbps.

DownLoad: Full-Size Img PowerPoint

Fig. 8. (Color online) Measured signal-to-noise ratio (SNR) and eye amplitude of the eye diagram at 50 and 64 Gbps.

DownLoad: Full-Size Img PowerPoint

Table 1. Parameters of the inductors (L₁, L₂, L₃, L₄ and L₅).

Parameter	R_pd (Ω)	C_j (fF)	R_load (Ω)	C_p (fF)	L_ind (pH)	R_ind (Ω)	C_ind (fF)	f_3dB (GHz)
PD without	110	15.25	50	17	N/A	N/A	N/A	28
PD with L₁					240	2.5	7	>75
PD with L₂					290	3.2	7	75
PD with L₃					350	4.0	8	68
PD with L₄					410	4.8	8	62
PD with L₅					450	5.0	9	58

DownLoad: CSV

Table 2. Performance summary of high-speed silicon-based Ge photodetectors with integrated inductances.

Type	Dark current (nA)	Responsivity (A/W)	Bandwidth (GHz)	Year
Vertical	3000	0.75	60	2013^[19]
Vertical	600	0.85	60	2015^[22]
Vertical	46	0.80	62	2021^[20]
Vertical	10	0.75	36	2021^[24]
Vertical	6.4	0.89	80*	2021^[21]
Vertical	35	0.81	>75	This work
* The bandwidth of 80 GHz in the reference is the derived value of fit, not the measured value.

DownLoad: CSV

[1]	Marpaung D, Yao J P, Capmany J. Integrated microwave photonics. Nat Photonics, 2019, 13, 80 doi: 10.1038/s41566-018-0310-5
[2]	Zhou D, Sun C L, Lai Y X, et al. Integrated silicon multifunctional mode-division multiplexing system. Opt Express, 2019, 27, 10798 doi: 10.1364/OE.27.010798
[3]	Shi Y C, Zhang Y, Wan Y T, et al. Silicon photonics for high-capacity data communications. Photonics Res, 2022, 10, A106 doi: 10.1364/PRJ.456772
[4]	Salamin Y, Ma P, Baeuerle B, et al. 100 GHz plasmonic photodetector. ACS Photonics, 2018, 5, 3291 doi: 10.1021/acsphotonics.8b00525
[5]	Liu Z, Yang F, Wu W Z, et al. 48 GHz high-performance Ge-on-SOI photodetector with zero-bias 40 Gbps grown by selective epitaxial growth. J Lightwave Technol, 2017, 35, 5306 doi: 10.1109/JLT.2017.2766266
[6]	Vivien L, Marris-Morini D, Fédéli J-M, et al. Metal-semiconductor-metal Ge photodetectors integrated in silicon waveguides. Appl Phy Lett, 2008, 92, 151114 doi: 10.1063/1.2909590
[7]	DeRose C T, Trotter D C, Zortman W A, et al. Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current. Opt Express, 2011, 19, 24897 doi: 10.1364/OE.19.024897
[8]	Zhu Y P, Liu Z, Niu C Q, et al. High-speed and high-power germanium photodetector based on a trapezoidal absorber. Opt Lett, 2022, 47, 3263 doi: 10.1364/OL.461673
[9]	Cea M, Orden D, Fini J, et al. High-speed, zero-biased silicon-germanium photodetector. APL Photonics, 2021, 6, 041302 doi: 10.1063/5.0047037
[10]	Chen H, Verheyen P, De Heyn P, et al. –1 V bias 67 GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond. Opt Express, 2016, 24, 4622 doi: 10.1364/OE.24.004622
[11]	Lischke S, Knoll D, Mai C, et al. High bandwidth, high responsivity waveguide-coupled germanium p-i-n photodiode. Opt Express, 2015, 23, 27213 doi: 10.1364/OE.23.027213
[12]	Going R, Seok T J, Loo J, et al. Germanium wrap-around photodetectors on silicon photonics. Opt Express, 2015, 23, 11975 doi: 10.1364/OE.23.011975
[13]	Lischke S, Peczek A, Morgan J S, et al. Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz. Nat Photonics, 2021, 15, 925 doi: 10.1038/s41566-021-00893-w
[14]	Hu X, Wu D Y, Zhang H G, et al. High-speed and high-power germanium photodetector with a lateral silicon nitride waveguide. Photonics Res, 2021, 9, 749 doi: 10.1364/PRJ.417601
[15]	Yin T, Cohen R, Morse M M, et al. 31 GHz Ge n-i-p waveguide photodetectors on silicon-on-insulator substrate. Opt Express, 2007, 15, 13965 doi: 10.1364/OE.15.013965
[16]	Liao S R, Feng N N, Feng D Z, et al. 36 GHz submicron silicon waveguide germanium photodetector. Opt Express, 2011, 19, 10967 doi: 10.1364/OE.19.010967
[17]	Vivien L, Osmond J, Fédéli J M, et al. 42 GHz p. i. n germanium photodetector integrated in a silicon-on-insulator waveguide. Opt Express, 2009, 17, 6252 doi: 10.1364/OE.17.006252
[18]	Gould M, Baehr-Jones T, Ding R, et al. Bandwidth enhancement of waveguide-coupled photodetectors with inductive gain peaking. Opt Express, 2012, 20, 7101 doi: 10.1364/OE.20.007101
[19]	Novack A, Gould M, Yang Y S, et al. Germanium photodetector with 60 GHz bandwidth using inductive gain peaking. Opt Express, 2013, 21, 28387 doi: 10.1364/OE.21.028387
[20]	Wu D Y, Hu X, Li W Z, et al. 62 GHz germanium photodetector with inductive gain peaking electrode for photonic receiving beyond 100 Gbaud. J Semicond, 2021, 42, 020502 doi: 10.1088/1674-4926/42/2/020502
[21]	Shi Y, Zhou D, Yu Y, et al. 80 GHz germanium waveguide photodiode enabled by parasitic parameter engineering. Photonics Res, 2021, 9, 605 doi: 10.1364/PRJ.416887
[22]	Chen G Y, Yu Y, Deng S P, et al. Bandwidth improvement for germanium photodetector using wire bonding technology. Opt Express, 2015, 23, 25700 doi: 10.1364/OE.23.025700
[23]	Sze S M, Ng K K. Physics of semiconductor devices. Berlin Wiley-Interscience, 2006
[24]	Li W Z, Zhang H G, Hu X, et al. 100 Gbit/s co-designed optical receiver with hybrid integration. Opt Express, 2021, 29, 14304 doi: 10.1364/OE.421980

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Received: 14 September 2022 Revised: 27 September 2022 Online: Accepted Manuscript: 19 October 2022Uncorrected proof: 21 October 2022Published: 14 January 2023

Article Navigation > Journal of Semiconductors > 2023 > 44(1): 012301

Xiuli Li, Yupeng Zhu, Zhi Liu, Linzhi Peng, Xiangquan Liu, Chaoqun Niu, Jun Zheng, Yuhua Zuo, Buwen Cheng. 75 GHz germanium waveguide photodetector with 64 Gbps data rates utilizing an inductive-gain-peaking technique[J]. Journal of Semiconductors, 2023, 44(1): 012301. doi: 10.1088/1674-4926/44/1/012301 X L Li, Y P Zhu, Z Liu, L Z Peng, X Q Liu, C Q Niu, J Zheng, Y H Zuo, B W Cheng. 75 GHz germanium waveguide photodetector with 64 Gbps data rates utilizing an inductive-gain-peaking technique[J]. J. Semicond, 2023, 44(1): 012301. doi: 10.1088/1674-4926/44/1/012301Export: BibTex EndNote

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X L Li, Y P Zhu, Z Liu, L Z Peng, X Q Liu, C Q Niu, J Zheng, Y H Zuo, B W Cheng. 75 GHz germanium waveguide photodetector with 64 Gbps data rates utilizing an inductive-gain-peaking technique[J]. J. Semicond, 2023, 44(1): 012301. doi: 10.1088/1674-4926/44/1/012301

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75 GHz germanium waveguide photodetector with 64 Gbps data rates utilizing an inductive-gain-peaking technique

doi: 10.1088/1674-4926/44/1/012301

Xiuli Li^{1, 2, X},
Yupeng Zhu^{1, 2, X},
Zhi Liu^{1, 2,},
Linzhi Peng^{1, 2},
Xiangquan Liu^{1, 2},
Chaoqun Niu^{1, 2},
Jun Zheng^{1, 2},
Yuhua Zuo^{1, 2},
Buwen Cheng^{1, 2}

1.
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

More Information

Author Bio:
Xiuli Li received the Ph.D. degree from Institute of Semiconductors, Chinese Academy of Sciences, in 2020. Her research interests include high speed and high power silicon-based photodetector

Yupeng Zhu received the B.S. degree from the East China University of Science and Technology, Shanghai, China, in 2020. He is currently working toward the Ph.D. degree at the Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China. His research interests include high-speed silicon-based photodetectors and modulators

Zhi Liu received the Ph.D. degree from Institute of Semiconductor, Chinese Academy of Sciences, in 2014. Since 2014, he has been with the Institute of Semiconductors, Chinese Academy of Sciences. His research interests include silicon-based group IV material growth and silicon photonics
Corresponding author: zhiliu@semi.ac.cn
Received Date: 2022-09-14
Revised Date: 2022-09-27

Available Online: 2022-10-19

Abstract

Abstract

High-performance germanium (Ge) waveguide photodetectors are designed and fabricated utilizing the inductive-gain-peaking technique. With the appropriate integrated inductors, the 3-dB bandwidth of photodetectors is significantly improved owing to the inductive-gain-peaking effect without any compromises to the dark current and optical responsivity. Measured 3-dB bandwidth up to 75 GHz is realized and clear open eye diagrams at 64 Gbps are observed. In this work, the relationship between the frequency response and large signal transmission characteristics on the integrated inductors of Ge waveguide photodetectors is investigated, which indicates the high-speed performance of photodetectors using the inductive-gain-peaking technique.
- germanium,
- photodetectors,
- inductive-gain-peaking,
- optical interconnection

Xiuli Li and Yupeng Zhu contributed equally to this work.

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References(24)

References

[1]	Marpaung D, Yao J P, Capmany J. Integrated microwave photonics. Nat Photonics, 2019, 13, 80 doi: 10.1038/s41566-018-0310-5
[2]	Zhou D, Sun C L, Lai Y X, et al. Integrated silicon multifunctional mode-division multiplexing system. Opt Express, 2019, 27, 10798 doi: 10.1364/OE.27.010798
[3]	Shi Y C, Zhang Y, Wan Y T, et al. Silicon photonics for high-capacity data communications. Photonics Res, 2022, 10, A106 doi: 10.1364/PRJ.456772
[4]	Salamin Y, Ma P, Baeuerle B, et al. 100 GHz plasmonic photodetector. ACS Photonics, 2018, 5, 3291 doi: 10.1021/acsphotonics.8b00525
[5]	Liu Z, Yang F, Wu W Z, et al. 48 GHz high-performance Ge-on-SOI photodetector with zero-bias 40 Gbps grown by selective epitaxial growth. J Lightwave Technol, 2017, 35, 5306 doi: 10.1109/JLT.2017.2766266
[6]	Vivien L, Marris-Morini D, Fédéli J-M, et al. Metal-semiconductor-metal Ge photodetectors integrated in silicon waveguides. Appl Phy Lett, 2008, 92, 151114 doi: 10.1063/1.2909590
[7]	DeRose C T, Trotter D C, Zortman W A, et al. Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current. Opt Express, 2011, 19, 24897 doi: 10.1364/OE.19.024897
[8]	Zhu Y P, Liu Z, Niu C Q, et al. High-speed and high-power germanium photodetector based on a trapezoidal absorber. Opt Lett, 2022, 47, 3263 doi: 10.1364/OL.461673
[9]	Cea M, Orden D, Fini J, et al. High-speed, zero-biased silicon-germanium photodetector. APL Photonics, 2021, 6, 041302 doi: 10.1063/5.0047037
[10]	Chen H, Verheyen P, De Heyn P, et al. –1 V bias 67 GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond. Opt Express, 2016, 24, 4622 doi: 10.1364/OE.24.004622
[11]	Lischke S, Knoll D, Mai C, et al. High bandwidth, high responsivity waveguide-coupled germanium p-i-n photodiode. Opt Express, 2015, 23, 27213 doi: 10.1364/OE.23.027213
[12]	Going R, Seok T J, Loo J, et al. Germanium wrap-around photodetectors on silicon photonics. Opt Express, 2015, 23, 11975 doi: 10.1364/OE.23.011975
[13]	Lischke S, Peczek A, Morgan J S, et al. Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz. Nat Photonics, 2021, 15, 925 doi: 10.1038/s41566-021-00893-w
[14]	Hu X, Wu D Y, Zhang H G, et al. High-speed and high-power germanium photodetector with a lateral silicon nitride waveguide. Photonics Res, 2021, 9, 749 doi: 10.1364/PRJ.417601
[15]	Yin T, Cohen R, Morse M M, et al. 31 GHz Ge n-i-p waveguide photodetectors on silicon-on-insulator substrate. Opt Express, 2007, 15, 13965 doi: 10.1364/OE.15.013965
[16]	Liao S R, Feng N N, Feng D Z, et al. 36 GHz submicron silicon waveguide germanium photodetector. Opt Express, 2011, 19, 10967 doi: 10.1364/OE.19.010967
[17]	Vivien L, Osmond J, Fédéli J M, et al. 42 GHz p. i. n germanium photodetector integrated in a silicon-on-insulator waveguide. Opt Express, 2009, 17, 6252 doi: 10.1364/OE.17.006252
[18]	Gould M, Baehr-Jones T, Ding R, et al. Bandwidth enhancement of waveguide-coupled photodetectors with inductive gain peaking. Opt Express, 2012, 20, 7101 doi: 10.1364/OE.20.007101
[19]	Novack A, Gould M, Yang Y S, et al. Germanium photodetector with 60 GHz bandwidth using inductive gain peaking. Opt Express, 2013, 21, 28387 doi: 10.1364/OE.21.028387
[20]	Wu D Y, Hu X, Li W Z, et al. 62 GHz germanium photodetector with inductive gain peaking electrode for photonic receiving beyond 100 Gbaud. J Semicond, 2021, 42, 020502 doi: 10.1088/1674-4926/42/2/020502
[21]	Shi Y, Zhou D, Yu Y, et al. 80 GHz germanium waveguide photodiode enabled by parasitic parameter engineering. Photonics Res, 2021, 9, 605 doi: 10.1364/PRJ.416887
[22]	Chen G Y, Yu Y, Deng S P, et al. Bandwidth improvement for germanium photodetector using wire bonding technology. Opt Express, 2015, 23, 25700 doi: 10.1364/OE.23.025700
[23]	Sze S M, Ng K K. Physics of semiconductor devices. Berlin Wiley-Interscience, 2006
[24]	Li W Z, Zhang H G, Hu X, et al. 100 Gbit/s co-designed optical receiver with hybrid integration. Opt Express, 2021, 29, 14304 doi: 10.1364/OE.421980

75 GHz germanium waveguide photodetector with 64 Gbps data rates utilizing an inductive-gain-peaking technique

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