J. Semicond. > 2023, Volume 44 > Issue 12 > 121801, doi: 10.1088/1674-4926/44/12/121801
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REVIEWS

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

Chenglin Du1, 2, Ran Ye1, 2, , Xiaolong Cai1, 2, , Xiangyang Duan1, 2, Haijun Liu2, Yu Zhang2, Gang Qiu2 and Minhan Mi3

+ Author Affiliations

 Corresponding author: Ran Ye, ye.ran@zte.com.cn; Xiaolong Cai, cai.xiaolong@zte.com.cn

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Abstract: The GaN HEMT is a potential candidate for RF applications due to the high frequency and large power handling capability. To ensure the quality of the communication signal, linearity is a key parameter during the system design. However, the GaN HEMT usually suffers from the nonlinearity problems induced by the nonlinear parasitic capacitance, transconductance, channel transconductance etc. Among them, the transconductance reduction is the main contributor for the nonlinearity and is mostly attributed to the scattering effect, the increasing resistance of access region, the self-heating effect and the trapping effects. Based on the mechanisms, device-level improvement methods of transconductance including the trapping suppression, the nanowire channel, the graded channel, the double channel, the transconductance compensation and the new material structures have been proposed recently. The features of each method are reviewed and compared to provide an overview perspective on the linearity of the GaN HEMT at the device level.

Key words: GaN HEMT, linearity improvement, transconductance reduction, transconductance compensation, nanowire channel, graded channel



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Fig. 1.  Relationship between capacitance and voltage for GaN HEMT.

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Fig. 2.  (Color online) GaN HEMT: (a) transconductance gm(VGS) curves. (b) Channel transconductance gDS(VDS) curves.

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Fig. 3.  Parasitic source and drain access resistances of GaN HEMT.

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Fig. 4.  Longitudinal electric field at the source access region for different VGS. The simulated increase in rS is plotted in the right axis[41].

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Fig. 5.  AlGaN/GaN HEMT output and transconductance characteristics at VGS = 0 V[47].

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Fig. 6.  (Color online) Pulsed gm versus VGS characteristics for the GaN HEMT with different quiescent bias point[55].

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Fig. 7.  Frequency dispersion of output current, transconductance at quiescent large signal bias point, and gate capacitance at VDS = 0 V[61].

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Fig. 8.  (Color online) Existing mechanisms of gm reduction for the GaN HEMT.

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Fig. 9.  (Color online) Schematic diagram of gate and source field plate of GaN HEMT.

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Fig. 10.  (Color online) (a) Cross section of AlGaN/GaN HEMTs with Si-rich SiN interlayer. (b) TEM of devices with Si-rich SiN interlayer[84].

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Fig. 11.  (Color online) Two-tone linearity measurement at 1 GHz with a 1-MHz spacing of the (a) proposed device and (b) conventional device. Devices are biased at VDS = 10 V near class A[85].

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Fig. 12.  (Color online) Device structure of nanowire channel HEMT[95].

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Fig. 13.  (Color online) (a) Source resistance as a function of drain current density in planar and nanowire devices. Inset: measurement setup. (b) Transfer characteristics of nanowire channel and planar device[95].

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Fig. 14.  (Color online) Schematic illustration of a GaN field-effect transistor with buried dual gates[101].

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Fig. 15.  (Color online) (a) Schematics of laterally gated device. (b) OIP3 of planar and laterally gated devices at 3−4 GHz range[102].

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Fig. 16.  (Color online) (a) Diagram of the super-lattice castellated FET structure combining a super-lattice epitaxial channel with a three-dimensional, castellated T-gate. (b) Two-tone linearity measurement at 30 GHz[103].

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Fig. 17.  (Color online) Schematic of planar nanostrip GaN HEMT[105].

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Fig. 18.  (Color online) (a) Schematic cross section of AlGaN/GaN PolFET with graded heterostructure. (b) Top: energy-band profiles. Bottom: electron distributions. Inset: schematic cross section of PolFETs and HEMTs structures[107].

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Fig. 19.  (Color online) (a) Schematic diagram for the MOCVD-grown HEMT with a graded InGaN subchannel. (b) Two-tone linearity measurements with f1 = 10 GHz and f2 = 10.01 GHz biased near Class A[111].

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Fig. 20.  (Color online) Cross-sectional schematic of the double-channel HEMT on the GaN on high-resistivity silicon[117].

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Fig. 21.  (Color online) Illustration of device-level gm-compensation-$g''_m $ for a set of five independent transistors with slight (0.2−0.3 V) offsets in threshold voltage (left). When these transistors are connected together (right), the composite $g''_m $ (black curve) is lowered[30].

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Fig. 22.  (Color online) Schematic and SEM image of the fin device. The widths of the five fin devices are all present within the single fin device[30].

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Fig. 23.  (Color online) Top-view SEM images of the fabricated device showing a planar region and a fin region under a single gate electrode[120].

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Fig. 24.  (Color online) (a) TRG-HEMT structure diagram. (b) Cross section view of the TRG-HEMT along the gate width. (c) Cross section view of the TRG-HEMT along the gate length[122].

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Fig. 25.  (Color online) Transfer characteristics of the AlGaN/GaN MIS-HEMTs with 20 nm SiN and 60 nm PZT at VDS = 10 V[123].

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Fig. 26.  (Color online) Schematic cross section of the AlGaN/GaN HEMT with a dual-gate structure[129].

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Fig. 27.  (Color online) Cross-sectional view of dual gate ferroelectric GaN HEMT[130].

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Fig. 28.  (Color online) Reported GVS and peak gm of recent improvement methods for the GaN HEMT.

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Fig. 29.  (Color online) Reported results of two-tone linearity measurement of recent improvement methods for the GaN HEMT.

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Table 1.   Features of reported improvement methods for nonlinear gm.

Types Mechanisms Challenges
Trapping suppression Reduce the electric field;
eliminate the sources of the traps;
keep the 2DEG from the traps		 Mostly have no ability to further improve
the GVS
Nanowire channel (fin structure/tri-gate) Effectively suppress the increasing of rS due to the large current drivability Extra parasitic gate capacitance;
loss of the output current;
etching damage risk
Graded channel (PolFET with 3DEG) Maintain the stable electron volume to suppress scattering Low peak gm;
complex epitaxy process of the graded channel
Double channel Reduce perpendicular electric field;
electron compensation between double channel		 Multiple epitaxy of the double channel
gm compensation Different gm compensated with each other Precise design for threshold voltage;
hard process control for stable threshold
Ferroelectric dielectric/N-polar hetero-structure Nonlinear polarization effect of PZT / improvement of electron confinement Tough epitaxy growth of N-polar
Double gate Alleviate the electric field Low peak gm
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    Received: 13 April 2023 Revised: 31 May 2023 Online: Accepted Manuscript: 13 October 2023Uncorrected proof: 22 November 2023Published: 10 December 2023

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      Article Navigation >  Journal of Semiconductors  > 2023  >  44(12): 121801
      Chenglin Du, Ran Ye, Xiaolong Cai, Xiangyang Duan, Haijun Liu, Yu Zhang, Gang Qiu, Minhan Mi. A review on GaN HEMTs: nonlinear mechanisms and improvement methods[J]. Journal of Semiconductors, 2023, 44(12): 121801. doi: 10.1088/1674-4926/44/12/121801 C L Du, R Ye, X L Cai, X Y Duan, H J Liu, Y Zhang, G Qiu, M H Mi. A review on GaN HEMTs: nonlinear mechanisms and improvement methods[J]. J. Semicond, 2023, 44(12): 121801. doi: 10.1088/1674-4926/44/12/121801Export: BibTex EndNote
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      Chenglin Du, Ran Ye, Xiaolong Cai, Xiangyang Duan, Haijun Liu, Yu Zhang, Gang Qiu, Minhan Mi. A review on GaN HEMTs: nonlinear mechanisms and improvement methods[J]. Journal of Semiconductors, 2023, 44(12): 121801. doi: 10.1088/1674-4926/44/12/121801

      C L Du, R Ye, X L Cai, X Y Duan, H J Liu, Y Zhang, G Qiu, M H Mi. A review on GaN HEMTs: nonlinear mechanisms and improvement methods[J]. J. Semicond, 2023, 44(12): 121801. doi: 10.1088/1674-4926/44/12/121801
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      A review on GaN HEMTs: nonlinear mechanisms and improvement methods

      doi: 10.1088/1674-4926/44/12/121801
      • 1.

        State Key Laboratory of Mobile Network and Mobile Multimedia Technology, Shenzhen 518055, China

      • 2.

        Wireless Product Planning Department, ZTE Corporation, Shenzhen 518055, China

      • 3.

        School of Microelectronics, Xidian University, Xi’an 710071, China

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      • Author Bio:

        Chenglin Du Chenglin Du received BS and PhD degrees from Nankai University, China, in 2014 and 2019 respectively. He is a member of the State Key Laboratory of Mobile Network and Mobile Multimedia Technology, ZTE corporation. His research focuses on radio-frequency GaN HEMTs

        Ran Ye Ran Ye received BS, MS and PhD degrees from Southeast University, China, in 2013, 2016 and 2020 respectively. He is a member of the State Key Laboratory of Mobile Network and Mobile Multimedia Technology, ZTE corporation. His research focuses on the reliability of semiconductor devices and radio-frequency GaN HEMTs

        Xiaolong Cai Xiaolong Cai received BS and MS degrees from Jiangnan University, China, in 2012 and 2015, and a PhD degree from Nanjing University, China, in 2018. He is a member of the State Key Laboratory of Mobile Network and Mobile Multimedia Technology, ZTE corporation. His research includes the SiC optoelectronic device and radio-frequency GaN HEMTs

      • Corresponding author: ye.ran@zte.com.cn; cai.xiaolong@zte.com.cn
      • Received Date: 2023-04-13
      • Revised Date: 2023-05-31
        • Available Online: 2023-10-13

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