J. Semicond. > 2023, Volume 44 > Issue 3 > 032801, doi: 10.1088/1674-4926/44/3/032801

ARTICLES

Investigation of UV photosensor properties of Al-doped SnO2 thin films deposited by sol-gel dip-coating method

Kaour Selma1, 2, Benkara Salima3, 4, , Bouabida Seddik3, Rechem Djamil1, 3 and Hadjeris Lazhar1, 2

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 Corresponding author: Benkara Salima, sali_benkara@yahoo.fr

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Abstract: Transparent conducting aluminum doped tin oxide thin films were prepared by sol-gel dip coating method with different Al concentrations and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV–Vis spectrophotometry and photoconductivity study. The variation observed in the properties of the measured films agrees with a difference in the film's thickness, which decreases when Al concentration augments. X-ray diffraction analysis reveals that all films are polycrystalline with tetragonal structure, (110) plane being the strongest diffraction peak. The crystallite size calculated by the Debye Scherrer’s formula decreases from 11.92 to 8.54 nm when Al concentration increases from 0 to 5 wt.%. AFM images showed grains uniformly distributed in the deposited films. An average transmittance greater than 80% was measured for the films and an energy gap value of about 3.9 eV was deduced from the optical analysis. Finally, the photosensitivity properties like current–voltage characteristics, ION/IOFF ratio, growth and decay time are studied and reported. Also, we have calculated the trap depth energy using the decay portion of the rise and decay curve photocurrent.

Key words: tin oxide, thin films, sol-gel, UV photodetector, photoconductivity, trap depth



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Fig. 1.  (Color online) The schematic drawing of pure and Al-doped SnO2 thin films produced with a sol-gel dip coating method.

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Fig. 2.  (Color online) Experimental setup of UV photo-detection.

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Fig. 3.  (Color online) XRD patterns of undoped and Al-doped SnO2 thin films.

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Fig. 4.  (Color online) 3D surface morphologies of SnO2 thin films with various Al doping concentrations.

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Fig. 5.  (Color online) Optical transmittance spectra of undoped and Al-doped SnO2 thin films.

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Fig. 6.  (Color online) Plots $ {\left(\alpha h\upsilon \right)}^{2} $ versus $h\upsilon$ of undoped and Al-doped SnO2 thin films.

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Fig. 7.  (Color online) Variation of (a) dark current and (b) photocurrent as a function of applied voltage for undoped and aluminum doped SnO2 thin films.

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Fig. 8.  (Color online) Photoconductivity rise and decay time spectra of undoped and Al-doped SnO2 thin films.

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Fig. 9.  (Color online) A schematic of the photoresponse mechanism and energy band diagram of Al:SnO2 thin films.

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Fig. 10.  (Color online) Rise and decay photoresponse curves of pure and Al-doped SnO2 thin films.

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Table 1.   XRD parameters, crystallite size, strain and RMS of undoped and Al-doped SnO2 thin films.

Sample2θ (°)Β (°)D (nm)Strain (10−3)$a$ = b (Å)c (Å)RMS (nm)Ra (nm)Da (nm)
SnO226.790.7111.923.274.7003.2035.064.2573.0
3 wt.% Al-SnO226.560.7411.403.424.7423.1952.321.7645.5
5 wt.% Al-SnO226.580.9908.544.604.7383.1612.011.6729.3
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Table 2.   The values of Texture Coefficient of undopedand Al-doped SnO2 thin films.

SampleTc(hkl) of SnO2 thin films
(110)(101)(200)(210)
SnO21.221.170.780.83
3 wt.% Al-SnO21.410.940.860.77
5 wt.% Al-SnO21.331.120.620.91
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Table 3.   The values of photocurrent, dark current, ION/IOFF ratio, rise time constant (tr), decay time constants (td1, td2) and defect levels energy (trap depth (E1, E2)) for undoped and Al-doped SnO2 thin films.

SampleION (A)IOFF (A)ION/IOFFtr (s)td1 (s)td2 (s)E1 (eV)E2 (eV)Ref.
SnO21.22 × 10−27.75 × 10−5217.852811.3373.140.5980.64This work
3 wt.% Al-SnO23.56 × 10−41.30 × 10−6273.84155.6448.150.5800.63This work
5 wt.% Al-SnO23.03 × 10−61.95 × 10−8155.38245.3349.940.5790.63This work
Mg-ZnO films––8.4919614.3112.10.6400.70[68]
Cu/LiZnO9.6 × 10−111.20 × 10−7125076935222––[69]
SnO2 films3.2×10−111.43 × 10−944250506–––[39]
DownLoad: CSV
[1]
Al-Zuhairi O, Shuhaimi A, Nayan N, et al. Non-polar gallium nitride for photodetection applications: A systematic review. Coatings, 2022, 12, 275 doi: 10.3390/coatings12020275
[2]
İlhan M, Koc M M, Coskun B, et al. Structural and optoelectronic characterization of Cu2CoSnS4 quaternary functional photodetectors. Optik, 2020, 212, 164724 doi: 10.1016/j.ijleo.2020.164724
[3]
Mishra S K, Bayan S, Shankar R, et al. Efficient UV photosensitive and photoluminescence properties of sol-gel derived Sn doped ZnO nanostructures. Sens Actuat A, 2014, 211, 8 doi: 10.1016/j.sna.2014.02.020
[4]
Liu H Y, Lin W X, Sun W Q, et al. A study of ultrasonic spray pyrolysis deposited rutile-TiO2-based metal-semiconductor-metal ultraviolet photodetector. Mater Sci Semicond Process, 2017, 57, 90 doi: 10.1016/j.mssp.2016.10.005
[5]
Khayatian A, Kashi M A, Azimrad R, et al. Effect of annealing process in tuning of defects in ZnO nanorods and their application in UV photodetectors. Optik, 2016, 127, 4675 doi: 10.1016/j.ijleo.2016.01.177
[6]
Oshima T, Okuno T, Fujita S. UV-B sensor based on a SnO2 thin film. Jpn J Appl Phys, 2009, 48, 120207 doi: 10.1143/JJAP.48.120207
[7]
Leem J W, Yu J S. Physical properties of electrically conductive Sb-doped SnO2 transparent electrodes by thermal annealing dependent structural changes for photovoltaic applications. Mater Sci Eng B, 2011, 176, 1207 doi: 10.1016/j.mseb.2011.06.015
[8]
Song P, Wang Q, Yang Z X. Preparation, characterization and acetone sensing properties of Ce-doped SnO2 hollow spheres. Sens Actuat B, 2012, 173, 839 doi: 10.1016/j.snb.2012.07.115
[9]
Khan A F, Mehmood M, Aslam M, et al. Characteristics of electron beam evaporated nanocrystalline SnO2 thin films annealed in air. Appl Surf Sci, 2010, 256, 2252 doi: 10.1016/j.apsusc.2009.10.047
[10]
Kumari N, Ghosh A, Tewari S, et al. Synthesis, structural and optical properties of Al doped SnO2 nanoparticles. Indian J Phys, 2014, 88, 65 doi: 10.1007/s12648-013-0387-0
[11]
Sivasankar Reddy A, Figueiredo N M, Cavaleiro A. Nanocrystalline Au:Ag:SnO2 films prepared by pulsed magnetron sputtering. J Phys Chem Solids, 2013, 74, 825 doi: 10.1016/j.jpcs.2013.01.023
[12]
Dien E, Laurent J M, Smith A, et al. Comparison of optical and electrical characteristics of SnO2-based thin films deposited by pyrosol from different tin precursors. J Eur Ceram Soc, 1999, 19, 787 doi: 10.1016/S0955-2219(98)00313-6
[13]
Tran Q P, Fang J S, Chin T S. Optical properties and boron doping-induced conduction-type change in SnO2 thin films. J Electron Mater, 2016, 45, 349 doi: 10.1007/s11664-015-4081-1
[14]
Bonu V, Das A, Amirthapandian S, et al. Photoluminescence of oxygen vacancies and hydroxyl group surface functionalized SnO2 nanoparticles. Phys Chem Chem Phys, 2015, 17, 9794 doi: 10.1039/C5CP00060B
[15]
Moazzami K, Murphy T E, Phillips J D, et al. Sub-bandgap photoconductivity in ZnO epilayers and extraction of trap density spectra. Semicond Sci Technol, 2006, 21, 717 doi: 10.1088/0268-1242/21/6/001
[16]
Brinzari V. Mechanism of band gap persistent photoconductivity (PPC) in SnO2 nanoscrystalline films: Nature of local states, simulation of PPC and comparison with experiment. Appl Surf Sci, 2017, 411, 437 doi: 10.1016/j.apsusc.2017.03.209
[17]
Mishra S K, Srivastava S, Srivastava R K, et al. Photoluminescence and ultraviolet photoresponse in ZnO nanophorsphors prepared by thermal decomposition of zinc acetate. Adv Mater Lett, 2011, 2, 298 doi: 10.5185/amlett.indias.210
[18]
Mishra S K, Srivastava R K, Prakash S G, et al. Photoluminescence and photoconductive characteristics of hydrothermally synthesized ZnO nanoparticles. Opto-Electron Rev, 2010, 18, 467 doi: 10.2478/s11772-010-0037-4
[19]
Ku C J, Reyes P, Duan Z Q, et al. Mg xZn1− xO thin-film transistor-based UV photodetectorwith enhanced photoresponse. J Electron Mater, 2015, 44, 3471 doi: 10.1007/s11664-015-3697-5
[20]
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    Received: 10 September 2022 Revised: 05 November 2022 Online: Uncorrected proof: 03 January 2023Accepted Manuscript: 03 January 2023Published: 10 March 2023

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      Article Navigation >  Journal of Semiconductors  > 2023  >  44(3): 032801
      Kaour Selma, Benkara Salima, Bouabida Seddik, Rechem Djamil, Hadjeris Lazhar. Investigation of UV photosensor properties of Al-doped SnO2 thin films deposited by sol-gel dip-coating method[J]. Journal of Semiconductors, 2023, 44(3): 032801. doi: 10.1088/1674-4926/44/3/032801 K Selma, B Salima, B Seddik, R Djamil, H Lazhar. Investigation of UV photosensor properties of Al-doped SnO2 thin films deposited by sol-gel dip-coating method[J]. J. Semicond, 2023, 44(3): 032801. doi: 10.1088/1674-4926/44/3/032801Export: BibTex EndNote
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      Kaour Selma, Benkara Salima, Bouabida Seddik, Rechem Djamil, Hadjeris Lazhar. Investigation of UV photosensor properties of Al-doped SnO2 thin films deposited by sol-gel dip-coating method[J]. Journal of Semiconductors, 2023, 44(3): 032801. doi: 10.1088/1674-4926/44/3/032801

      K Selma, B Salima, B Seddik, R Djamil, H Lazhar. Investigation of UV photosensor properties of Al-doped SnO2 thin films deposited by sol-gel dip-coating method[J]. J. Semicond, 2023, 44(3): 032801. doi: 10.1088/1674-4926/44/3/032801
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      Investigation of UV photosensor properties of Al-doped SnO2 thin films deposited by sol-gel dip-coating method

      doi: 10.1088/1674-4926/44/3/032801
      • 1.

        Laboratory of Materials and Structure of Electromechanical Systems and their Reliability, Oum El Bouaghi University, Algeria

      • 2.

        Faculty of Exact Sciences and Natural and Life Sciences, Oum El Bouaghi University, Algeria

      • 3.

        Electrical Engineering Department, Oum El Bouaghi University, Algeria

      • 4.

        Laboratory of Active Components and Materials, Oum El Bouaghi University, Algeria

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      • Author Bio:

        Kaour Selma received graduate degrees and Master’s degree in physics from Guelma University, Algeria in 2013 and 2015 respectively. Now she is a PhD student in Oum El Bouaghi University. Her research interests on thin films synthesis by sol-gel and co-precipitation method and study their optical, electrical and photoconductivity properties

        Benkara Salima received the graduate engineering, Master and Doctorate of Science on Materials and components and components in electronics from Constantine University, Algeria, in 1997, 2000 and 2014 respectively. She is presently a teacher in Oum El Bouaghi University, Algeria. Her research interests on nanostructured films based on SnO2, ZnO, and TiO2

      • Corresponding author: sali_benkara@yahoo.fr
      • Received Date: 2022-09-10
      • Revised Date: 2022-11-05
        • Available Online: 2023-01-03

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