J. Semicond. > 2023, Volume 44 > Issue 4 > 040202, doi: 10.1088/1674-4926/44/4/040202
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RESEARCH HIGHLIGHTS

CMOS image sensors in ISSCC 2023

Peng Feng1, 2, Nanjian Wu1, 2, , Jian Liu1, 2 and Liyuan Liu1, 2

+ Author Affiliations

 Corresponding author: Nanjian Wu, nanjian@red.semi.ac.cn

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[1]
Guo M H, Chen S S, Gao Z, et al. A 3-wafer-stacked hybrid 15MPixel CIS + 1MPixel EVS with 4.6GEvent/s readout, in-pixel TDC and on-chip ISP and ESP function. IEEE International Solid-State Circuits Conference, 2023, 90
[2]
Kodama K, Sato Y, Yorikado Y, et al. 1.22μm 35.6Mpixel RGB hybrid event-based vision sensor with 4.88μm-pitch event pixels and up to 10K event frame rate by adaptive control on event sparsity. IEEE International Solid-State Circuits Conference, 2023, 92
[3]
Niwa A, Mochizuki F, Berner R, et al. 2.97μm-pitch event-based vision sensor with shared pixel front-end circuitry and low-noise intensity readout mode. IEEE International Solid-State Circuits Conference, 2023, 94
[4]
Chan C H, Cheng L, Deng W, et al. Trending IC design directions in 2022. J Semicond, 2022, 43, 071401 doi: 10.1088/1674-4926/43/7/071401
[5]
Liu M, Cai Z T, Zhou S H, et al. A 16.4kpixel 3.08-to-3.86THz digital real-time CMOS image sensor with 73dB dynamic range. IEEE International Solid-State Circuits Conference, 2023, 98
[6]
Jain R, Hillger P, Grzyb J, et al. A 32 × 32 pixel 0.46-to-0.75THz light-field camera SoC in 0.13μm CMOS. IEEE International Solid-State Circuits Conference, 2021, 484 doi: 10.1109/ISSCC42613.2021.9365832
[7]
Park B, Ahn B, Choi H S, et al. A 400×200 600fps 117.7dB-DR SPAD X-ray detector with seamless global shutter and time-encoded extrapolation counter. IEEE International Solid-State Circuits Conference, 2023, 100

Table 1.   Performance comparison of different types image sensor.

Ref.[1][2][3][5][7]
Sensor typeCIS + EVSCIS + EVSCIS + EVSTHz CISX-ray SPAD
Technology40 nm BSI CIS + 65 nm CMOS + 3DMIM + 40 nm CMOS90 nm BI CIS +
22 nm CMOS		90 nm BI CIS +
22 nm CMOS		180 nm
CMOS		65 nm CMOS
Resolution (pixel)1032 × 928(EVS)/
4096 × 3680(CIS)		2.08M(EVS)/
35.6M(CIS)		640 × 640128 × 128400 × 200
Pixel pitch (μm)8.8(EVS)/2.2(CIS)4.88(EVS)/1.22(CIS)2.976049.5
Frame rate (fps)18(CIS)59(CIS)60(CIS)130600
Dynamic range (dB)–67.872.273117.7
Random noise (e-)2.21.572.6––
Maximum event rate (Eps)4.6G4.56G1.41G––
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[1]
Guo M H, Chen S S, Gao Z, et al. A 3-wafer-stacked hybrid 15MPixel CIS + 1MPixel EVS with 4.6GEvent/s readout, in-pixel TDC and on-chip ISP and ESP function. IEEE International Solid-State Circuits Conference, 2023, 90
[2]
Kodama K, Sato Y, Yorikado Y, et al. 1.22μm 35.6Mpixel RGB hybrid event-based vision sensor with 4.88μm-pitch event pixels and up to 10K event frame rate by adaptive control on event sparsity. IEEE International Solid-State Circuits Conference, 2023, 92
[3]
Niwa A, Mochizuki F, Berner R, et al. 2.97μm-pitch event-based vision sensor with shared pixel front-end circuitry and low-noise intensity readout mode. IEEE International Solid-State Circuits Conference, 2023, 94
[4]
Chan C H, Cheng L, Deng W, et al. Trending IC design directions in 2022. J Semicond, 2022, 43, 071401 doi: 10.1088/1674-4926/43/7/071401
[5]
Liu M, Cai Z T, Zhou S H, et al. A 16.4kpixel 3.08-to-3.86THz digital real-time CMOS image sensor with 73dB dynamic range. IEEE International Solid-State Circuits Conference, 2023, 98
[6]
Jain R, Hillger P, Grzyb J, et al. A 32 × 32 pixel 0.46-to-0.75THz light-field camera SoC in 0.13μm CMOS. IEEE International Solid-State Circuits Conference, 2021, 484 doi: 10.1109/ISSCC42613.2021.9365832
[7]
Park B, Ahn B, Choi H S, et al. A 400×200 600fps 117.7dB-DR SPAD X-ray detector with seamless global shutter and time-encoded extrapolation counter. IEEE International Solid-State Circuits Conference, 2023, 100

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    Received: 13 March 2023 Revised: Online: Accepted Manuscript: 16 March 2023Uncorrected proof: 16 March 2023Published: 10 April 2023

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      Article Navigation >  Journal of Semiconductors  > 2023  >  44(4): 040202
      Peng Feng, Nanjian Wu, Jian Liu, Liyuan Liu. CMOS image sensors in ISSCC 2023[J]. Journal of Semiconductors, 2023, 44(4): 040202. doi: 10.1088/1674-4926/44/4/040202 P Feng, N J Wu, J Liu, L Y Liu. CMOS image sensors in ISSCC 2023[J]. J. Semicond, 2023, 44(4): 040202. doi: 10.1088/1674-4926/44/4/040202Export: BibTex EndNote
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      Peng Feng, Nanjian Wu, Jian Liu, Liyuan Liu. CMOS image sensors in ISSCC 2023[J]. Journal of Semiconductors, 2023, 44(4): 040202. doi: 10.1088/1674-4926/44/4/040202

      P Feng, N J Wu, J Liu, L Y Liu. CMOS image sensors in ISSCC 2023[J]. J. Semicond, 2023, 44(4): 040202. doi: 10.1088/1674-4926/44/4/040202
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      CMOS image sensors in ISSCC 2023

      doi: 10.1088/1674-4926/44/4/040202
      • 1.

        State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • 2.

        Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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      • Author Bio:

        Peng Feng got his B.S. degree in 2006 at Sichuan University and the Ph.D. degree in 2011 at the Institute of Semiconductors, Chinese Academy of Sciences (CAS). He is now an associate professor at the Institute of Semiconductors, CAS. His research interests include ultra-low power mixed signal/RF integrated circuits and CMOS image sensors

        Nanjian Wu received the B.S. degree in physics from Heilongjiang University, Harbin, China, in 1982, the M.S. degree in electronic engineering from Jilin University, Changchun, China, in 1985, and the D.S. degree in electronic engineering from The University of Electro-Communications, Tokyo, Japan, in 1992. Since 2000, he has been a Professor with the Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China. In 2005, as a Visiting Professor, he visited the Research Center for Integrated Quantum Electronics, Hokkaido University. Since 2009, he has been an Honorable Guest Professor with the Research Institute of Electronics, Shizuoka University, Shizuoka, Japan. His research is in the field of mixed-signal LSI and vision chip design

        Jian Liu received the B.S. degree in semiconductor physics & devices from Jilin University in 1988, the MPhil degree in physics from The University of Birmingham, United Kingdom in 1998, and the Dr. rer. nat. degree in physics from Julius Maximilian Universität Würzburg, Germany in 2003. He is a full professor in microelectronics and solid state electronics with the Institute of Semiconductors, Chinese Academy of Sciences. His current research interests include CMOS image sensors, THz detectors and metamaterials

        Liyuan Liu received the B.S. and Ph.D. degrees in electrical engineering from Electronic Engineering Department, Institute of Microelectronics, Tsinghua University, Beijing, China, in 2005 and 2010, respectively. In 2012, he joined the State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, as an Associate Professor, where he became a professor in 2018. His current research interests are high speed CMOS image sensors, SPAD based 3D image sensors, CMOS terahertz image sensors, smart processors for edge computing and design of monolithic vision chip

      • Corresponding author: nanjian@red.semi.ac.cn
      • Received Date: 2023-03-13
        Available Online: 2023-03-16

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