The room temperature ferromagnetism in highly strained two-dimensional magnetic semiconductors

Dahai Wei

doi:10.1088/1674-4926/44/4/040401

J. Semicond. > 2023, Volume 44 > Issue 4 > 040401, doi: 10.1088/1674-4926/44/4/040401

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The room temperature ferromagnetism in highly strained two-dimensional magnetic semiconductors

Dahai Wei

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Corresponding author: Dahai Wei, dhwei@semi.ac.cn

References

[1]	Gong C, Li L, Li Z, et al. Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals. Nature, 2017, 546, 265 doi: 10.1038/nature22060
[2]	Huang B, Clark G, Navarro-Moratalla E, et al. Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit. Nature, 2017, 546, 270 doi: 10.1038/nature22391
[3]	Bertolazzi S, Brivio J, Kis A. Stretching and breaking of ultrathin MoS₂. ACS Nano, 2011, 5, 9703 doi: 10.1021/nn203879f
[4]	Peng R, Xu H C, Tan S Y, et al. Tuning the band structure and superconductivity in single-layer FeSe by interface engineering. Nat Commun, 2014, 5, 5044 doi: 10.1038/ncomms6044
[5]	Zhang P, Peng X L, Qian T, et al. Observation of high-T_C superconductivity in rectangular FeSe/SrTiO₃(110) monolayers. Phys Rev B, 2016, 94, 104510 doi: 10.1103/PhysRevB.94.104510
[6]	Cocco G, Cadelano E, Colombo L. Gap opening in graphene by shear strain. Phys Rev B, 2010, 81, 241412 doi: 10.1103/PhysRevB.81.241412
[7]	Dong X J, You J Y, Gu B, et al. Strain-induced room-temperature ferromagnetic semiconductors with large anomalous Hall conductivity in two-dimensional Cr₂Ge₂Se₆. Phys Rev Appl, 2019, 12, 014020 doi: 10.1103/PhysRevApplied.12.014020
[8]	Dong X J, You J Y, Zhang Z, et al. Great enhancement of Curie temperature and magnetic anisotropy in two-dimensional van der Waals semiconductor heterostructures. Phys Rev B, 2020, 102, 144443 doi: 10.1103/PhysRevB.102.144443
[9]	Zhang Z, You J Y, Ma X Y, et al. Kagome quantum anomalous Hall effect with high Chern number and large band gap. Phys Rev B, 2021, 103, 014410 doi: 10.1103/PhysRevB.103.014410
[10]	Zhang Z, You J Y, Gu B, et al. Emergent magnetic states due to stacking and strain in the van der Waals magnetic trilayer CrI₃. Phys Rev B, 2021, 104, 174433 doi: 10.1103/PhysRevB.104.174433
[11]	O’Neill A, Rahman S, Zhang Z, et al. Enhanced room temperature ferromagnetism in highly strained 2D semiconductor Cr₂Ge₂Te₆. ACS Nano, 2023, 17, 735 doi: 10.1021/acsnano.2c10209

Fig. 1. (Color online) Temperature-dependent magnetic force microscopy (MFM) signal of curved wrinkles in the 2D Cr₂Ge₂Te₆ with (a) 1.3% strain and (b) 2.3% stain in experiment. Numerically calculated T_c and the magnetic anisotropy energy (MAE) as a function of strain for (c) monolayer and (d) bilayer Cr₂Ge₂Te₆, respectively. Adapted from Ref. [11].

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[1]	Gong C, Li L, Li Z, et al. Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals. Nature, 2017, 546, 265 doi: 10.1038/nature22060
[2]	Huang B, Clark G, Navarro-Moratalla E, et al. Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit. Nature, 2017, 546, 270 doi: 10.1038/nature22391
[3]	Bertolazzi S, Brivio J, Kis A. Stretching and breaking of ultrathin MoS₂. ACS Nano, 2011, 5, 9703 doi: 10.1021/nn203879f
[4]	Peng R, Xu H C, Tan S Y, et al. Tuning the band structure and superconductivity in single-layer FeSe by interface engineering. Nat Commun, 2014, 5, 5044 doi: 10.1038/ncomms6044
[5]	Zhang P, Peng X L, Qian T, et al. Observation of high-T_C superconductivity in rectangular FeSe/SrTiO₃(110) monolayers. Phys Rev B, 2016, 94, 104510 doi: 10.1103/PhysRevB.94.104510
[6]	Cocco G, Cadelano E, Colombo L. Gap opening in graphene by shear strain. Phys Rev B, 2010, 81, 241412 doi: 10.1103/PhysRevB.81.241412
[7]	Dong X J, You J Y, Gu B, et al. Strain-induced room-temperature ferromagnetic semiconductors with large anomalous Hall conductivity in two-dimensional Cr₂Ge₂Se₆. Phys Rev Appl, 2019, 12, 014020 doi: 10.1103/PhysRevApplied.12.014020
[8]	Dong X J, You J Y, Zhang Z, et al. Great enhancement of Curie temperature and magnetic anisotropy in two-dimensional van der Waals semiconductor heterostructures. Phys Rev B, 2020, 102, 144443 doi: 10.1103/PhysRevB.102.144443
[9]	Zhang Z, You J Y, Ma X Y, et al. Kagome quantum anomalous Hall effect with high Chern number and large band gap. Phys Rev B, 2021, 103, 014410 doi: 10.1103/PhysRevB.103.014410
[10]	Zhang Z, You J Y, Gu B, et al. Emergent magnetic states due to stacking and strain in the van der Waals magnetic trilayer CrI₃. Phys Rev B, 2021, 104, 174433 doi: 10.1103/PhysRevB.104.174433
[11]	O’Neill A, Rahman S, Zhang Z, et al. Enhanced room temperature ferromagnetism in highly strained 2D semiconductor Cr₂Ge₂Te₆. ACS Nano, 2023, 17, 735 doi: 10.1021/acsnano.2c10209