Fig. 1.
(Color online) (a) Schematic drawing of the epitaxy structure of the device. (b) Band structure of the EB and HB parts.
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Shaolong Yan, Jianliang Huang, Ting Xue, Yanhua Zhang, Wenquan Ma. Long wavelength interband cascade photodetector with type II InAs/GaSb superlattice absorber[J]. Journal of Semiconductors, 2023, 44(4): 042301. doi: 10.1088/1674-4926/44/4/042301
S L Yan, J L Huang, T Xue, Y H Zhang, W Q Ma. Long wavelength interband cascade photodetector with type II InAs/GaSb superlattice absorber[J]. J. Semicond, 2023, 44(4): 042301. doi: 10.1088/1674-4926/44/4/042301
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Long wavelength interband cascade photodetector with type II InAs/GaSb superlattice absorber
doi: 10.1088/1674-4926/44/4/042301
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Abstract
We report on a long wavelength interband cascade photodetector with type II InAs/GaSb superlattice absorber. The device is a three-stage interband cascade structure. At 77 K, the 50% cutoff wavelength of the detector is 8.48 μm and the peak photoresponse wavelength is 7.78 μm. The peak responsivity is 0.93 A/W and the detectivity D* is 1.12 × 1011 cm·Hz0.5/W for 7.78 μm at –0.20 V. The detector can operate up to about 260 K. At 260 K, the 50% cutoff wavelength is 11.52 μm, the peak responsivity is 0.78 A/W and the D* is 5.02 × 108 cm·Hz0.5/W for the peak wavelength of 10.39 μm at –2.75 V. The dark current of the device is dominated by the diffusion current under both a small bias voltage of –0.2 V and a large one of –2.75 V for the temperature range of 120 to 260 K. -
References
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