J. Semicond. > 2023, Volume 44 > Issue 5 > 053101, doi: 10.1088/1674-4926/44/5/053101
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REVIEWS

Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications

Wanwang Yang1, 2, Chenxi Yu1, 2, Haolin Li1, 2, Mengqi Fan1, 2, Xujin Song1, 2, Haili Ma1, 2, Zheng Zhou1, 2, Pengying Chang1, 3, Peng Huang1, 2, Fei Liu1, 2, Xiaoyan Liu1, 2 and Jinfeng Kang1, 2,

+ Author Affiliations

 Corresponding author: Jinfeng Kang, kangjf@pku.edu.cn

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Abstract: The finding of the robust ferroelectricity in HfO2-based thin films is fantastic from the view point of both the fundamentals and the applications. In this review article, the current research status of the future prospects for the ferroelectric HfO2-based thin films and devices are presented from fundamentals to applications. The related issues are discussed, which include: 1) The ferroelectric characteristics observed in HfO2-based films and devices associated with the factors of dopant, strain, interface, thickness, defect, fabrication condition, and more; 2) physical understanding on the observed ferroelectric behaviors by the density functional theory (DFT)-based theory calculations; 3) the characterizations of microscopic and macroscopic features by transmission electron microscopes-based and electrical properties-based techniques; 4) modeling and simulations, 5) the performance optimizations, and 6) the applications of some ferroelectric-based devices such as ferroelectric random access memory, ferroelectric-based field effect transistors, and the ferroelectric tunnel junction for the novel information processing systems.

Key words: ferroelectricity, HfO2-based thin films, physical mechanism, characterization, modeling and simulation, applications



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Fig. 1.  (Color online) Ferroelectric behaviors of HfO2 systems with different dopants. (a) P–E and C–E loop of Zr:HfO2 with increasing concentration. Pr is enhanced until the atom ratio of Hf : Zr reaches 1 : 1. For higher doping concentration antiferroelectricity emerges. (b) Polarization and coercive field for La:HfO2 with increasing La doping. A larger doping window of 12 mol% is observed for La compared to Si, Al and Gd. (a) is reprinted with permission from Ref. [20], copyright 2012 American Chemical Society. (b) is reprinted with permission from Ref. [53], copyright 2018 American Chemical Society.

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Fig. 2.  (Color online) 2Pr and o/t/m-phase fraction of (a) 5.5, (b) 10, (c) 17, (d) 25 nm HZO films annealing with different temperature. Pr is enhanced in the 400–600 °C section and the ratio of m-phase significantly increases with higher annealing temperature. Reprinted with permission from Ref. [37], copyright 2013 AIP Publishing LLC.

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Fig. 3.  (a) P–V loops and (b) GIXRD patterns for Y:HfO2 undergoing 600 °C PMA and PDA process with different doping concentration. Y:HfO2 adopting PDA still shows stable Pr and considerable o-phase fraction with doping concentration from 3.6 mol% to 5.2 mol%. But Y:HfO2 after PMA shows a larger Pr at the same Y concentration level, which reaches 24 μC/cm2 at 5.2 mol%. Reprinted with permission from Ref. [58], copyright 2011 American Institute of Physics.

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Fig. 4.  (Color online) (a) The experimental and (b) computed equilibrium phase diagrams of $ {\mathrm{H}\mathrm{f}\mathrm{O}}_{2} $. (c) The regimes in which the free energy difference between $ Pca{2}_{1} $ and $ Pmn{2}_{1} $ phases, and the equilibrium phases are small (i.e., $ < {k}_{\mathrm{B}}T/5 $). (d–h) The schematic structures of m, t, oI, oII, oIII phases of $ {\mathrm{H}\mathrm{f}\mathrm{O}}_{2} $ respectively. (a) is reprinted with permission from Ref. [124], copyright 2023 The American Ceramic Society. (b) and (c) are reprinted with permission from Ref. [14], copyright 2014 American Physical Society.

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Fig. 5.  (Color online) Thin film energies, computed via the energy model considering the interfacial energies and bulk energies, as a function of film thickness for $ \mathrm{I}\mathrm{r}/{\mathrm{H}\mathrm{f}\mathrm{O}}_{2}/\mathrm{I}\mathrm{r} $ stacks. The bulk energy of m phase is set as the zero point of bulk energies. Reprinted with permission from Ref. [131], copyright 2019 Royal Society of Chemistry.

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Fig. 6.  (Color online) The computed phase diagram of $ {\mathrm{H}\mathrm{f}\mathrm{O}}_{2} $ under the influence of electric field and in-plane stress. The red, yellow, and green colors respectively mark the regions where the m, the oI, and the oIII phase are the equilibrium state. Reprinted with permission from Ref. [132], copyright 2017 American Chemical Society.

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Fig. 7.  (Color online) Formation energy of various dopants. The dopant above the red line tends to form a substitutional defect, while the dopant below the red line tends to form an interstitial defect. The red line should be located at $ {E}_{\text{form}}^{\text{rel}}=0 $, but Falkowski et al. set it to 8.5 eV to compensate DFT (density functional theory) error and match experimental findings. Reprinted with permission from Ref. [147], copyright 2017 American Chemical Society.

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Fig. 8.  (Color online) (a, b) Oxygen-deficient polar orthorhombic phase with different polarization orientation. (c) Total energy of the o (oI), f (oIII) and t phase relative to the m phase at different vacancy concentrations. (d) Polarization and switching barrier of the f (oIII) phase at different vacancy concentrations. Reprinted with permission from Ref. [105], copyright 2019 Elsevier B.V.

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Fig. 9.  (Color online) Oxygen vacancy induced polarization and the ferroelectric switching process. Reprinted with permission from Ref. [36], copyright 2018 IEEE.

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Fig. 10.  (Color online) Phase diagram of $ {\mathrm{H}\mathrm{f}\mathrm{O}}_{1.75} $. Reprinted with permission from Ref. [17], copyright 2021 American Physical Society.

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Fig. 11.  (Color online) Transition barrier of M–O transition (black curve, corresponds to NEB image 10–20), M1 phase switching (black curve, corresponds to NEB image 0–10) and O phase switching (red curve). Blue curve is the M–O transition in stoichiometric $ {\mathrm{H}\mathrm{f}\mathrm{O}}_{2} $. Reprinted with permission from Ref. [17], copyright 2021 American Physical Society.

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Fig. 12.  (Color online) (a) HAADF-STEM of a pristine Gd:HfO2 grain with O and M regions separated by boundaries indicated by white arrows. (c) Magnified view of the O1/O2 boundary from (a), with (d). (b, e) Magnified regions from (a) where planes are indicated with lines and the polar direction by arrows. (f) Experiment and simulated PACBED patterns corresponding to O1 and O2 regions. Reprinted with permission from Ref. [26], copyright 2018 John Wiley & Sons, Inc.

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Fig. 13.  (Color online) The direct observation of oxygen atoms of single orthorhombic (O-) phase grain in TiN/Hf0.5Zr0.5O2 (HZO, 15 nm)/TiN device. HAADF- and ABF-STEM images of single O-phase grain (a, b) in pristine, (d, e) after wake-up process, and (f–h) after fatigue process. (c) The atomic models of the Pbc21 and Pbca phases along [010] direction. Reprinted with permission from REF. [177], copyright 2022 Springer Nature Limited.

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Fig. 14.  (Color online) (a) Sawyer-Tower circuit. (b) A circuit for transient I–V measurement. (c) A typical P–V loop of ferroelectric capacitor. (d) A typical transient response of ferroelectric capacitor under triangle wave.

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Fig. 15.  (Color online) (a) Typical I–V–t graph of PUND test: the applied voltage waveform (black line) and the corresponding transient current response (red line). (b) The P–V loop of a HZO ferroelectric capacitor obtained from PUND measurement.

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Fig. 16.  P–E and C–E curves of (a, b) ferroelectrics and (c, d) anti-ferroelectrics

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Fig. 17.  (a) First order reversal curve (FORC) test waveform, (b) FORC I–V plot, (c) FORC P–V loop, and (d) the extracted Preisach density. Reprinted with permission from Ref. [198], copyright 2015 American Chemical Society.

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Fig. 18.  (Color online) 4-cap retention test. Reprinted with permission from Ref. [204], copyright 2013 IEEE.

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Fig. 19.  (Color online) Minor loops are simulated by a linear scaling from the saturated polarization-voltage hysteresis loop. ↑/↓ indicates forward/reverse branch respectively. The switching dynamics are captured using a RC delay. Reprinted with permission from Ref. [221], copyright 2018 IEEE.

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Fig. 20.  (Color online) (a) P–E characteristics in the FE-HfO2-based MFIM structure with ferroelectric thickness of 30 nm and dielectric thickness of 5 nm. (b) Voltages, (c) electric fields, and (d) polarization charges as a function of time operated by triangular voltage waveform at frequency of 1 MHz. (e) Polarization domain patterns during the polarization switching corresponding to the stages label in (d). Reprinted with permission from Ref. [247], copyright 2021 Science China Press.

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Fig. 21.  (Color online) Simulated wake-up of the device: (a) vacancy diffusion and (b) corresponding electric field evolution within the device with the field cycling of the FeCap in three different points in time at 4 MV/cm external applied field. (c) Resulting I–V and P–V characteristics obtained by removing the charges from the interface and changing the k-value of the grains undergoing the phase transformation. Reprinted with permission from Ref. [104], copyright 2016 John Wiley & Sons, Inc.

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Fig. 22.  (Color online) (a) Simulated evolution of remanent polarization during the electric cycles. (b) Simulated VO distribution at different device states corresponding to the points in (a). Reprinted with permission from Ref. [36], copyright 2018 IEEE.

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Fig. 23.  (Color online) Whether percolation exists (a) or not (b) impacts the Vth states. (c) Summary of percolation in FeFET. Reprinted with permission from Ref. [265], copyright 2021 IEEE.

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Fig. 24.  (Color online) (a) 3D Al:HfO2 trench capacitor with trench number up to 105 and aspect ratio of 13 : 1. Measured Pr of 12 nm Al:HfO2 with 100k trenches is 150 μC/cm2. (b) 1T1C FeRAM using 1X nm node DRAM technology. At lower pulse amplitude (0.6 V) the operation of FeRAM with 5 nm HZO is possible with 2Pr of 5 μC/cm2. (a) is reprinted with permission from Ref. [293], copyright 2014 IEEE. (b) is reprinted with permission from Ref. [294], copyright 2021 IEEE.

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Fig. 25.  (Color online) (a) Band diagram of metal/FE-HfO2/SiO2/Si FTJs, where the total tunneling current consists of tunneling current from the CBE (JCBE), VBE (JVBE) and VBH (JVBH). (b) and (c) Comparison of the calculated and measured read current of FTJ based on MFIS(n+) and MFIS(p+). (d) and (e) Corresponding contributions of JCBE, JVBE and JVBH to the total current. Reprinted with permission from Ref. [282], copyright 2020 IEEE.

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Fig. 26.  (Color online) Band diagrams of (a–d) n-type and (e–h) p-type MFIS-FTJ with various metal work function ΦM and remnant polarization Pr at read voltage of |Vread| = 0.2 V. According to the overlap between metal Fermi level Efm and surface energy level of minority band in the semiconductor (Evs in n-type device and Ecs in p-type device), the carrier transport can be respectively classified in to different conduction modes (I-IV). They are differentiated from the tunneling transmission of minority carriers, as represented by the shadow region of (d) and (h). Reprinted with permission from Ref. [283], copyright 2021 IEEE.

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Fig. 27.  (Color online) The storage class memory among the memory pyramid hierarchy. 1T1C FeRAM, 1T FeFET and 3D FeFET are located at M-SCM and S-SCM separately.

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Fig. 28.  (Color online) Ferroelectric based deep learning accelerator. (a) The partial polarization switching behavior in FeFET. (b) Symmetric analog weight modulation schemes. (c) VMM engines in analog and digital modes. (d) The macro circuits for the deep learning accelerator. (a) and (b) are reprinted with permission from Ref. [339], copyright 2017 IEEE. (c) and (d) are reprinted with permission from Ref. [340].

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Fig. 29.  (Color online) Logic gates based on the ferroelectric-capacitor. (a) Logic operation principle of single devices. (b) Circuit diagram of complementary ferroelectric-capacitor logic gate. (c) Measured results of complementary ferroelectric-capacitor logic gate. (a) is reprinted with permission from Ref. [354], copyright 2007 American Institute of Physics. (b) and (c) are reprinted with permission from Ref. [355], copyright 2004 IEEE.

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Fig. 30.  (Color online) Logic gates-based FeFET. (a) Logic operation principle based on single FeFET devices. (b) Circuit diagram of the FeFET based logic gate and the measured results of NOR logic operation. (c) Circuit diagram of XOR and XNOR gates. (d) The full adder based 2T-FeFET array. (a) and (b) are reprinted with permission from Ref. [356], copyright 2017 IEEE. (d) is reprinted with permission from Ref. [251].

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Fig. 31.  (Color online) FeFET based TCAM. (a) The architecture of a TCAM array. (b) The multi-bit FeFET CAM. (b) is reprinted with permission from Ref. [364], copyright 2020 IEEE.

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Table 1.   Ferroelectric HfO2 with different fabrication conditions.

Stack (TE/FE/BE)Dop.%Thickness
(nm)		Deposition technologyThermal
process		Pr
(μC/cm2)		Ec(+/–)
(MV/cm)		Ref.
TiN/Si:HfO2/TiN3.8 mol%8.5ALD1000 °C/20 s>101[1]
TiN/Si:HfO2/TiN3.8 mol%10ALD650 °C/N2151[43]
TiN/Si:HfO2/TiN2.7 cat%10TALD650 °C/20 s18.8~1[44]
TiN/Si:HfO2/TiN1 mol%10ALDNLA 100 pulses/
0.4 J/cm2		19 (2Pr)1.5[45]
TiN/Zr:HfO2/TiN50 at%7.5/9.5ALD450 °C161[47]
TiN/Zr:HfO2/TiN50 at%9ALD500 °C171[20]
TiN/Zr:HfO2/SiOx/n+Si50 at%2.5ALD400 °C3.50.8V[40]
TiN/Zr:HfO2/TiN50 at%5/7/10/20ALD400 °C/60 s/N211.9/40.5/
50.9/32.1 (2Pr)		1[48]
TiN/Al:HfO2/TiN4.8 mol%16ALD1000 °C/20 s/N251[21]
TiN/Al:HfO2/TiN2.2 cat%10TALD650 °C/20 s16.5~1[44]
TiN/La:HfO2/TiN2.1 at%10PEALD650 °C/20 s34 (2Pr)1.3/–1.1[50]
TiN/La:HfO2/TiN1 mol%10PAALD400–500 °C~20 (2Pr)~1.4[51]
TiN/La:HfO2/TiN10 cat%14ALD800 °C/20 s27.71.2[53]
TiN/La:HfO2/TiN6.0 cat%10TALD650 °C/20 s23.6~1[44]
TiN/La:HfO2/TiN5.5 cat%10ALD650°C/20 s/N223~1.2[54]
Pt/La:HfO2/LSMO2 at%6.9PLDTs = 700 °C~30~3.5[56]
Pt/La:HfO2/LSMO5 at%8.5PLDTs = 800 °C~203[57]
TiN/Y:HfO2/TiN5.2 mol%10TALD650°C/20 s/N2241.2[58]
TiN/Y:HfO2/TiN0.9–1.9 mol%12Co-sputtering1000 °C/1 s/N212.51[59]
Pt/ Y:HfO2/Pt5.2 mol%35CSD700 °C/5 min/O2>132[60]
Au/Y:HfO2/n+Ge10 at%26Co-sputtering600 °C/30 s/N2102/–1[61]
TiN/Gd:HfO2/TiN2 mol%10ALD1000 °C/1 s121.75[62]
TaN/Gd:HfO2/TiN3.4 cat%10TALD650 °C/20 s/N230~2[18]
TiN/Ca:HfO2/p+Si4.8 mol%35CSD700 °C/30 s/N210.52[63]
Pt/Ba:HfO2/Pt7.5 mol%42CSD800 °C/90 s
Ar : O2 = 1 : 1		121.5[64]
Pt/Fe:HfO2/ITO6 at%20Ion beam
sputtering		900 °C/10 min/N28.8~2[65]
TiN/N:HfO2/p+Ge0.51%28RF sputtering600 °C102[66]
TiN/HfO2/TiN–20RF sputtering500 °C/30 s/N2~2.52[67]
TiN/HfO2/TiN–136CSD700 °C/60 s/O222.56–[68]
Pt/Zr:HfO2/TiN50 at%10ALD500 °C/30 s/N225 (2Pr)~1.5[79]
Pt/TiN/Zr:HfO2/TiN50 at%10ALD600 °C/30 s/
forming gas		34.1 (2Pr)~1.5[79]
TaN/Si:HfO2/TiN1.2 mol%10PEALD800 °C/20 s/N2101.4[90]
W/Zr:HfO2/TiN50 at%10ALD500 °C/30 s/N238.7 (2Pr)1.18/–0.82[29]
Au/Zr:HfO2/TiN50 at%10ALD500 °C/30 s/N222.8 (2Pr)1.36/–0.64[29]
W/Al:HfO2/IL/p+Si1.03 wt%15ALD650 °C/30 s/N223 (2Pr)–[92]
Pd/Ti/Al:HfO2/p+SiHf:Al cycle
ratio = 23 : 1		20ALD900–950 °C/
1–2 s/N2		20~3[93]
Ir/Si:HfO2/SiO2/p+Si5.65 mol%10ALD1000 °C/1 s/N222–[94]
Pt/TiN/Zr:HfO2/Ir50 at%12.2ALD500 °C/30 s/N2>32 (2Pr)1[95]
Ni/Zr:HfO2/Ru/Si50 at%25ALD550 °C/30 s/N262.4[96]
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Table 2.   Impact of substitutional dopant on the phase stability of $ {\mathrm{H}\mathrm{f}\mathrm{O}}_{2} $. “S” stands for “stabilization”, “D” stands for “destabilization”, and “–” means no data available. “Stabilization” means the relative energy between target phase and m phase lowers when dopant concentration increases. The dopant concentration falls in the range of 0%–6.25%.

ValenceDopantPhase
oIoIIItc
5P––S[148]D[148]
4SiS[147, 149, 154]/D[135]S[135, 147, 149, 154]S[135, 147, 149, 154]D[148]
GeD[149]D[149]S[148, 149]D[148]
SnD[149]S[149]S[148, 149]D[148]
TiD[149]D[149]S[148, 149]D[148]
CS[149]D[149]D[149]–
ZrS[149]S[149]S[149]–
CeS[149]S[149]S[149]–
3LaS[147, 150, 154]S[147, 150, 154]S[147, 150, 154]S[150]
YS[150]S[150]S[148, 150]S[148, 150]
AlS[150]S[150]S[148, 150]D[148, 150]
Sc––D[148]S[148]
Gd––S[148]S[148]
2SrS[151]S[151, 155]S[151, 155]D[151]
BaS[151]S[151]D[151]D[151]
CaS[151]S[151]S[151]D[151]
MgS[151]S[151]D[151]D[151]
BeS[43]S[43]S[43]D[43]
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Table 3.   Selected formation energy of charged oxygen vacancies in m phase $ {\mathrm{H}\mathrm{f}\mathrm{O}}_{2} $ and $ {\mathrm{Z}\mathrm{r}\mathrm{O}}_{2} $ when Fermi level is at VBM. “M” stands for metal species ($ \mathrm{H}\mathrm{f} $ or $ \mathrm{Z}\mathrm{r} $). The system is under extreme reducing condition when ${\mu }_{\rm M}={\mu }_{\rm M}^{0}$, and is under extreme oxidation conditions when ${\mu }_{\rm O}={\mu }_{\rm O}^{0}$. There are two types of oxygen vacancies in m phase $ {\mathrm{H}\mathrm{f}\mathrm{O}}_{2} $: threefold-coordinated vacancy and fourfold-coordinated vacancy. The lowest vacancy energy is listed. Data comes from Ref. [158].

DefectCharge$ {E}_{\mathrm{F}} $ in $ {\mathrm{H}\mathrm{f}\mathrm{O}}_{2} $ (eV)$ {E}_{\mathrm{F}} $ in $ {\mathrm{Z}\mathrm{r}\mathrm{O}}_{2} $ (eV)
${\mu }_{\rm M}={\mu }_{\rm M}^{0}$${\mu }_{\rm O}={\mu }_{\rm O}^{0}$${\mu }_{\rm M}={\mu }_{\rm M}^{0}$${\mu }_{\rm O}={\mu }_{\rm O}^{0}$
$ {\mathrm{V}}_{\mathrm{O}} $00.986.630.826.15
+1–1.663.98–1.793.54
+2–4.830.81–4.790.54
$ {\mathrm{V}}_{\mathrm{M}} $017.015.7316.445.78
–116.975.6916.385.72
–216.995.7116.375.71
-317.075.7916.425.76
–417.265.9816.535.87
$ {\mathrm{O}}_{\mathrm{i}} $07.221.586.641.31
–19.043.408.523.19
–29.523.888.903.57
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Table 4.   The basic functions of CTEM[167, 168].
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Table 5.   Comparison of HAADF- and ABF-STEM techniques[167-169].
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    Received: 16 November 2022 Revised: 01 February 2023 Online: Accepted Manuscript: 11 February 2023Uncorrected proof: 15 February 2023Corrected proof: 08 May 2023Published: 10 May 2023

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      Article Navigation >  Journal of Semiconductors  > 2023  >  44(5): 053101
      Wanwang Yang, Chenxi Yu, Haolin Li, Mengqi Fan, Xujin Song, Haili Ma, Zheng Zhou, Pengying Chang, Peng Huang, Fei Liu, Xiaoyan Liu, Jinfeng Kang. Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications[J]. Journal of Semiconductors, 2023, 44(5): 053101. doi: 10.1088/1674-4926/44/5/053101 W W Yang, C X Yu, H L Li, M Q Fan, X J Song, H L Ma, Z Zhou, P Y Chang, P Huang, F Liu, X Y Liu, J F Kang. Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications[J]. J. Semicond, 2023, 44(5): 053101. doi: 10.1088/1674-4926/44/5/053101Export: BibTex EndNote
      Citation:
      Wanwang Yang, Chenxi Yu, Haolin Li, Mengqi Fan, Xujin Song, Haili Ma, Zheng Zhou, Pengying Chang, Peng Huang, Fei Liu, Xiaoyan Liu, Jinfeng Kang. Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications[J]. Journal of Semiconductors, 2023, 44(5): 053101. doi: 10.1088/1674-4926/44/5/053101

      W W Yang, C X Yu, H L Li, M Q Fan, X J Song, H L Ma, Z Zhou, P Y Chang, P Huang, F Liu, X Y Liu, J F Kang. Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications[J]. J. Semicond, 2023, 44(5): 053101. doi: 10.1088/1674-4926/44/5/053101
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      Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications

      doi: 10.1088/1674-4926/44/5/053101
      • 1.

        School of Integrated Circuits, Peking University, Beijing 100871, China

      • 2.

        Beijing Advanced Innovation Center for Integrated Circuits, Beijing 100871, China

      • 3.

        Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China

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      • Author Bio:

        Wanwang Yang received his B.S. degree in applied physics from the University of Science and Technology of China (USTC) in 2020. Now he is a Ph.D. candidate student at the School of Integrated Circuits, Peking University, under the supervision of Professor Jinfeng Kang. His current research interests focus on the physical mechanism of novel ferroelectric materials and devices

        Chenxi Yu received his B.S. degree in microelectronics engineering from Peking University in 2022. He is a Ph.D. student in the School of Integrated Circuits of Peking University since 2022, under the supervision of Professor Jinfeng Kang. His current research interests include the physical mechanism of novel ferroelectric materials and devices

        Haolin Li received his B.S. degree in microelectronics from Peking University in 2020. He is currently pursuing his Ph.D. degree in microelectronics and solid-state electronics from the School of Integrated Circuits, Peking University. His current research interests include the fabrication and simulation of novel ferroelectric devices

        Mengqi Fan received her B.S. degree in microelectronics from Sun Yat-Sen University, China, in 2018. She is currently pursuing the Ph.D. degree in microelectronics and solid-state electronics with Peking University. Her current research interests include the modeling and simulation of HfO2-based ferroelectric devices

        Xujin Song received his B.S. degree in microelectronics from Peking University, Beijing, China, in 2021. He is currently a Ph.D. student at the School of Integrated Circuits, Peking University, under the supervision of Professor Jinfeng Kang. His current research interests include fabrication and characterization of HfO2-based novel ferroelectric devices

        Haili Ma received his Ph.D. degree in electronic science and technology from Shanghai Jiao Tong University in 2019. He is a Post Doctor of the School of Integrated Circuits, Peking University. His main research interest involves with characterization of ferroelectric materials via Cs-corrected scanning transmission electron microscopy

        Zheng Zhou received his Ph.D. degree in microelectronics and solid-state electronics from Peking University in 2019. He is a Post Doctor of the School of Integrated Circuits, Peking University. His main research interest is the applications of novel electronic devices with integrated sensing, computing and storage

        Pengying Chang received her Ph.D. degree in microelectronics from Peking University in 2017. She is now a professor of Key Laboratory of Optoelectronics Technology, Beijing University of Technology. Her research focuses on the novel logic and memory devices based on III-V, two-dimensional, and ferroelectric materials

        Peng Huang received the B.S. degree from Xidian University, Xi’an, China, in 2010 and the Ph.D. degree in microelectronics from Peking University, Beijing, China in 2015. He is currently an assistant professor in School of Integrated Circuits, Peking University. His research interest is in-memory computing, including device, circuit and architecture

        Fei Liu received a Ph.D. degree in microelectronics and solid-state electronics from Peking University in 2013. Then, he worked at the University of Hong Kong and McGill University. Since 2018, he has been an assistant Professor at Peking University. His research interests focus on modeling and simulation of emerging logic and memory devices

        Xiaoyan Liu received the B.S., M.S., and Ph.D. degrees in microelectronics from Peking University, in 1988, 1991, and 2001, respectively. She is currently a Professor of the School of Integrated Circuits, Peking University. Her research interests include modeling and simulation of physical phenomena in the field of microelectronics. She has published more than 200 research papers coauthored 1 book on microelectronics

        Jinfeng Kang received his Ph.D. degree in solid-state electronics from Peking University in 1995. He is a Professor of the School of Integrated Circuits, Peking University with research interests in novel devices for computing and data storage. He has published over 300 conference and journal papers, and was speaker of 30+ invited talks

      • Corresponding author: kangjf@pku.edu.cn
      • Received Date: 2022-11-16
      • Revised Date: 2023-02-01
        • Available Online: 2023-02-11

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