J. Semicond. > 2023, Volume 44 > Issue 6 > 060301, doi: 10.1088/1674-4926/44/6/060301

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Heterogeneous integration technology for the thermal management of Ga2O3 power devices

Genquan Han1, , Tiangui You2, Yibo Wang3, Zheng-Dong Luo1, Xin Ou2 and Yue Hao1

+ Author Affiliations

 Corresponding author: Genquan Han, gqhan@xidian.edu.cn

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[1]
Barman S K, Huda M N. Mechanism behind the easy exfoliation of Ga2O3 ultra-thin film along (100) surface. Phys Status Solidi RRL, 2019, 13, 1800554
[2]
Cheng Z, Wheeler V D, Bai T Y, et al. Integration of polycrystalline Ga2O3 on diamond for thermal management. Appl Phys Lett, 2020, 116, 062105
[3]
Li Z M, Jiao T, Yu J Q, et al. Single crystalline β-Ga2O3 homoepitaxial films grown by MOCVD. Vacuum, 2020, 178, 109440
[4]
Xu W H, Wang Y B, You T G, et al. First demonstration of waferscale heterogeneous integration of Ga2O3 MOSFETs on SiC and Si substrates by ion-cutting process. 2019 IEEE International Electron Devices Meeting (IEDM). San Francisco, CA, USA. IEEE, 2020, 12.5. 1
[5]
Shen Z H, Xu W H, Chen Y, et al. Wafer-scale single-crystalline β-Ga2O3 thin film on SiC substrate by ion-cutting technique with hydrophilic wafer bonding at elevated temperatures. Sci China Mater, 2023, 66, 756
[6]
Xu W H, You T G, Wang Y B, et al. Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline β-Ga2O3 thin film on SiC. Fundam Res, 2021, 1, 691
[7]
Wang Y B, Xu W H, Han G Q, et al. Channel properties of Ga2O3-on-SiC MOSFETs. IEEE Trans Electron Devices, 2021, 68, 1185
[8]
Wang Y B, Xu W H, You T G, et al. β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process. Sci China Phys Mech Astron, 2020, 63, 277311
[9]
Wang Y B, Xu W H, Han G Q, et al. Channel mobility properties of β-Ga2O3 MOSFETs on Si substrate fabricated by ion-cutting process. 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). Chengdu, China. IEEE, 2021, 1
[10]
Wang Y B, Han G Q, Xu W H, et al. Recessed-gate Ga2O3-on-SiC MOSFETs demonstrating a stable power figure of merit of 100 mW/cm² up to 200 °C. IEEE Trans Electron Devices, 2022, 69, 1945
Fig. 1.  (Color online) The process flow for transferring β-Ga2O3 thin film onto SiC (or Si) by ion-cutting. Reprinted from Xu et al.[4]. Copyright 2021, with permission from IEEE.

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Fig. 2.  (Color online) Benchmarking the measured μeff of GaOSiC MOSFETs against the reported Hall mobility and μeff of bulk β-Ga2O3 materials and devices (data from Ref. [7] and references therein). Reprinted from Wang et al.[7]. Copyright 2021, with permission from IEEE.

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Fig. 3.  (Color online) Benchmarking RON,sp versus Vbr for the heterogeneous GaOSiC MOSFETs with the reported β-Ga2O3 transistors (data from Ref. [10] and references therein). Reprinted from Wang et al.[10]. Copyright 2022, with permission from IEEE.

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[1]
Barman S K, Huda M N. Mechanism behind the easy exfoliation of Ga2O3 ultra-thin film along (100) surface. Phys Status Solidi RRL, 2019, 13, 1800554
[2]
Cheng Z, Wheeler V D, Bai T Y, et al. Integration of polycrystalline Ga2O3 on diamond for thermal management. Appl Phys Lett, 2020, 116, 062105
[3]
Li Z M, Jiao T, Yu J Q, et al. Single crystalline β-Ga2O3 homoepitaxial films grown by MOCVD. Vacuum, 2020, 178, 109440
[4]
Xu W H, Wang Y B, You T G, et al. First demonstration of waferscale heterogeneous integration of Ga2O3 MOSFETs on SiC and Si substrates by ion-cutting process. 2019 IEEE International Electron Devices Meeting (IEDM). San Francisco, CA, USA. IEEE, 2020, 12.5. 1
[5]
Shen Z H, Xu W H, Chen Y, et al. Wafer-scale single-crystalline β-Ga2O3 thin film on SiC substrate by ion-cutting technique with hydrophilic wafer bonding at elevated temperatures. Sci China Mater, 2023, 66, 756
[6]
Xu W H, You T G, Wang Y B, et al. Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline β-Ga2O3 thin film on SiC. Fundam Res, 2021, 1, 691
[7]
Wang Y B, Xu W H, Han G Q, et al. Channel properties of Ga2O3-on-SiC MOSFETs. IEEE Trans Electron Devices, 2021, 68, 1185
[8]
Wang Y B, Xu W H, You T G, et al. β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process. Sci China Phys Mech Astron, 2020, 63, 277311
[9]
Wang Y B, Xu W H, Han G Q, et al. Channel mobility properties of β-Ga2O3 MOSFETs on Si substrate fabricated by ion-cutting process. 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). Chengdu, China. IEEE, 2021, 1
[10]
Wang Y B, Han G Q, Xu W H, et al. Recessed-gate Ga2O3-on-SiC MOSFETs demonstrating a stable power figure of merit of 100 mW/cm² up to 200 °C. IEEE Trans Electron Devices, 2022, 69, 1945

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    Received: 22 May 2023 Revised: Online: Accepted Manuscript: 26 May 2023Uncorrected proof: 26 May 2023Corrected proof: 29 May 2023Published: 08 June 2023

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      Article Navigation >  Journal of Semiconductors  > 2023  >  44(6): 060301
      Genquan Han, Tiangui You, Yibo Wang, Zheng-Dong Luo, Xin Ou, Yue Hao. Heterogeneous integration technology for the thermal management of Ga2O3 power devices[J]. Journal of Semiconductors, 2023, 44(6): 060301. doi: 10.1088/1674-4926/44/6/060301 G Q Han, T G You, Y B Wang, Z D Luo, X Ou, Y Hao. Heterogeneous integration technology for the thermal management of Ga2O3 power devices[J]. J. Semicond, 2023, 44(6): 060301. doi: 10.1088/1674-4926/44/6/060301Export: BibTex EndNote
      Citation:
      Genquan Han, Tiangui You, Yibo Wang, Zheng-Dong Luo, Xin Ou, Yue Hao. Heterogeneous integration technology for the thermal management of Ga2O3 power devices[J]. Journal of Semiconductors, 2023, 44(6): 060301. doi: 10.1088/1674-4926/44/6/060301

      G Q Han, T G You, Y B Wang, Z D Luo, X Ou, Y Hao. Heterogeneous integration technology for the thermal management of Ga2O3 power devices[J]. J. Semicond, 2023, 44(6): 060301. doi: 10.1088/1674-4926/44/6/060301
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      Heterogeneous integration technology for the thermal management of Ga2O3 power devices

      doi: 10.1088/1674-4926/44/6/060301
      • 1.

        School of Microelectronics, Xidian University, Xi’an 710071, China

      • 2.

        State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      • 3.

        Suzhou institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

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      • Author Bio:

        Genquan Han is a full professor at Xidian University and a recipient of the National Science Fund for Distinguished Young Scholars. He graduated from Tsinghua University with a bachelor's degree and received his Ph.D. from the Institute of Semiconductors, Chinese Academy of Sciences in 2008. After graduation, he joined the National University of Singapore to conduct research on advanced microelectronic devices and made original contributions in the field of advanced CMOS device research. Since returning to China in 2013, he has mainly focused on research in wide-bandgap gallium oxide (Ga2O3) heterojunction integrated materials and power devices, post-Moore new micro/nano devices and chips. He serves as an editor for IEEE Electron Device Letters

        Xin Ou is a professor at Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences. He received his Ph.D. degree in microelectronics and solid-state electronics from Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences in 2010. After that he worked in Helmholtz Zentrum Dresden Rossendorf in Germany until 2014 when he joined SIMIT as a professor. He has authored more than 100 SCI papers and been authorized 20 patents. His current research interests include the hetero-integration of functional materials for high-performance electrical, optical and acoustical devices. He is a senior member of IEEE

        Yue Hao is currently a Professor of Microelectronics and Solid-State Electronics with Xidian University, Xi’an, China. His current interests include wide and untra-wide bandgap materials and devices, advanced CMOS devices and technology, semiconductor device reliability physics and failure mechanism, and organic electronics. He is a member of the Chinese Academy of Sciences

      • Corresponding author: gqhan@xidian.edu.cn
      • Received Date: 2023-05-22
        Available Online: 2023-05-26

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