J. Semicond. > 2023, Volume 44 > Issue 6 > 061801, doi: 10.1088/1674-4926/44/6/061801
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REVIEWS

A comprehensive review of recent progress on enhancement-mode β-Ga2O3 FETs: Growth, devices and properties

Botong Li1, 2, Xiaodong Zhang1, 2, Li Zhang1, Yongjian Ma1, 2, Wenbo Tang1, 2, Tiwei Chen1, 2, Yu Hu1, 2, Xin Zhou2, Chunxu Bian2, Chunhong Zeng2, Tao Ju2, Zhongming Zeng1, 2 and Baoshun Zhang1, 2,

+ Author Affiliations

 Corresponding author: Baoshun Zhang, bszhang2006@sinano.ac.cn

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Abstract: Power electronic devices are of great importance in modern society. After decades of development, Si power devices have approached their material limits with only incremental improvements and large conversion losses. As the demand for electronic components with high efficiency dramatically increasing, new materials are needed for power device fabrication. Beta-phase gallium oxide, an ultra-wide bandgap semiconductor, has been considered as a promising candidate, and various β-Ga2O3 power devices with high breakdown voltages have been demonstrated. However, the realization of enhancement-mode (E-mode) β-Ga2O3 field-effect transistors (FETs) is still challenging, which is a critical problem for a myriad of power electronic applications. Recently, researchers have made some progress on E-mode β-Ga2O3 FETs via various methods, and several novel structures have been fabricated. This article gives a review of the material growth, devices and properties of these E-mode β-Ga2O3 FETs. The key challenges and future directions in E-mode β-Ga2O3 FETs are also discussed.

Key words: enhancement mode, FETs, β-Ga2O3



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Fig. 1.  (Color online) (a) The dependences between the breakdown field and bandgap. (b) Theoretical limits of the relation between on-resistances and breakdown voltage for major semiconductors and β-Ga2O3. © 2012 American Institute of Physics. Reprinted with permission from Ref. [6].

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Fig. 2.  (Color online) (a) The schematic of the showerhead MOCVD reaction chamber. © 2021 Elsevier B.V. Reprinted with permission from Ref. [34]. (b) The schematic diagram showing the mechanism of step-flow growth and two-dimensional nucleation growth. © 2019 American Institute of Physics. Reprinted with permission from Ref. [37].

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Fig. 3.  (Color online) (a) Temperature dependence of carrier mobility tested in low-temperature hall measurement. (b) SIMS depth distribution of impurities in MOCVD grown β-Ga2O3 epitaxial layer on (010) substrate. © 2019 American Institute of Physics. Reprinted with permission from Ref. [31].

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Fig. 4.  (Color online) (a) Fabrication process and (b) the geometry structure false-colored SEM image of FinFET with an LSD = 4. (c) The transfer characteristics in the form of log(ID)–VG with the forward and reverse sweeps. (d) The breakdown characteristics of β-Ga2O3 FinFETs with LGD of 16 and 21 μm measured at VGS = 0 V. © 2016 Chabak et al. Reprinted with permission from Ref. [40].

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Fig. 5.  (Color online) (a) The false-colored SEM view of a recessed gate device with the LSD = 3 µm device. The HR-TEM picture below shows the facet morphology of sidewall and bottom in the gate-recess contact and gate metal interfaces. (b) The output characteristics for an LSD = 8 µm device at the gate bias of 8 V. (c) Linear transfer characteristics at VDS = 15 V. © 2017 IEEE. Reprinted with permission from Ref. [29].

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Fig. 6.  (Color online) (a) Schematic diagram of the enhancement-mode MOSFET. (b) Linear transfer characteristics (IDS–VGS) of the fabricated trench gate MOSFET measured at VDS = 10 V. © 2019 IEEE. Reprinted with permission from Ref. [42].

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Fig. 7.  (Color online) (a) Cross section view of the E-mode MOSFETs with the UID channel layer and Si+-implanted source (drain) contacts. (b) Linear transfer characteristics at VDS = 15 V. © 2017 The Japan Society of Applied Physics. Reprinted with permission from Ref. [47].

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Fig. 8.  (Color online) Schematic diagram of lateral Ga2O3 MOSFET structures (a) without and (b) with UID buffer layer. (c) The novel triple layer design of lateral MOSFET structure. © 2021 IEEE. Reprinted with permission from Ref. [47].

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Fig. 9.  (Color online) Cross section view of the FET with (a) UD layer and (b) VLD layer. The (c) linear and (d) semi-logarithmic scale of transfer characteristics extracted from the simulation. © 2021 IEEE. Reprinted with permission from Ref. [48].

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Fig. 10.  (Color online) (a) Schematic diagram of the OA β-Ga2O3 MOSFET with Lgd = 17 μm. (b) Log-scale transfer characteristics of the device. (c) The breakdown characteristics of the OA Ga2O3 MOSFET without source field plate, with single SFP and with double SFP. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Reprinted with permission from Ref. [50].

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Fig. 11.  (Color online) Cross-sectional view of the E-mode HJ-FET (a) without the Al2O3 layer and (b) with the Al2O3 layer. The linear-scale transfer characteristics for the E-mode HJ-FET (c) without the Al2O3 layer and (d) with the Al2O3 layer. © 2022 IEEE. Reprinted with permission from Ref. [55].

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Fig. 12.  (Color online) (a) Cross-section view of the gate-recessed HJ-FET. (b) Log-scale IDS–VGS curves of the gate-recessed HJ-FET at VDS of 0.1, 5, and 8 V. © 2022 IEEE. Reprinted with permission from Ref. [30].

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Fig. 13.  (Color online) (a) Schematic diagram of L-FeG Ga2O3 MOSFET. (b) Linear-scale IDS–VDS and (c) IDS–VGS curves of the D- and E-mode L-FeG Ga2O3 MOSFET with an LSD = 11.4 μm © 2020 Feng et al. Reprinted with permission from Ref. [30].

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Fig. 14.  (Color online) Cross-sectional view of the current aperture vertical Ga2O3. © 2018 IEEE. Reprinted with permission from Ref. [57].

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Fig. 15.  (Color online) Schematics of (a) E-mode and (b) D-mode current aperture vertical Ga2O3 MOSFETs. © 2019 IEEE. Reprinted with permission from Ref. [58].

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Fig. 16.  (Color online) Cross-section schematic of the fabricated VDBFET. © 2022 IEEE. Reprinted with permission from Ref. [59].

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Fig. 17.  (Color online) (a) Cross sections view and (b) optical micrograph of a Ga2O3 UMOSFET with CBL realized by oxygen annealing. (c) Transfer and (d) output characteristics of Ga2O3 UMOSFET © 2022 Zhou et al. Reprinted with permission from Ref. [60].

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Fig. 18.  (Color online) (a) Schematic view of Ga2O3 UMOSFET with CBL realized by N+ implantation. Output characteristics of (b) UMOS-LN and (c) UMOS-HN. Three terminal breakdown characteristics of (d) UMOS-LN and (e) UMOS-HN. © 2023 IEEE. Reprinted with permission from Ref. [61].

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Fig. 19.  (Color online) (a) Cross sections view and (b) output characteristics of a Ga2O3 FinFET. © 2018 IEEE. Reprinted with permission from Ref. [62].

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Fig. 20.  (Color online) Cross section view of (a) gate-connected Ga2O3 FP-MOSFET. © 2015 IEEE. (b) SFP-MOSFET © 2018 IEEE. (c) Composite gate-connected Ga2O3 FP-MOSFET © 2018 IEEE. (d) Ga2O3 composite field plate MOSFET © Mun et al. 2019. (e) Composite gate-connected Ga2O3 FP-MOSFET with polymer passivation. © 2020 IEEE.

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Fig. 21.  (Color online) (a–e) Schematic of the fabricating steps for β-Ga2O3 SJ-equivalent MOSFETs. (f) The Photographs of SJ formed by parallel arranged p-NiO/n-Ga2O3 strips in the region between gate and drain. (g) 3-D schematic diagram of the β-Ga2O3 SJ-equivalent MOSFETs. © 2022 IEEE. Reprinted with permission from Ref. [67].

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Fig. 22.  (Color online) (a) Schematic diagram of the β-Ga2O3 MOSFET. (b) CCD images of β-Ga2O3 MOSFETs with four different channel orientations. (c) Simulation and experimental results of Gate temperatures and IR images for MOSFETs with different orientations. (d) Simulated results of relation between MOSFET channel temperatures and channel orientation at VGS = 4 V. Two devices with different channel widths of 50 and 100 μm were used in this simulation. © 2022 IEEE. Reprinted with permission from Ref. [71].

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Fig. 23.  (Color online) (a) Option 1: Cross section view of a lateral β-Ga2O3 MOSFETs. (b) Option 2: A simulated structure with the β-Ga2O3 substrate bonded by the diamond at the bottom. (c) Option 3: A simulated structure based on the option 2 in (b) optimized by depositing the polycrystalline diamond over the exposed part of β-Ga2O3 channel layer. © 2022 IEEE. Reprinted with permission from Ref. [72].

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Table 1.   Comparison of the physical properties of Si, GaN, SiC, and β-Ga2O3.

Semiconductor materialSiGaN4H-SiCβ-Ga2O3
Eg (eV)1.13.43.34.7-4.9
μ (cm2/(V·s))140012001000300
Ebr (MV/cm)0.33.32.58
BFOM18703403444
λ (W/(cm·K))1.52.12.70.11
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Baliga B J. Fundamentals of power semiconductor devices. Cham: Springer International Publishing, 2019
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    Received: 30 December 2022 Revised: 08 February 2023 Online: Accepted Manuscript: 11 March 2023Uncorrected proof: 13 March 2023Corrected proof: 22 May 2023Published: 08 June 2023

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      Article Navigation >  Journal of Semiconductors  > 2023  >  44(6): 061801
      Botong Li, Xiaodong Zhang, Li Zhang, Yongjian Ma, Wenbo Tang, Tiwei Chen, Yu Hu, Xin Zhou, Chunxu Bian, Chunhong Zeng, Tao Ju, Zhongming Zeng, Baoshun Zhang. A comprehensive review of recent progress on enhancement-mode β-Ga2O3 FETs: Growth, devices and properties[J]. Journal of Semiconductors, 2023, 44(6): 061801. doi: 10.1088/1674-4926/44/6/061801 B T Li, X D Zhang, L Zhang, Y J Ma, W B Tang, T W Chen, Y Hu, X Zhou, C X Bian, C H Zeng, T Ju, Z M Zeng, B S Zhang. A comprehensive review of recent progress on enhancement-mode β-Ga2O3 FETs: Growth, devices and properties[J]. J. Semicond, 2023, 44(6): 061801. doi: 10.1088/1674-4926/44/6/061801Export: BibTex EndNote
      Citation:
      Botong Li, Xiaodong Zhang, Li Zhang, Yongjian Ma, Wenbo Tang, Tiwei Chen, Yu Hu, Xin Zhou, Chunxu Bian, Chunhong Zeng, Tao Ju, Zhongming Zeng, Baoshun Zhang. A comprehensive review of recent progress on enhancement-mode β-Ga2O3 FETs: Growth, devices and properties[J]. Journal of Semiconductors, 2023, 44(6): 061801. doi: 10.1088/1674-4926/44/6/061801

      B T Li, X D Zhang, L Zhang, Y J Ma, W B Tang, T W Chen, Y Hu, X Zhou, C X Bian, C H Zeng, T Ju, Z M Zeng, B S Zhang. A comprehensive review of recent progress on enhancement-mode β-Ga2O3 FETs: Growth, devices and properties[J]. J. Semicond, 2023, 44(6): 061801. doi: 10.1088/1674-4926/44/6/061801
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      A comprehensive review of recent progress on enhancement-mode β-Ga2O3 FETs: Growth, devices and properties

      doi: 10.1088/1674-4926/44/6/061801
      • 1.

        School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China

      • 2.

        Nano Fabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

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      • Author Bio:

        Botong Li got his BS degree from Jilin University in 2021. Now he is a master student at Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, under the supervision of Prof. Baoshun Zhang. His research focuses on the epitaxial growth and device fabrication of Ga2O3

        Baoshun Zhang received his BS degree from Changchun University of Science and Technology in 1994 and PhD degree from the Institute of Semiconductors, Chinese Academy of Sciences in 2003. Then he joined in Hong Kong University of Science and Technology. Currently, he is a researcher at Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, and his research interests include semiconductor material growth and device technology research

      • Corresponding author: bszhang2006@sinano.ac.cn
      • Received Date: 2022-12-30
      • Revised Date: 2023-02-08
        • Available Online: 2023-03-11

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