J. Semicond. > 2024, Volume 45 > Issue 3 > 030201, doi: 10.1088/1674-4926/45/3/030201

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2D black arsenic phosphorous

Junchuan Liang1, Yi Hu1, Liming Ding2, and Zhong Jin1,

+ Author Affiliations

 Corresponding author: Liming Ding, ding@nanoctr.cn; Zhong Jin, zhongjin@nju.edu.cn

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[1]
Novoselov K S, Geim A K, Morozov S V, et al. Electric field effect in atomically thin carbon films. Science, 2004, 306, 666 doi: 10.1126/science.1102896
[2]
Liu H, Neal A T, Zhu Z, et al. Phosphorene: An unexplored 2D semiconductor with a high hole mobility. ACS Nano, 2014, 8, 4033 doi: 10.1021/nn501226z
[3]
Hu Y, Liang J, Xia Y, et al. 2D arsenene and arsenic materials: Fundamental properties, preparation, and applications. Small, 2022, 18, e2104556 doi: 10.1002/smll.202104556
[4]
Ji J, Song X, Liu J, et al. Two-dimensional antimonene single crystals grown by van der Waals epitaxy. Nat Commun, 2016, 7, 13352 doi: 10.1038/ncomms13352
[5]
Pumera M, Sofer Z. 2D monoelemental arsenene, antimonene, and bismuthene: Beyond black phosphorus. Adv Mater, 2017, 29, 1605299 doi: 10.1002/adma.201605299
[6]
Shirotani I, Kawamura H, Tuburaya K, et al. Superconductivity of phosphorus and phosphorus-arsenic alloy under high pressures. Jpn J Appl Phys, 1987, 26, 921 doi: 10.7567/JJAPS.26S3.921
[7]
Osters O, Nilges T, Bachhuber F, et al. Synthesis and identification of metastable compounds: black arsenic-science or fiction? Angew Chem Int Ed Engl, 2012, 51, 2994 doi: 10.1002/anie.201106479
[8]
Liu B L, Köpf M, Abbas A N, et al. Black arsenic-phosphorus: Layered anisotropic infrared semiconductors with highly tunable compositions and properties. Adv Mater, 2015, 27, 4423 doi: 10.1002/adma.201501758
[9]
Xie M, Zhang S, Cai B, et al. A promising two-dimensional solar cell donor: Black arsenic–phosphorus monolayer with 1.54 eV direct bandgap and mobility exceeding 14, 000 cm2V−1s−1. Nano Energy, 2016, 28, 433 doi: 10.1016/j.nanoen.2016.08.058
[10]
Sun J, Lin N, Ren H, et al. The electronic structure, mechanical flexibility and carrier mobility of black arsenic-phosphorus monolayers: a first principles study. Phys Chem Chem Phys, 2016, 18, 9779 doi: 10.1039/C6CP00047A
[11]
Shi X Y, Wang T, Wang J, et al. Synthesis of black arsenic-phosphorus and its application for Er-doped fiber ultrashort laser generation. Opt Mater Express, 2019, 9, 2348 doi: 10.1364/OME.9.002348
[12]
Young E P, Park J, Bai T Y, et al. Wafer-scale black arsenic–phosphorus thin-film synthesis validated with density functional perturbation theory predictions. ACS Appl Nano Mater, 2018, 1, 4737 doi: 10.1021/acsanm.8b00951
[13]
Yuan S F, Shen C F, Deng B C, et al. Air-stable room-temperature mid-infrared photodetectors based on hBN/black arsenic phosphorus/hBN heterostructures. Nano Lett, 2018, 18, 3172 doi: 10.1021/acs.nanolett.8b00835
[14]
Long M S, Gao A Y, Wang P, et al. Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus. Sci Adv, 2017, 3, e1700589 doi: 10.1126/sciadv.1700589
[15]
Zhou W H, Zhang S L, Wang Y Y, et al. Anisotropic in-plane ballistic transport in monolayer black arsenic-phosphorus FETs. Adv Elect Materials, 2020, 6, 1901281 doi: 10.1002/aelm.201901281
[16]
Luxa J, Bouša D, Zoller F, et al. Black phosphorus–arsenic alloys for lithium ion batteries. FlatChem, 2020, 19, 100143 doi: 10.1016/j.flatc.2019.100143
[17]
Yu L, Zhu Z, Gao A Y, et al. Electrically tunable optical properties of few-layer black arsenic phosphorus. Nanotechnology, 2018, 29, 484001 doi: 10.1088/1361-6528/aae05f
Fig. 1.  (Color online) (a) b-AsxP1−x crystal. (b) The band structure of multilayer b-AsP. (c) Enlarged image of the energy band in (b), in which the band has been split into four sub-bands. Reproduced with permission[17], Copyright 2018, IOP Publishing. (d) b-As0.83P0.17 crystal synthesized by CVT. Reproduced with permission[7], Copyright 2015, WILEY-VCH. (e) AFM image for an exfoliated bilayer b-As0.83P0.17 flake. (f) Height profile for the exfoliated bilayer b-As0.83P0.17 flake with a thickness of ~1.3 nm. Reproduced with permission[8], Copyright 2019, Optical Society of America.

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Fig. 2.  (Color online) (a) The preparation of 2D b-AsP nanosheets by the liquid-phase exfoliation method. Reproduced with permission[11], Copyright 2020, American Chemical Society. (b) The MBD synthesis of b-AsP alloys. Reproduced with permission[12], Copyright 2018, American Chemical Society. (c) The hBN/b-As0.83P0.17/hBN heterostructure photodetector. (d) The cross-section of the device by TEM is shown on the left. The elemental mapping is shown on the right. Reproduced with permission[13], Copyright 2018, American Chemical Society.

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[1]
Novoselov K S, Geim A K, Morozov S V, et al. Electric field effect in atomically thin carbon films. Science, 2004, 306, 666 doi: 10.1126/science.1102896
[2]
Liu H, Neal A T, Zhu Z, et al. Phosphorene: An unexplored 2D semiconductor with a high hole mobility. ACS Nano, 2014, 8, 4033 doi: 10.1021/nn501226z
[3]
Hu Y, Liang J, Xia Y, et al. 2D arsenene and arsenic materials: Fundamental properties, preparation, and applications. Small, 2022, 18, e2104556 doi: 10.1002/smll.202104556
[4]
Ji J, Song X, Liu J, et al. Two-dimensional antimonene single crystals grown by van der Waals epitaxy. Nat Commun, 2016, 7, 13352 doi: 10.1038/ncomms13352
[5]
Pumera M, Sofer Z. 2D monoelemental arsenene, antimonene, and bismuthene: Beyond black phosphorus. Adv Mater, 2017, 29, 1605299 doi: 10.1002/adma.201605299
[6]
Shirotani I, Kawamura H, Tuburaya K, et al. Superconductivity of phosphorus and phosphorus-arsenic alloy under high pressures. Jpn J Appl Phys, 1987, 26, 921 doi: 10.7567/JJAPS.26S3.921
[7]
Osters O, Nilges T, Bachhuber F, et al. Synthesis and identification of metastable compounds: black arsenic-science or fiction? Angew Chem Int Ed Engl, 2012, 51, 2994 doi: 10.1002/anie.201106479
[8]
Liu B L, Köpf M, Abbas A N, et al. Black arsenic-phosphorus: Layered anisotropic infrared semiconductors with highly tunable compositions and properties. Adv Mater, 2015, 27, 4423 doi: 10.1002/adma.201501758
[9]
Xie M, Zhang S, Cai B, et al. A promising two-dimensional solar cell donor: Black arsenic–phosphorus monolayer with 1.54 eV direct bandgap and mobility exceeding 14, 000 cm2V−1s−1. Nano Energy, 2016, 28, 433 doi: 10.1016/j.nanoen.2016.08.058
[10]
Sun J, Lin N, Ren H, et al. The electronic structure, mechanical flexibility and carrier mobility of black arsenic-phosphorus monolayers: a first principles study. Phys Chem Chem Phys, 2016, 18, 9779 doi: 10.1039/C6CP00047A
[11]
Shi X Y, Wang T, Wang J, et al. Synthesis of black arsenic-phosphorus and its application for Er-doped fiber ultrashort laser generation. Opt Mater Express, 2019, 9, 2348 doi: 10.1364/OME.9.002348
[12]
Young E P, Park J, Bai T Y, et al. Wafer-scale black arsenic–phosphorus thin-film synthesis validated with density functional perturbation theory predictions. ACS Appl Nano Mater, 2018, 1, 4737 doi: 10.1021/acsanm.8b00951
[13]
Yuan S F, Shen C F, Deng B C, et al. Air-stable room-temperature mid-infrared photodetectors based on hBN/black arsenic phosphorus/hBN heterostructures. Nano Lett, 2018, 18, 3172 doi: 10.1021/acs.nanolett.8b00835
[14]
Long M S, Gao A Y, Wang P, et al. Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus. Sci Adv, 2017, 3, e1700589 doi: 10.1126/sciadv.1700589
[15]
Zhou W H, Zhang S L, Wang Y Y, et al. Anisotropic in-plane ballistic transport in monolayer black arsenic-phosphorus FETs. Adv Elect Materials, 2020, 6, 1901281 doi: 10.1002/aelm.201901281
[16]
Luxa J, Bouša D, Zoller F, et al. Black phosphorus–arsenic alloys for lithium ion batteries. FlatChem, 2020, 19, 100143 doi: 10.1016/j.flatc.2019.100143
[17]
Yu L, Zhu Z, Gao A Y, et al. Electrically tunable optical properties of few-layer black arsenic phosphorus. Nanotechnology, 2018, 29, 484001 doi: 10.1088/1361-6528/aae05f

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    Received: 17 January 2024 Revised: Online: Accepted Manuscript: 22 January 2024Uncorrected proof: 22 January 2024Published: 15 March 2024

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      Article Navigation >  Journal of Semiconductors  > 2024  >  45(3): 030201
      Junchuan Liang, Yi Hu, Liming Ding, Zhong Jin. 2D black arsenic phosphorous[J]. Journal of Semiconductors, 2024, 45(3): 030201. doi: 10.1088/1674-4926/45/3/030201 J C Liang, Y Hu, L M Ding, Z Jin. 2D black arsenic phosphorous[J]. J. Semicond, 2024, 45(3): 030201. doi: 10.1088/1674-4926/45/3/030201Export: BibTex EndNote
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      Junchuan Liang, Yi Hu, Liming Ding, Zhong Jin. 2D black arsenic phosphorous[J]. Journal of Semiconductors, 2024, 45(3): 030201. doi: 10.1088/1674-4926/45/3/030201

      J C Liang, Y Hu, L M Ding, Z Jin. 2D black arsenic phosphorous[J]. J. Semicond, 2024, 45(3): 030201. doi: 10.1088/1674-4926/45/3/030201
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      2D black arsenic phosphorous

      doi: 10.1088/1674-4926/45/3/030201
      • 1.

        Key Laboratory of Mesoscopic Chemistry (MoE), School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China

      • 2.

        Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing 100190, China

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      • Author Bio:

        Junchuan Liang Junchuan Liang received his BS in Lanzhou University in 2019. He is now pursuing his PhD under the supervision of Prof. Zhong Jin in School of Chemistry and Chemical Engineering at Nanjing University. His research focuses on 2D nanomaterials

        Yi Hu Yi Hu received his BS in Chemistry from Sichuan University in 2014. He got his PhD under the supervision of Prof. Zhong Jin in School of Chemistry and Chemical Engineering at Nanjing University. His research focuses on 2D nanomaterials and related devices

        Liming Ding Liming Ding got his PhD from University of Science and Technology of China (was a joint student at Changchun Institute of Applied Chemistry, CAS). He started his research on OSCs and PLEDs in Olle Inganäs Lab in 1998. Later on, he worked at National Center for Polymer Research, Wright-Patterson Air Force Base and Argonne National Lab (USA). He joined Konarka as a Senior Scientist in 2008. In 2010, he joined National Center for Nanoscience and Technology as a full professor. His research focuses on innovative materials and devices. He is RSC Fellow, and the Associate Editors for Journal of Semiconductors and DeCarbon

        Zhong Jin Zhong Jin received his BS (2003) and PhD (2008) at Peking University. He worked as a postdoc at Rice University (2008−2010) and Massachusetts Institute of Technology (2010−2014). At 2014, he was appointed as a professor in School of Chemistry and Chemical Engineering at Nanjing University. His research focuses on the development of advanced materials and devices for clean energy conversion and storage

      • Corresponding author: ding@nanoctr.cn; zhongjin@nju.edu.cn
      • Received Date: 2024-01-17
        Available Online: 2024-01-22

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