975 nm multimode semiconductor lasers with high-order Bragg diffraction gratings

Zhenwu Liu; Li Zhong; Suping Liu; Xiaoyu Ma

doi:10.1088/1674-4926/45/3/032401

J. Semicond. > 2024, Volume 45 > Issue 3 > 032401, doi: 10.1088/1674-4926/45/3/032401

ARTICLES

975 nm multimode semiconductor lasers with high-order Bragg diffraction gratings

Zhenwu Liu^{1, 2}, Li Zhong^{1, 2,}, Suping Liu^1, and Xiaoyu Ma^{1, 2}

+ Author Affiliations

Corresponding author: Li Zhong, zhongli@semi.ac.cn; Suping Liu, spliu@semi.ac.cn

Abstract: The 975 nm multimode diode lasers with high-order surface Bragg diffraction gratings have been simulated and calculated using the 2D finite difference time domain (FDTD) algorithm and the scattering matrix method (SMM). The periods and etch depth of the grating parameters have been optimized. A board area laser diode (BA-LD) with high-order diffraction gratings has been designed and fabricated. At output powers up to 10.5 W, the measured spectral width of full width at half maximum (FWHM) is less than 0.5 nm. The results demonstrate that the designed high-order surface gratings can effectively narrow the spectral width of multimode semiconductor lasers at high output power.

Key words: laser diodes, distributed Bragg reflector, high order gratings, high power laser diodes, narrow spectrum width

References

[1]	Sohail M, Khan N Z, Chen T H, et al. 1.3 kW continuous wave output power of ytterbium-doped large-core fiber laser. ECS J Solid State Sci Technol, 2021, 10(2), 026005 doi: 10.1149/2162-8777/abe6f6
[2]	Mirza J, Ghafoor S, Kousar A, et al. Design of a continuous-wave ytterbium-doped tunable fiber laser pump for thulium-doped fiber amplifiers. Arab J Sci Eng, 2022, 47(3), 3541 doi: 10.1007/s13369-021-06440-7
[3]	Anashkina E A, Andrianov A V, Dorofeev V V, et al. Development of infrared fiber lasers at 1555 nm and at 2800 nm based on Er-doped zinc-tellurite glass fiber. J Non Cryst Solids, 2019, 525, 119667 doi: 10.1016/j.jnoncrysol.2019.119667
[4]	Gu Y Y, Fu Y M, Lu H, et al. The theoretical calculation and output characteristic analysis of Yb doped fiber laser. 2020 IEEE 5th Information Technology and Mechatronics Engineering Conference (ITOEC), 2020, 1745 doi: 10.1109/ITOEC49072.2020.9141632
[5]	Ma X Y, Zhang N L, Zhong L, et al. Research progress of high power semiconductor laser pump source. High Power Laser And Particle Beams, 2020, 32(12), 121010 doi: 10.11884/HPLPB202032.200236
[6]	Lang X K, Jia P, Chen Y Y, et al. Advances in narrow linewidth diode lasers. Sci China Inf Sci, 2019, 62, 1 doi: 10.1007/s11432-019-9870-0
[7]	Jiang L L, Achtenhagen M, Amarasinghe N V, et al. High-power DBR laser diodes grown in a single epitaxial step. Novel in-Plane Semiconductor Lasers VIII, 2009, 7230, 283 doi: 10.1117/12.807872
[8]	Bachmann F G. High-power diode laser technology and applications. High-Power Lasers in Manufacturing, 2000, 3888, 394 doi: 10.1117/12.377093
[9]	Paoletti R, Coriasso C, Meneghini G, et al. Wavelength-stabilized DBR high-power diode laser. J Phys Photonics, 2020, 2, 014010 doi: 10.1088/2515-7647/ab6712
[10]	Lang X K, Jia P, Qin L, et al. 980 nm high-power tapered semiconductor laser with high order gratings. Journal of Infrared and Millimeter Waves, 2021, 40, 721 doi: 10.11972/j.issn.1001-9014.2021.06.003
[11]	Zolotarev V V, Leshko A Y, Pikhtin N A, et al. Integrated high-order surface diffraction gratings for diode lasers. Quantum Electron, 2015, 45(12), 1091 doi: 10.1070/QE2015v045n12ABEH015871
[12]	Zolotarev V V, Yu Leshko A, Shamakhov V V, et al. Continuous wave and pulse (2–100 ns) high power AlGaAs/GaAs laser diodes (1050 nm) based on high and low reflective 13th order DBR. Semicond Sci Technol, 2020, 35(1), 015009 doi: 10.1088/1361-6641/ab5435
[13]	Sullivan D M. Electromagnetic simulation using the FDTD method. John Wiley & Sons, 2013, 1, 1
[14]	Rumpf R C. Improved formulation of scattering matrices for semi-analytical methods that is consistent with convention. Prog Electromagn Res B, 2011, 35, 241 doi: 10.2528/PIERB11083107
[15]	Palmer C, Loewen E G. Diffraction grating handbook. New York: Newport Corporation, 2005
[16]	Man Y X, Zhong L, Ma X Y, et al. 975 nm semiconductor lasers with ultra-low internal optical loss. Acta Opt Sin, 2020, 40(19), 1914001 doi: 10.3788/AOS202040.1914001
[17]	Adachi S. GaAs, AlAs, and Al_xGa_{1− x}As: Material parameters for use in research and device applications. J Appl Phys, 1985, 58(3), R1 doi: 10.1063/1.336070
[18]	Seifert S, Runge P. Revised refractive index and absorption of In₁_-xGa_xAs_yP_1-y lattice-matched to InP in transparent and absorption IR-region. Opt Mater Express, 2016, 6, 629 doi: 10.1364/OME.6.000629
[19]	Sun W, Zhao G Y, Lu Q Y, et al. High-speed directly modulated lasers based on high-order slotted surface gratings. Physics and Simulation of Optoelectronic Devices XXV, 2017, 10098, 166 doi: 10.1117/12.2254127
[20]	Streifer W, Scifres D, Burnham R. Coupled wave analysis of DFB and DBR lasers. IEEE J Quantum Electron, 1977, 13, 134 doi: 10.1109/JQE.1977.1069328
[21]	Kang J H, Wenzel H, Freier E, et al. Continuous-wave operation of 405 nm distributed Bragg reflector laser diodes based on GaN using 10th-order surface gratings. Photon Res, 2022, 10(5), 1157 doi: 10.1364/PRJ.444947

Fig. 1. (Color online) Refractive index and light field distribution of the asymmetric large optical cavity structure.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) Schematic diagram of the model for a single grating cycle

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) (a) The grating period and etch slot width versus grating transmittance for high precision scanning. (b) The grating period and etch slot width versus grating reflectance for high precision scanning.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) (a) Relationship between etching depth and reflectivity for a grid period of 25. (b) Transmittance of gratings at different etching depths.

DownLoad: Full-Size Img PowerPoint

Fig. 5. (Color online) (a) Grating reflectance and transmittance versus grating period for a grating etching depth of 1.35 μm. (b) Transmittance of gratings at different grating period numbers.

DownLoad: Full-Size Img PowerPoint

Fig. 6. (Color online) (a) Effect of etch depth on threshold gain. (b) Effect of grating period on threshold gain.

DownLoad: Full-Size Img PowerPoint

Fig. 7. SEM image after grid etching.

DownLoad: Full-Size Img PowerPoint

Fig. 8. (Color online) (a) P−I−V curve of a HO-BDG-LD with 240 μm width; (b) P−I−V curve of a FP-LD without grating.

DownLoad: Full-Size Img PowerPoint

Table 1. Epitaxial structures of the laser diode.

Layer type	Material	Thickness (nm)
Contact	P-GaAs	200
P-cladding	P-AlGaAs	1000
P-waveguide	P-AlGaAs	600
QW	InGaAs/AlGaAs	−
N-waveguide	N-AlGaAs	900
N-cladding	N-AlGaAs	1000
Buffer	N-GaAs	300
Substrate	N-GaAs	−

DownLoad: CSV

Table 2. Parameters used in the calculation.

Parameters	Numerical value	Unit
$ L $	5500	μm
$ {\alpha _i} $	0.259^[16]	cm⁻¹
$ {R_2} $	0.99	/

DownLoad: CSV

[1]	Sohail M, Khan N Z, Chen T H, et al. 1.3 kW continuous wave output power of ytterbium-doped large-core fiber laser. ECS J Solid State Sci Technol, 2021, 10(2), 026005 doi: 10.1149/2162-8777/abe6f6
[2]	Mirza J, Ghafoor S, Kousar A, et al. Design of a continuous-wave ytterbium-doped tunable fiber laser pump for thulium-doped fiber amplifiers. Arab J Sci Eng, 2022, 47(3), 3541 doi: 10.1007/s13369-021-06440-7
[3]	Anashkina E A, Andrianov A V, Dorofeev V V, et al. Development of infrared fiber lasers at 1555 nm and at 2800 nm based on Er-doped zinc-tellurite glass fiber. J Non Cryst Solids, 2019, 525, 119667 doi: 10.1016/j.jnoncrysol.2019.119667
[4]	Gu Y Y, Fu Y M, Lu H, et al. The theoretical calculation and output characteristic analysis of Yb doped fiber laser. 2020 IEEE 5th Information Technology and Mechatronics Engineering Conference (ITOEC), 2020, 1745 doi: 10.1109/ITOEC49072.2020.9141632
[5]	Ma X Y, Zhang N L, Zhong L, et al. Research progress of high power semiconductor laser pump source. High Power Laser And Particle Beams, 2020, 32(12), 121010 doi: 10.11884/HPLPB202032.200236
[6]	Lang X K, Jia P, Chen Y Y, et al. Advances in narrow linewidth diode lasers. Sci China Inf Sci, 2019, 62, 1 doi: 10.1007/s11432-019-9870-0
[7]	Jiang L L, Achtenhagen M, Amarasinghe N V, et al. High-power DBR laser diodes grown in a single epitaxial step. Novel in-Plane Semiconductor Lasers VIII, 2009, 7230, 283 doi: 10.1117/12.807872
[8]	Bachmann F G. High-power diode laser technology and applications. High-Power Lasers in Manufacturing, 2000, 3888, 394 doi: 10.1117/12.377093
[9]	Paoletti R, Coriasso C, Meneghini G, et al. Wavelength-stabilized DBR high-power diode laser. J Phys Photonics, 2020, 2, 014010 doi: 10.1088/2515-7647/ab6712
[10]	Lang X K, Jia P, Qin L, et al. 980 nm high-power tapered semiconductor laser with high order gratings. Journal of Infrared and Millimeter Waves, 2021, 40, 721 doi: 10.11972/j.issn.1001-9014.2021.06.003
[11]	Zolotarev V V, Leshko A Y, Pikhtin N A, et al. Integrated high-order surface diffraction gratings for diode lasers. Quantum Electron, 2015, 45(12), 1091 doi: 10.1070/QE2015v045n12ABEH015871
[12]	Zolotarev V V, Yu Leshko A, Shamakhov V V, et al. Continuous wave and pulse (2–100 ns) high power AlGaAs/GaAs laser diodes (1050 nm) based on high and low reflective 13th order DBR. Semicond Sci Technol, 2020, 35(1), 015009 doi: 10.1088/1361-6641/ab5435
[13]	Sullivan D M. Electromagnetic simulation using the FDTD method. John Wiley & Sons, 2013, 1, 1
[14]	Rumpf R C. Improved formulation of scattering matrices for semi-analytical methods that is consistent with convention. Prog Electromagn Res B, 2011, 35, 241 doi: 10.2528/PIERB11083107
[15]	Palmer C, Loewen E G. Diffraction grating handbook. New York: Newport Corporation, 2005
[16]	Man Y X, Zhong L, Ma X Y, et al. 975 nm semiconductor lasers with ultra-low internal optical loss. Acta Opt Sin, 2020, 40(19), 1914001 doi: 10.3788/AOS202040.1914001
[17]	Adachi S. GaAs, AlAs, and Al_xGa_{1− x}As: Material parameters for use in research and device applications. J Appl Phys, 1985, 58(3), R1 doi: 10.1063/1.336070
[18]	Seifert S, Runge P. Revised refractive index and absorption of In₁_-xGa_xAs_yP_1-y lattice-matched to InP in transparent and absorption IR-region. Opt Mater Express, 2016, 6, 629 doi: 10.1364/OME.6.000629
[19]	Sun W, Zhao G Y, Lu Q Y, et al. High-speed directly modulated lasers based on high-order slotted surface gratings. Physics and Simulation of Optoelectronic Devices XXV, 2017, 10098, 166 doi: 10.1117/12.2254127
[20]	Streifer W, Scifres D, Burnham R. Coupled wave analysis of DFB and DBR lasers. IEEE J Quantum Electron, 1977, 13, 134 doi: 10.1109/JQE.1977.1069328
[21]	Kang J H, Wenzel H, Freier E, et al. Continuous-wave operation of 405 nm distributed Bragg reflector laser diodes based on GaN using 10th-order surface gratings. Photon Res, 2022, 10(5), 1157 doi: 10.1364/PRJ.444947

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Received: 21 June 2023 Revised: 09 November 2023 Online: Accepted Manuscript: 26 December 2023Uncorrected proof: 27 December 2023Published: 15 March 2024

Article Navigation > Journal of Semiconductors > 2024 > 45(3): 032401

Zhenwu Liu, Li Zhong, Suping Liu, Xiaoyu Ma. 975 nm multimode semiconductor lasers with high-order Bragg diffraction gratings[J]. Journal of Semiconductors, 2024, 45(3): 032401. doi: 10.1088/1674-4926/45/3/032401 Z W Liu, L Zhong, S P Liu, X Y Ma. 975 nm multimode semiconductor lasers with high-order Bragg diffraction gratings[J]. J. Semicond, 2024, 45(3): 032401. doi: 10.1088/1674-4926/45/3/032401Export: BibTex EndNote

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Zhenwu Liu, Li Zhong, Suping Liu, Xiaoyu Ma. 975 nm multimode semiconductor lasers with high-order Bragg diffraction gratings[J]. Journal of Semiconductors, 2024, 45(3): 032401. doi: 10.1088/1674-4926/45/3/032401

Z W Liu, L Zhong, S P Liu, X Y Ma. 975 nm multimode semiconductor lasers with high-order Bragg diffraction gratings[J]. J. Semicond, 2024, 45(3): 032401. doi: 10.1088/1674-4926/45/3/032401

Export: BibTex EndNote

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Z W Liu, L Zhong, S P Liu, X Y Ma. 975 nm multimode semiconductor lasers with high-order Bragg diffraction gratings[J]. J. Semicond, 2024, 45(3): 032401. doi: 10.1088/1674-4926/45/3/032401

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975 nm multimode semiconductor lasers with high-order Bragg diffraction gratings

doi: 10.1088/1674-4926/45/3/032401

Zhenwu Liu^{1, 2},
Li Zhong^{1, 2,},
Suping Liu^1,,
Xiaoyu Ma^{1, 2}

1.
National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2.
College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

More Information

Author Bio:
Zhenwu Liu Zhenwu Liu got his BS from Nanjing University of Posts and Telecommunications in 2020. Now he is a PhD student at University of Chinese Academy of Sciences under the supervision of Prof. Xiaoyu Ma. His research focuses on high power semiconductor lasers

Li Zhong Li Zhong is a researcher and doctoral supervisor. She obtained her bachelor's degree in Engineering from Jilin University in 2003 and her PhD in Engineering from the Institute of Semiconductors, Chinese Academy of Sciences, in 2008. In the same year, she joined the Institute of Semiconductors, Chinese Academy of Sciences, where she has been working ever since. Her research focuses on the development of semiconductor lasers and the physics of semiconductor devices

Suping Liu Suping Liu got her BS degree in 1992 and MS degree in 1995 at Jilin University. Then she joined Xiaoyu Ma Group at Institute of Semiconductors, Chinese Academy of Sciences as a senior engineer. Her research interests include high power semiconductor lasers and their components, solid state lasers and storage lasers
Corresponding author: zhongli@semi.ac.cn; spliu@semi.ac.cn
Received Date: 2023-06-21
Revised Date: 2023-11-09

Available Online: 2023-12-26

Abstract

Abstract

The 975 nm multimode diode lasers with high-order surface Bragg diffraction gratings have been simulated and calculated using the 2D finite difference time domain (FDTD) algorithm and the scattering matrix method (SMM). The periods and etch depth of the grating parameters have been optimized. A board area laser diode (BA-LD) with high-order diffraction gratings has been designed and fabricated. At output powers up to 10.5 W, the measured spectral width of full width at half maximum (FWHM) is less than 0.5 nm. The results demonstrate that the designed high-order surface gratings can effectively narrow the spectral width of multimode semiconductor lasers at high output power.
- laser diodes,
- distributed Bragg reflector,
- high order gratings,
- high power laser diodes,
- narrow spectrum width

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References(21)

References

[1]	Sohail M, Khan N Z, Chen T H, et al. 1.3 kW continuous wave output power of ytterbium-doped large-core fiber laser. ECS J Solid State Sci Technol, 2021, 10(2), 026005 doi: 10.1149/2162-8777/abe6f6
[2]	Mirza J, Ghafoor S, Kousar A, et al. Design of a continuous-wave ytterbium-doped tunable fiber laser pump for thulium-doped fiber amplifiers. Arab J Sci Eng, 2022, 47(3), 3541 doi: 10.1007/s13369-021-06440-7
[3]	Anashkina E A, Andrianov A V, Dorofeev V V, et al. Development of infrared fiber lasers at 1555 nm and at 2800 nm based on Er-doped zinc-tellurite glass fiber. J Non Cryst Solids, 2019, 525, 119667 doi: 10.1016/j.jnoncrysol.2019.119667
[4]	Gu Y Y, Fu Y M, Lu H, et al. The theoretical calculation and output characteristic analysis of Yb doped fiber laser. 2020 IEEE 5th Information Technology and Mechatronics Engineering Conference (ITOEC), 2020, 1745 doi: 10.1109/ITOEC49072.2020.9141632
[5]	Ma X Y, Zhang N L, Zhong L, et al. Research progress of high power semiconductor laser pump source. High Power Laser And Particle Beams, 2020, 32(12), 121010 doi: 10.11884/HPLPB202032.200236
[6]	Lang X K, Jia P, Chen Y Y, et al. Advances in narrow linewidth diode lasers. Sci China Inf Sci, 2019, 62, 1 doi: 10.1007/s11432-019-9870-0
[7]	Jiang L L, Achtenhagen M, Amarasinghe N V, et al. High-power DBR laser diodes grown in a single epitaxial step. Novel in-Plane Semiconductor Lasers VIII, 2009, 7230, 283 doi: 10.1117/12.807872
[8]	Bachmann F G. High-power diode laser technology and applications. High-Power Lasers in Manufacturing, 2000, 3888, 394 doi: 10.1117/12.377093
[9]	Paoletti R, Coriasso C, Meneghini G, et al. Wavelength-stabilized DBR high-power diode laser. J Phys Photonics, 2020, 2, 014010 doi: 10.1088/2515-7647/ab6712
[10]	Lang X K, Jia P, Qin L, et al. 980 nm high-power tapered semiconductor laser with high order gratings. Journal of Infrared and Millimeter Waves, 2021, 40, 721 doi: 10.11972/j.issn.1001-9014.2021.06.003
[11]	Zolotarev V V, Leshko A Y, Pikhtin N A, et al. Integrated high-order surface diffraction gratings for diode lasers. Quantum Electron, 2015, 45(12), 1091 doi: 10.1070/QE2015v045n12ABEH015871
[12]	Zolotarev V V, Yu Leshko A, Shamakhov V V, et al. Continuous wave and pulse (2–100 ns) high power AlGaAs/GaAs laser diodes (1050 nm) based on high and low reflective 13th order DBR. Semicond Sci Technol, 2020, 35(1), 015009 doi: 10.1088/1361-6641/ab5435
[13]	Sullivan D M. Electromagnetic simulation using the FDTD method. John Wiley & Sons, 2013, 1, 1
[14]	Rumpf R C. Improved formulation of scattering matrices for semi-analytical methods that is consistent with convention. Prog Electromagn Res B, 2011, 35, 241 doi: 10.2528/PIERB11083107
[15]	Palmer C, Loewen E G. Diffraction grating handbook. New York: Newport Corporation, 2005
[16]	Man Y X, Zhong L, Ma X Y, et al. 975 nm semiconductor lasers with ultra-low internal optical loss. Acta Opt Sin, 2020, 40(19), 1914001 doi: 10.3788/AOS202040.1914001
[17]	Adachi S. GaAs, AlAs, and Al_xGa_{1− x}As: Material parameters for use in research and device applications. J Appl Phys, 1985, 58(3), R1 doi: 10.1063/1.336070
[18]	Seifert S, Runge P. Revised refractive index and absorption of In₁_-xGa_xAs_yP_1-y lattice-matched to InP in transparent and absorption IR-region. Opt Mater Express, 2016, 6, 629 doi: 10.1364/OME.6.000629
[19]	Sun W, Zhao G Y, Lu Q Y, et al. High-speed directly modulated lasers based on high-order slotted surface gratings. Physics and Simulation of Optoelectronic Devices XXV, 2017, 10098, 166 doi: 10.1117/12.2254127
[20]	Streifer W, Scifres D, Burnham R. Coupled wave analysis of DFB and DBR lasers. IEEE J Quantum Electron, 1977, 13, 134 doi: 10.1109/JQE.1977.1069328
[21]	Kang J H, Wenzel H, Freier E, et al. Continuous-wave operation of 405 nm distributed Bragg reflector laser diodes based on GaN using 10th-order surface gratings. Photon Res, 2022, 10(5), 1157 doi: 10.1364/PRJ.444947

975 nm multimode semiconductor lasers with high-order Bragg diffraction gratings

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