J. Semicond. > 2024, Volume 45 > Issue 4 > 041701, doi: 10.1088/1674-4926/45/4/041701
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REVIEWS

Light-emitting devices based on atomically thin MoSe2

Xinyu Zhang1, Xuewen Zhang1, Hanwei Hu1, Vanessa Li Zhang2, Weidong Xiao1, Guangchao Shi1, Jingyuan Qiao1, Nan Huang1, Ting Yu2, 3, and Jingzhi Shang1,

+ Author Affiliations

 Corresponding author: Ting Yu, yu.ting@whu.edu.cn; Jingzhi Shang, iamjzshang@nwpu.edu.cn

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Abstract: Atomically thin MoSe2 layers, as a core member of the transition metal dichalcogenides (TMDs) family, benefit from their appealing properties, including tunable band gaps, high exciton binding energies, and giant oscillator strengths, thus providing an intriguing platform for optoelectronic applications of light-emitting diodes (LEDs), field-effect transistors (FETs), single-photon emitters (SPEs), and coherent light sources (CLSs). Moreover, these MoSe2 layers can realize strong excitonic emission in the near-infrared wavelengths, which can be combined with the silicon-based integration technologies and further encourage the development of the new generation technologies of on-chip optical interconnection, quantum computing, and quantum information processing. Herein, we overview the state-of-the-art applications of light-emitting devices based on two-dimensional MoSe2 layers. Firstly, we introduce recent developments in excitonic emission features from atomically thin MoSe2 and their dependences on typical physical fields. Next, we focus on the exciton-polaritons and plasmon-exciton polaritons in MoSe2 coupled to the diverse forms of optical microcavities. Then, we highlight the promising applications of LEDs, SPEs, and CLSs based on MoSe2 and their heterostructures. Finally, we summarize the challenges and opportunities for high-quality emission of MoSe2 and high-performance light-emitting devices.

Key words: MoSe2, light−matter interaction, exciton, polariton, light-emitting device



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Fig. 1.  (Color online) Intriguing applications based on atomically thin MoSe2, including light-emitting diodes, single-photon emitters, and coherent light sources.

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Fig. 2.  (Color online) (a−d) ARPES spectra of MoSe2 thin layers with different thicknesses[37]. (e) Schematic of band structures of MoX2 and WX2 monolayers[40]. (f) Classification of excitonic quasiparticles, including neutral excitons (X0), charged excitons (X*), biexcitons (XX), and interlayer excitons (XI).

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Fig. 3.  (Color online) (a) Schematic, optical image, and PL mapping of the freestanding bilayer MoSe2[47]. (b) The PL spectra both of the freestanding bilayer MoSe2 and the one on SiO2 substrate, where the "X", "T", and "A" refer to the emission peak of biexcitons, trions, and excitons, respectively[47]. (c) The relationship between PL intensities of A and X[47]. (d) Illustration of different kinds of excitons in real space[15]. (e) Measured and simulated reflection contrast spectra (Rsam/Rsub) of h-BN-encapsulated monolayer MoSe2[15]. (f) Measured and simulated reflection contrast spectra of h-BN-encapsulated bilayer MoSe2[15].

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Fig. 4.  (Color online) (a) PL spectra of monolayer MoSe2 at different temperatures[48]. (b) Two pronounced PL peaks of monolayer MoSe2 at 20 K: the higher-energy X0 and the lower-energy X* at 1.659 and 1.63 eV, respectively. The inset indicates the X* binding energy of approximately 30 meV[57]. (c) Temperature-dependent PL spectra of monolayer MoSe2[57]. (d) PL spectra of monolayer MoSe2 measured in the temperature range from 0 to 300 K[59]. (e) A and B excitonic energies at different temperatures, which were fitted by the Varshni relationships[59].

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Fig. 5.  (Color online) (a) PL and reflectance contrast (RC) spectra of h-BN encapsulated monolayer MoSe2 at 10 K, where the Xb and XT represent the bright neutral excitons and the trions bands, respectively[55]. (b) PL intensity map of encapsulated monolayer MoSe2 at different in-plane magnetic fields[55]. (c) PL spectra of samples measured at 0 and 31 T[55]. (d) Magnetic field dependence of PL intensity map of monolayer MoSe2[56]. (e) Gate voltage dependencies of PL intensities for X* and X0, respectively[57]. (f) Calculation results of the exciton band structures of bright KK and dark KΛ in the MoSe2 bilayer[54].

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Fig. 6.  (Color online) (a) Schematic of a monolayer-MoSe2 coupled plasmonic microcavity[26]. (b) Simulated scattering spectra of MoSe2 coupled microcavities, where the blue dashed and the red solid lines correspond to the MoSe2 monolayers without/with the Al2O3 coating, respectively. The yellow PL spectrum is from the MoSe2 monolayer on a quartz substrate[26]. (c) The distributions of surface charge and electric field[26]. (d) Illustration of a MoSe2 monolayer encapsulated by h-BN on SiO2/Si[7]. (e) The PL spectrum of MoSe2 encapsulated by h-BN layers exhibits the neutral (X) and the charged (T) exciton bands at 7 K[7]. (f) The bottom h-BN thickness dependence of X radiative lifetime of monolayer MoSe2. The red dotted line shows the intensities of the electromagnetic field. The inset presents the normalized time-resolved photoluminescence (TRPL) intensities with different bottom h-BN layers[7]. (g) Diagram of the WSe2/MoSe2 heterostructure coupled with Au nanodisks on the PPhC[30]. (h) The energy dependences of the averaged Purcell factors of γmean and the coefficients of σ(γ)/γmean, respectively[30]. (i) The left panel is the typical interlayer excitons in a heterostructure and the right panel represents long-lived interlayer excitons in a heterostructure coupled with the nano-photonic microcavity[30].

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Fig. 7.  (Color online) (a) Illustration of exciton−photon interaction in the case of an F−P microcavity system. (b) Schematic of angle-resolved optical response in the exciton−photon strong coupling regime, exhibiting the anti-crossing characteristics[77]. (c) Structures of monolayer MoSe2 integrating into an open cavity (left) and a monolithic cavity (right), respectively[33]. (d) Schematic of the self-hybridized F−P cavity in bulk TMDs[78].

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Fig. 8.  (Color online) Various polaritons are formed in TMDs-coupled cavities, including EPs, PEPs, and phonon-polaritons.

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Fig. 9.  (Color online) (a, b) A tunable hemispherical cavity coupled with the MoSe2/hBN heterostructures formed by a planar and a concave DBR and the corresponding strong coupling behavior with a Rabi splitting of 29 meV, respectively[27]. (c) Schematic of a MoSe2/h-BN heterostructure embedded in the F−P microcavity[34]. (d) Angle-resolved photoluminescence (ARPL) image of a MoSe2/h-BN heterostructure in a monolithic cavity[34]. (e) Schematic of a high-quality F−P microcavity device embedded with a h-BN encapsulated monolayer MoSe2[29]. (f) Measured and fitted reflection contrast spectra of the bare cavity mode and the one with hBN layers[29]. (g) ARR map of a MoSe2/WS2 heterostructure measured at 5 K[8].

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Fig. 10.  (Color online) (a) Schematic of the microcavity device embedded with a MoSe2 monolayer and four GaAs quantum wells[35]. (b) The calculated reflectivity spectrum of the Tamm-plasmon microcavity[35]. (c) ARPL of the Tamm microcavity of a MoSe2 monolayer at 4 K[35]. (d) Illustration of a MoSe2 monolayer encapsulated by h-BN is inserted into an F−P microcavity structure and the optical microscope image of the full device[23]. (e) The pump-power dependent polariton dispersions for a MoSe2 microcavity[23].

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Fig. 11.  (Color online) (a) Illustration of the structure of a Tamm microcavity[33]. (b) A Tamm-plasmon microcavity employs a monolayer MoSe2 and four embedded GaAs quantum wells as active layers[36]. (c) Power dependences of PL intensity and linewidth for MoSe2 monolayer, respectively[36]. (d) Blueshift of the polariton mode as a function of excitation power[36]. (e) Schematic of a MoSe2-integrated Tamm microcavity[94]. (f) ARPL map of a Tamm microcavity, in which the UPB and LPB are indicated by black dotted lines[94].

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Fig. 12.  (Color online) (a) The structure of MoSe2/WSe2 heterostructure device[18]. (b) Illustration of Nb-doping mechanism[19]. (c) The rectifying behavior of p−n diode based on MoSe2[19]. (d) The formation process of a p−i−n junction[3]. (e) Light-emitting zones of WSe2, MoSe2 and WS2 devices, respectively[3]. (f) Illustration of a two-terminal LED[3].

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Fig. 13.  (Color online) (a) PL intensity map of MoSe2 monolayer in the range of 683−855 nm[21]. (b) PL spectra of two samples on gold substrates[21]. (c) PL spectra for discrete QDA, QDB, and QDC measured at varied magnetic fields[21]. (d) Illustration of MoSe2 monolayer covering the holes with different sizes to create exciton traps[20]. (e) PL spectra collected at a quantum emitter and a flat region[20]. (f) PL spectra of Moiré-confined interlayer excitons[121].

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Fig. 14.  (Color online) (a) Schematic of a WSe2/MoSe2 heterostructure on the silicon−nitride grating cavity system[22]. (b) Band alignment of a WSe2/MoSe2 heterostructure[22]. (c) The pump power dependences of photon occupancy (Ip) and linewidth[22]. (d) Optical image of the MoSe2/h-BN quantum wells[27]. (e) Illustration of a monolayer MoSe2 integrated with the photonic crystal microcavity[81]. (f) ARR of Dodecanol/MoSe2/Dodecanol-PC on the device with the detuning value of 0.1 ± 0.2 meV approximately[81].

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Table 1.   Strong coupling regime in atomically thin MoSe2.

MaterialsPreparation technique of MoSe2Microcavity typeT (K)Rabi splitting (2hΩ)/
coupling strength (g)		Ref.
1L MoSe2Mechanical exfoliationOpen cavity417.5 meV[33]
F−P cavity429.3 meV
1-dodecanol/1L MoSe2/1-dodecanolMechanical exfoliationPhotonic crystal cavity543 ± 3 meV[81]
1L MoSe2/h-BNMechanical exfoliationF−P cavity4.220 meV[27]
MoSe2/h-BN/MoSe2/h-BN29 meV
1L MoSe2/h-BNCVD growthOpen cavity417 meV[34]
F−P cavity534 ± 4 meV
F−P cavity15031 ± 4 meV
MoSe2/WS2Mechanical exfoliationF−P cavity4g is 17.1 ± 0.1[8]
h-BN/1L MoSe2/h-BNMechanical exfoliationF−P cavity4.215.2 ± 0.1 meV[82]
h-BN/1L MoSe2/h-BNMechanical exfoliationF−P cavity528 meV[29]
1L MoSe2-GaAs quantum wellsMechanical exfoliationTamm cavity4g is 20[35]
1L MoSe2-GaAs quantum wellsMechanical exfoliationTamm cavity4.2g is 20[36]
h-BN/1L MoSe2-GaAs quantum wellCVD growthF−P cavity425 ± 2 meV[23]
1L MoSe2Mechanical exfoliationTamm cavity433.5 meV[33]
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    Received: 12 August 2023 Revised: 23 October 2023 Online: Accepted Manuscript: 02 January 2024Uncorrected proof: 04 January 2024Published: 10 April 2024

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      Article Navigation >  Journal of Semiconductors  > 2024  >  45(4): 041701
      Xinyu Zhang, Xuewen Zhang, Hanwei Hu, Vanessa Li Zhang, Weidong Xiao, Guangchao Shi, Jingyuan Qiao, Nan Huang, Ting Yu, Jingzhi Shang. Light-emitting devices based on atomically thin MoSe2[J]. Journal of Semiconductors, 2024, 45(4): 041701. doi: 10.1088/1674-4926/45/4/041701 X Y Zhang, X W Zhang, H W Hu, V L Zhang, W D Xiao, G C Shi, J Y Qiao, N Huang, T Yu, J Z Shang. Light-emitting devices based on atomically thin MoSe2[J]. J. Semicond, 2024, 45(4): 041701. doi: 10.1088/1674-4926/45/4/041701Export: BibTex EndNote
      Citation:
      Xinyu Zhang, Xuewen Zhang, Hanwei Hu, Vanessa Li Zhang, Weidong Xiao, Guangchao Shi, Jingyuan Qiao, Nan Huang, Ting Yu, Jingzhi Shang. Light-emitting devices based on atomically thin MoSe2[J]. Journal of Semiconductors, 2024, 45(4): 041701. doi: 10.1088/1674-4926/45/4/041701

      X Y Zhang, X W Zhang, H W Hu, V L Zhang, W D Xiao, G C Shi, J Y Qiao, N Huang, T Yu, J Z Shang. Light-emitting devices based on atomically thin MoSe2[J]. J. Semicond, 2024, 45(4): 041701. doi: 10.1088/1674-4926/45/4/041701
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      Light-emitting devices based on atomically thin MoSe2

      doi: 10.1088/1674-4926/45/4/041701
      • 1.

        Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710129, China

      • 2.

        School of Physics and Technology, Wuhan University, Wuhan 430072, China

      • 3.

        Wuhan Institute of Quantum Technology, Wuhan 430206, China

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      • Author Bio:

        Xinyu Zhang Xinyu Zhang received her B.S. degree from Shaanxi University of Science and Technology and her master’s degree from Northeastern University. At present, she is a doctoral student at Northwestern Polytechnical University under the supervision of Prof. Jingzhi Shang. Her research focuses on the light−matter coupling regimes of TMDs materials based on the on-chip optical microcavities

        Ting Yu Ting Yu professor at the School of Physics and Technology of Wuhan University. He received a doctorate degree from the National University of Singapore in 2003, joined Nanyang Technological University in 2005, and was hired as a full professor (tenured position) of NTU, Singapore in 2017. Dr. Yu has received many prestigious awards including Nanyang Excellence Award for Research and Innovation (2008), National Young Scientist Award, National Research Foundation Fellowship Award (2009). His research interests cover the fabrication of 2D materials and the investigation of their optical, optoelectrical, and magnetic properties for developing novel electronics, optoelectronics, and data storage

        Jingzhi Shang Jingzhi Shang is a professor at the Institute of Flexible Electronics of Northwestern Polytechnical University in China. He obtained a bachelor’s degree in physics and a master’s degree in condensed matter physics from Xiamen University in 2006 and 2009, respectively. In 2014, he finished the PHD study at the School of Mathematics and Physics of Nanyang Technological University in Singapore. Then he worked as a research fellow in the same school till 2018. At present, he is interested in optical investigation of two-dimensional semiconductors and their light-emitting devices

      • Corresponding author: yu.ting@whu.edu.cn; iamjzshang@nwpu.edu.cn
      • Received Date: 2023-08-12
      • Revised Date: 2023-10-23
        • Available Online: 2024-01-02

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