J. Semicond. > 2024, Volume 45 > Issue 4 > 042502, doi: 10.1088/1674-4926/45/4/042502
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ARTICLES

High-speed performance self-powered short wave ultraviolet radiation detectors based on κ(ε)-Ga2O3

Aleksei Almaev1, 2, , Alexander Tsymbalov1, Bogdan Kushnarev1, Vladimir Nikolaev3, 4, Alexei Pechnikov4, Mikhail Scheglov4, Andrei Chikiryaka4 and Petr Korusenko5, 6

+ Author Affiliations

 Corresponding author: Aleksei Almaev, almaev_alex@mail.ru

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Abstract: High-speed solar-blind short wavelength ultraviolet radiation detectors based on κ(ε)-Ga2O3 layers with Pt contacts were demonstrated and their properties were studied in detail. The κ(ε)-Ga2O3 layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire substrates. The spectral dependencies of the photoelectric properties of structures were analyzed in the wavelength interval 200–370 nm. The maximum photo to dark current ratio, responsivity, detectivity and external quantum efficiency of structures were determined as: 180.86 arb. un., 3.57 A/W, 1.78 × 1012 Hz0.5∙cm∙W−1 and 2193.6%, respectively, at a wavelength of 200 nm and an applied voltage of 1 V. The enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)−Ga2O3 interface under ultraviolet exposure. The detectors demonstrated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga2O3 interface. The responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%, respectively. The rise and decay times in self-powered mode did not exceed 100 ms.

Key words: κ(ε)-gallium oxide, solar-blind shortwave ultraviolet radiation detectors, self-powered operation mode



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Fig. 1.  (Color online) A schematic view of SBUVD-based on the HVPE deposited κ(ε)-Ga2O3 layer.

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Fig. 2.  (Color online) (a) A typical XRD spectrum of the HVPE deposited κ(ε)-Ga2O3 layer on GaN/Al2O3. (b) Transmission spectrum of the HVPE deposited κ(ε)-Ga2O3 layer. Dependence of α2 on photons energy is shown in insertion. (c) SEM cross-sectional image of the κ(ε)-Ga2O3 layer on GaN/Al2O3.

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Fig. 3.  (Color online) I–V curves of the samples in dark conditions and under radiation exposure.

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Fig. 4.  (Color online) Spectral dependencies of the PDCR (a), R (b), EQE (c) and D (d) of the MSM structures at U = 1 V.

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Fig. 5.  (Color online) Dependencies of the PDCR (a), R (b), EQE (c) and D (d) of the MSM structures on U at λ = 254 nm and P = 620 µW/cm2.

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Fig. 6.  (Color online) Time dependence of the normalized IL at cyclic radiation exposure at λ = 254 nm, P = 620 µW/cm2 and U = 0.

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Table 1.   Comparison of the photoelectric properties of self-powered SBUVDs based on diverse Ga2O3 polymorphs.

MaterialsStructureR (mA/W)τr (ms)τd (ms)References
ε-Ga2O3/GaNHJ43.9120440[55]
Pt/a-Ga2O3/ITOSBD369027*11*[56]
Pt/κ(ε)-Ga2O3/PtMSM0.9<100<100This work
Au/β-Ga2O3 NWsSBD0.011 × 10−36 × 10−2[57]
NiO/a-Ga2O3HJ0.147200*2510*[58]
β-Ga2O3/CuGaO2HJ0.025260*140*[59]
β-Ga2O3/GaNHJ28.4140*70*[60]
Pt/SnxGa1−xO/PtMSM6.960*180*[61]
Pt/Au/β-Ga2O3/Au/PtMSM11.6 × 10−31780*2090*[62]
CuO/β-Ga2O3HJ30.31214[63]
PEDOT:PSS/β-Ga2O3HJ0.242801410[64]
* The time constants corresponded to fast exponents.
DownLoad: CSV
[1]
Kaur D, Kumar M. A strategic review on gallium oxide based deep-ultraviolet photodetectors: Recent progress and future prospects. Adv Opt Mater, 2021, 9, 2002160 doi: 10.1002/adom.202002160
[2]
Hou X H, Zou Y N, Ding M F, et al. Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications. J Phys D Appl Phys, 2021, 54, 043001 doi: 10.1088/1361-6463/abbb45
[3]
Biswas M, Nishinaka H. Thermodynamically metastable α-, ε- (or κ-), and γ-Ga2O3: From material growth to device applications. APL Mater, 2022, 10, 060701 doi: 10.1063/5.0085360
[4]
Chen X H, Ren F F, Gu S L, et al. Review of gallium-oxide-based solar-blind ultraviolet photodetectors. Photonics Res, 2019, 7(4), 381 doi: 10.1364/PRJ.7.000381
[5]
Wu C, Wu F M, Hu H Z, et al. Review of self-powered solar-blind photodetectors based on Ga2O3. Mater Today Phys, 2022, 28, 100883 doi: 10.1016/j.mtphys.2022.100883
[6]
Nikolskaya A, Okulich E, Korolev D, et al. Ion implantation in β-Ga2O3: Physics and technology. J Vac Sci Technol A Vac Surf Films, 2021, 39, 030802 doi: 10.1116/6.0000928
[7]
Titov A I, Karabeshkin K V, Struchkov A I, et al. Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs. Vacuum, 2022, 200, 111005 doi: 10.1016/j.vacuum.2022.111005
[8]
Pearton S, Yang J C, Cary P H, et al. A review of Ga2O3 materials, processing, and devices. Appl Phys Rev, 2018, 5, 011301 doi: 10.1063/1.5006941
[9]
Tetelbaum D, Nikolskaya A, Korolev D, et al. Ion-beam modification of metastable gallium oxide polymorphs. Mater Lett, 2021, 302, 130346 doi: 10.1016/j.matlet.2021.130346
[10]
Yakovlev N, Almaev A, Butenko P, et al. Effect of Si ion implantation in α-Ga2O3 films on their gas sensitivity. IEEE Sens J, 2023, 23, 1885 doi: 10.1109/JSEN.2022.3229707
[11]
Polyakov A, Nikolaev V, Stepanov S, et al. Effects of sapphire substrate orientation on Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy using α-Cr2O3 buffers. J Phys D Appl Phys, 2022, 55, 495102 doi: 10.1088/1361-6463/ac962f
[12]
Fornari R, Pavesi M, Montedoro V, et al. Thermal stability of ε-Ga2O3 polymorph. Acta Mater, 2017, 140, 411 doi: 10.1016/j.actamat.2017.08.062
[13]
Mulazzi M, Reichmann F, Becker A, et al. The electronic structure of ε-Ga2O3. APL Mater, 2019, 7, 022522 doi: 10.1063/1.5054395
[14]
Bosio A, Borelli C, Parisini A, et al. A metal-oxide contact to ε-Ga2O3 epitaxial films and relevant conduction mechanism. ECS J Solid State Sci Technol, 2020, 9, 055002 doi: 10.1149/2162-8777/ab8f37
[15]
Parisini A, Mazzolini P, Bierwagen O, et al. Study of SnO/ɛ-Ga2O3  p– n diodes in planar geometry. J Vac Sci Technol A Vac Surf Films, 2022, 40, 042701 doi: 10.1116/6.0001857
[16]
Gao Y Y, Xu Z R, Tian X S, et al. Synthesis of n-type ZrO2 doped ε-Ga2O3 thin films by PLD and fabrication of Schottky diode. J Alloys Compd, 2022, 900, 163120 doi: 10.1016/j.jallcom.2021.163120
[17]
Cho S B, Mishra R. Epitaxial engineering of polar ε-Ga2O3 for tunable two-dimensional electron gas at the heterointerface. Appl Phys Lett, 2018, 112, 162101 doi: 10.1063/1.5019721
[18]
Leone S, Fornari R, Bosi M, et al. Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors. J Cryst Growth, 2020, 534, 125511 doi: 10.1016/j.jcrysgro.2020.125511
[19]
Wang J, Guo H, Zhu C Z, et al. ε-Ga2O3: A promising candidate for high-electron-mobility transistors. IEEE Electron Device Lett, 2020, 41, 1052 doi: 10.1109/LED.2020.2995446
[20]
Yakimov E B, Polyakov A Y, Nikolaev V I, et al. Electrical and recombination properties of polar orthorhombic κ-Ga2O3 films prepared by halide vapor phase epitaxy. Nanomaterials, 2023, 13, 1214 doi: 10.3390/nano13071214
[21]
Almaev A, Yakovlev N, Kopyev V, et al. High sensitivity low-temperature hydrogen sensors based on SnO2/κ(ε)-Ga2O3: Sn heterostructure. Chemosensors, 2023, 11, 325 doi: 10.3390/chemosensors11060325
[22]
Almaev A, Nikolaev V, Butenko P, et al. Gas sensors based on pseudohexagonal phase of gallium oxide. Phys Status Solidi B Basic Res, 2022, 259, 2100306 doi: 10.1002/pssb.202100306
[23]
Girolami M, Bosi M, Serpente V, et al. Orthorhombic undoped κ-Ga2O3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors. J Mater Chem C, 2023, 11, 3759 doi: 10.1039/D2TC05297K
[24]
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    Received: 21 October 2023 Revised: 21 November 2023 Online: Accepted Manuscript: 09 January 2024Uncorrected proof: 10 January 2024Published: 10 April 2024

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      Article Navigation >  Journal of Semiconductors  > 2024  >  45(4): 042502
      Aleksei Almaev, Alexander Tsymbalov, Bogdan Kushnarev, Vladimir Nikolaev, Alexei Pechnikov, Mikhail Scheglov, Andrei Chikiryaka, Petr Korusenko. High-speed performance self-powered short wave ultraviolet radiation detectors based on κ(ε)-Ga2O3[J]. Journal of Semiconductors, 2024, 45(4): 042502. doi: 10.1088/1674-4926/45/4/042502 A Almaev, A Tsymbalov, B Kushnarev, V Nikolaev, A Pechnikov, M Scheglov, A Chikiryaka, P Korusenko. High-speed performance self-powered short wave ultraviolet radiation detectors based on κ(ε)-Ga2O3[J]. J. Semicond, 2024, 45(4): 042502. doi: 10.1088/1674-4926/45/4/042502Export: BibTex EndNote
      Citation:
      Aleksei Almaev, Alexander Tsymbalov, Bogdan Kushnarev, Vladimir Nikolaev, Alexei Pechnikov, Mikhail Scheglov, Andrei Chikiryaka, Petr Korusenko. High-speed performance self-powered short wave ultraviolet radiation detectors based on κ(ε)-Ga2O3[J]. Journal of Semiconductors, 2024, 45(4): 042502. doi: 10.1088/1674-4926/45/4/042502

      A Almaev, A Tsymbalov, B Kushnarev, V Nikolaev, A Pechnikov, M Scheglov, A Chikiryaka, P Korusenko. High-speed performance self-powered short wave ultraviolet radiation detectors based on κ(ε)-Ga2O3[J]. J. Semicond, 2024, 45(4): 042502. doi: 10.1088/1674-4926/45/4/042502
      Export: BibTex EndNote
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      High-speed performance self-powered short wave ultraviolet radiation detectors based on κ(ε)-Ga2O3

      doi: 10.1088/1674-4926/45/4/042502
      • 1.

        Research and Development Center for Advanced Technologies in Microelectronics, National Research Tomsk State University, Tomsk 634050, Russia

      • 2.

        Fokon LLC, Kaluga 248035, Russia

      • 3.

        Department of Semiconductor Electronics and Physics of Semiconductors, National University of Science and Technology MISIS, Moscow 119049, Russia

      • 4.

        Perfect Crystals LLC, Saint Petersburg 194223, Russia

      • 5.

        Department of Solid-State Electronics, Saint Petersburg State University, Saint Petersburg 199034, Russia

      • 6.

        Department of Physics, Omsk State Technical University, Omsk 644050, Russia

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      • Author Bio:

        Aleksei Almaev Aleksei Almaev is the Head of the Laboratory of Metal Oxide Semiconductors at the Research and Development Center for Advanced Technologies in Microelectronics of the Tomsk State University. He received his Ph.D. in 2018 in Physical and Mathematical Sciences. His research interests are in the area of metal oxides, related devices and functional coatings

        Alexander Tsymbalov Alexander Tsymbalov is a junior researcher at the Laboratory of Metal Oxide Semiconductors at Research and Development Center for Advanced Technologies in Microelectronics of the Tomsk State University. His scientific activities are related to the research and development of ultraviolet detectors based on Ga2O3

      • Corresponding author: almaev_alex@mail.ru
      • Received Date: 2023-10-21
      • Revised Date: 2023-11-21
        • Available Online: 2024-01-09

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