A Novel Method to Determine the Failure Rate Using Process-Stress Accelerated Test

Guo Chunsheng; Li Xiuyu; Zhu Chunjie; Ma Weidong; Lü Changzhi; Li Zhiguo

Article Navigation > Journal of Semiconductors > 2007 > 28(S1): 448-451

Guo Chunsheng, Li Xiuyu, Zhu Chunjie, Ma Weidong, Lü Changzhi, Li Zhiguo. A Novel Method to Determine the Failure Rate Using Process-Stress Accelerated Test[J]. Journal of Semiconductors, 2007, In Press. Guo C S, Li X Y, Zhu C J, Ma W D, Lü C, Li Z G. A Novel Method to Determine the Failure Rate Using Process-Stress Accelerated Test[J]. Chin. J. Semicond., 2007, 28(S1): 448.Export: BibTex EndNote

Citation:

Guo Chunsheng, Li Xiuyu, Zhu Chunjie, Ma Weidong, Lü Changzhi, Li Zhiguo. A Novel Method to Determine the Failure Rate Using Process-Stress Accelerated Test[J]. Journal of Semiconductors, 2007, In Press.

Guo C S, Li X Y, Zhu C J, Ma W D, Lü C, Li Z G. A Novel Method to Determine the Failure Rate Using Process-Stress Accelerated Test[J]. Chin. J. Semicond., 2007, 28(S1): 448.

Export: BibTex EndNote

Citation:

Guo C S, Li X Y, Zhu C J, Ma W D, Lü C, Li Z G. A Novel Method to Determine the Failure Rate Using Process-Stress Accelerated Test[J]. Chin. J. Semicond., 2007, 28(S1): 448.

Export: BibTex EndNote

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A Novel Method to Determine the Failure Rate Using Process-Stress Accelerated Test

College of Electronic Information and Control Engineering，Beijing University of Technology，Beiiing 100022，China,College of Electronic Information and Control Engineering，Beijing University of Technology，Beiiing 100022，China,College of Electronic Information and Control Engineering，Beijing University of Technology，Beiiing 100022，China,College of Electronic Information and Control Engineering，Beijing University of Technology，Beiiing 100022，China,College of Electronic Information and Control Engineering，Beijing University of Technology，Beiiing 100022，China and College of Electronic Information and Control Engineering，Beijing University of Technology，Beiiing 100022，China

Received Date: 2016-05-27
Published Date: 2016-04-28

Abstract

Abstract

A method is presented that enables rapid determination of failure rate and lifetime distribution for semiconductor devices based on the studv of process-stress accelerated life test.Process.stress accelerated test is applied to determine the faillife rate in the method，and the lifetime distribution and failure rate can be determined based on evaluation of the lifetime.To demonstrate the application of the method，it has been applied to a kind of matte products，3DGl30+A process-stress accelerated test was constructed in the ternperature range of 160～3l0℃.Then the related reliable parameters，such as lifetime and failure rate were figured out utilizing the model.Experimental results are in agreement with that in the literature，proving that the method is effective.
- life testing,
- failure rate,
- lifetime distribution

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