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Self-healing wearable self-powered deep ultraviolet photodetectors based on Ga2O3

Chao Wu, Huaile He, Haizheng Hu, Aiping Liu, Shunli Wang, Daoyou Guo and Fengmin Wu

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 Corresponding author: Daoyou Guo, dyguo@zstu.edu.cn; Fengmin Wu, wfm@zstu.edu.cn

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Abstract: Gallium oxide (Ga2O3) based flexible heterojunction type deep ultraviolet (UV) photodetectors show excellent solar-blind photoelectric performance, even when not powered, which makes them ideal for use in intelligent wearable devices. However, traditional flexible photodetectors are prone to damage during use due to poor toughness, which reduces the service life of these devices. Self-healing hydrogels have been demonstrated to have the ability to repair damage and their combination with Ga2O3 could potentially improve the lifetime of the flexible photodetectors while maintaining their performance. Herein, a novel self-healing and self-powered flexible photodetector has been constructed onto the hydrogel substrate, which exhibits an excellent responsivity of 0.24 mA/W under 254 nm UV light at zero bias due to the built-in electric field originating from the PEDOT: PSS/Ga2O3 heterojunction. The self-healing of the Ga2O3 based photodetector was enabled by the reversible property of the synthesis of agarose and polyvinyl alcohol double network, which allows the photodetector to recover its original configuration and function after damage. After self-healing, the photocurrent of the photodetector decreases from 1.23 to 1.21 μA, while the dark current rises from 0.95 to 0.97 μA, with a barely unchanged of photoresponse speed. Such a remarkable recovery capability and the photodetector’s superior photoelectric performance not only significantly enhance a device lifespan but also present new possibilities to develop wearable and intelligent electronics in the future.

Key words: Ga2O3hydrogelsself-poweredself-healingUV photodetector



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[22]
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[24]
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Fig. 1.  (Color online) (a) Schematic diagram of the self-healed PEDOT: PSS/Ga2O3 based UV photodetector. (b) Cross-sectional SEM image of the device. (c) SEM image of the Ga2O3 nanorods. (d) SEM image of the junction and (e) SEM image of the Ag NWs electrode.

Fig. 2.  (Color online) (a) XRD patterns of the Ga2O3 nanorods. (b) The UV-vis absorption spectra and bandgap of Ga2O3. (c) Infrared spectroscopy spectrum and (d) the transmission spectra and UV-vis absorption of PEDOT: PSS films.

Fig. 3.  (Color online) (a) Self-healing of the agarose/PVA hydrogel. (b) Self-healing mechanism of the agarose/PVA DN hydrogel. (c) Photos of hydrogel samples with or without LiCl in -80 °C. (d) Schematic of the hydration of LiCl in water.

Fig. 4.  (Color online) (a) I-V curves of the self-powered photodetector. (b) The photocurrent and responsivity of the photodetector. (c) Energy band diagram of the PEDOT: PSS/Ga2O3. (d) I-t curves of the photodetector before and after self-healing.

[1]
Zhang Q Y, Li N, Zhang T, et al. Enhanced gain and detectivity of unipolar barrier solar blind avalanche photodetector via lattice and band engineering. Nat Commun, 2023, 14, 418 doi: 10.1038/s41467-023-36117-8
[2]
Liu H W, Zhou S R, Zhang H, et al. Ultrasensitive fully transparent amorphous Ga2O3 solar-blind deep-ultraviolet photodetector for corona discharge detection. J Phys D: Appl Phys, 2022, 55, 305104 doi: 10.1088/1361-6463/ac6d26
[3]
Zhou S R, Zhang H, Peng X, et al. Fully transparent and high-performance ε-Ga2O3 photodetector arrays for solar-blind imaging and deep-ultraviolet communication. Adv Photonics Res, 2022, 3, 2200192 doi: 10.1002/adpr.202200192
[4]
Huang L J, Hu Z R, Zhang H, et al. A simple, repeatable and highly stable self-powered solar-blind photoelectrochemical-type photodetector using amorphous Ga2O3 films grown on 3D carbon fiber paper. J Mater Chem C, 2021, 9, 10354 doi: 10.1039/D1TC02471J
[5]
Zhou S R, Peng X, Liu H W, et al. High-performance β-Ga2O3-based solar-blind photodetector with ultralow dark current and fast photoresponse for deep-ultraviolet communication. Opt Mater Express, 2022, 12, 327 doi: 10.1364/OME.449496
[6]
Mohamed H F, Xia C T, Sai Q L, et al. Growth and fundamentals of bulk β-Ga2O3 single crystals. J Semicond, 2019, 40, 011801 doi: 10.1088/1674-4926/40/1/011801
[7]
Lin C N, Lu Y J, Yang X, et al. Diamond-based all-carbon photodetectors for solar-blind imaging. Adv Opt Mater, 2018, 6, 1800068 doi: 10.1002/adom.201800068
[8]
Oh S, Kim C K, Kim J. High responsivity beta-Ga2O3 metal-semiconductor-metal solar-blind photodetectors with ultraviolet transparent graphene electrodes. ACS Photonics, 2018, 5(3), 1123 doi: 10.1021/acsphotonics.7b01486
[9]
Arora K, Goel N, Kumar M, et al. Ultrahigh performance of self-powered beta-Ga2O3 thin film solar-blind photodetector grown on cost-effective si substrate using high-temperature seed layer. ACS Photonics, 2018, 5(6), 2391 doi: 10.1021/acsphotonics.8b00174
[10]
Chen Y C, Lu Y J, Lin C N, et al. Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging. J Mater Chem C, 2018, 6, 5727 doi: 10.1039/C8TC01122B
[11]
Yu J G, Yu M, Wang Z, et al. Improved photoresponse performance of self-powered β-Ga2O3/NiO heterojunction UV photodetector by surface plasmonic effect of Pt nanoparticles. IEEE Trans Electron Devices, 2020, 67, 3199 doi: 10.1109/TED.2020.2999027
[12]
Wu Z P, Jiao L, Wang X L, et al. A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga: ZnO heterojunction. J Mater Chem C, 2017, 5, 8688 doi: 10.1039/C7TC01741C
[13]
Zhang D, Zheng W, Lin R C, et al. Ultrahigh EQE (15%) solar-blind UV photovoltaic detector with organic–inorganic heterojunction via dual built-In fields enhanced photogenerated carrier separation efficiency mechanism. Adv Funct Mater, 2019, 29, 1900935 doi: 10.1002/adfm.201900935
[14]
Yao Y J, Tai H L, Wang D S, et al. One-pot preparation and applications of self-healing, self-adhesive PAA-PDMS elastomers. J Semicond, 2019, 40, 112602 doi: 10.1088/1674-4926/40/11/112602
[15]
Sinton S W. Complexation chemistry of sodium borate with poly(vinyl alcohol) and small diols: A boron-11 NMR study. Macromolecules, 1987, 20, 2430 doi: 10.1021/ma00176a018
[16]
Zhang E Z, Wang T, Zhao L, et al. Fast self-healing of graphene oxide-hectorite clay-poly(N, N-dimethylacrylamide) hybrid hydrogels realized by near-infrared irradiation. ACS Appl Mater Interfaces, 2014, 6, 22855 doi: 10.1021/am507100m
[17]
Schultz R K, Myers R R. The chemorheology of poly(vinyl alcohol)-Borate Gels. Macromolecules, 1969, 2, 281 doi: 10.1021/ma60009a014
[18]
Su J, Liu T, Liu J M, et al. Carbon agent chemical vapor transport growth of Ga2O3 crystal. J Semicond, 2016, 37, 103004 doi: 10.1088/1674-4926/37/10/103004
[19]
Ma T C, Chen X H, Ren F F, et al. Heteroepitaxial growth of thick α-Ga2O3 film on sapphire (0001) by MIST-CVD technique. J Semicond, 2019, 40, 012804 doi: 10.1088/1674-4926/40/1/012804
[20]
Wu C, Wu F, Ma C, et al. A general strategy to ultrasensitive Ga2O3 based self-powered solar-blind photodetectors. Mater Today Phys, 2022, 23, 100643 doi: 10.1016/j.mtphys.2022.100643
[21]
Li S, Yue J Y, Yan Z Y, et al. Enhancing the self-powered performance in VOx/Ga2O3 heterojunction ultraviolet photodetector by hole-transport engineering. J Alloys Compd, 2022, 902, 163801 doi: 10.1016/j.jallcom.2022.163801
[22]
Zhang S M, Chen Y H, Liu H, et al. Room-temperature-formed PEDOT: PSS hydrogels enable injectable, soft, and healable organic bioelectronics. Adv Mater, 2020, 32, 1904752 doi: 10.1002/adma.201904752
[23]
Wang H B, Chen H Y, Li L, et al. High responsivity and high rejection ratio of self-powered solar-blind ultraviolet photodetector based on PEDOT: PSS/β-Ga2O3 organic/inorganic p–n junction. J Phys Chem Lett, 2019, 10, 6850 doi: 10.1021/acs.jpclett.9b02793
[24]
Lin P, Yan X Q, Zhang Z, et al. Self-powered UV photosensor based on PEDOT: PSS/ZnO micro/nanowire with strain-modulated photoresponse. ACS Appl Mater Interfaces, 2013, 5, 3671 doi: 10.1021/am4008775
[25]
Chen W P, Hao D Z, Hao W J, et al. Hydrogel with ultrafast self-healing property both in air and underwater. ACS Appl Mater Interfaces, 2018, 10, 1258 doi: 10.1021/acsami.7b17118
[26]
Bai Y Y, Chen B H, Xiang F, et al. Transparent hydrogel with enhanced water retention capacity by introducing highly hydratable salt. Appl Phys Lett, 2014, 105, 151903 doi: 10.1063/1.4898189
[27]
Cheng Y X, Ye J H, Lai L, et al. Ambipolarity regulation of deep-UV photocurrent by controlling crystalline phases in Ga2O3 nanostructure for switchable logic applications. Adv Electron Mater, 2023, 9, 2201216 doi: 10.1002/aelm.202201216
[28]
Han Y R, Wang Y F, Fu S H, et al. Ultrahigh detectivity broad spectrum UV photodetector with rapid response speed based on p-β Ga2O3/n-GaN heterojunction fabricated by a reversed substitution doping method. Small, 2023, 19, 2206664 doi: 10.1002/smll.202206664

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    Received: 20 February 2023 Revised: 03 April 2023 Online: Accepted Manuscript: 10 May 2023Uncorrected proof: 15 June 2023Corrected proof: 15 June 2023Published: 10 July 2023

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      Chao Wu, Huaile He, Haizheng Hu, Aiping Liu, Shunli Wang, Daoyou Guo, Fengmin Wu. Self-healing wearable self-powered deep ultraviolet photodetectors based on Ga2O3[J]. Journal of Semiconductors, 2023, 44(7): 072807. doi: 10.1088/1674-4926/44/7/072807 C Wu, H L He, H Z Hu, A P Liu, S L Wang, D Y Guo, F M Wu. Self-healing wearable self-powered deep ultraviolet photodetectors based on Ga2O3[J]. J. Semicond, 2023, 44(7): 072807. doi: 10.1088/1674-4926/44/7/072807Export: BibTex EndNote
      Citation:
      Chao Wu, Huaile He, Haizheng Hu, Aiping Liu, Shunli Wang, Daoyou Guo, Fengmin Wu. Self-healing wearable self-powered deep ultraviolet photodetectors based on Ga2O3[J]. Journal of Semiconductors, 2023, 44(7): 072807. doi: 10.1088/1674-4926/44/7/072807

      C Wu, H L He, H Z Hu, A P Liu, S L Wang, D Y Guo, F M Wu. Self-healing wearable self-powered deep ultraviolet photodetectors based on Ga2O3[J]. J. Semicond, 2023, 44(7): 072807. doi: 10.1088/1674-4926/44/7/072807
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      Self-healing wearable self-powered deep ultraviolet photodetectors based on Ga2O3

      doi: 10.1088/1674-4926/44/7/072807
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      • Author Bio:

        Chao Wu obtained his Ph.D. degree from Zhejiang Sci-Tech University. He joined Zhejiang Sci-Tech University in 2022. He focuses on wide bandgap semiconductor materials and devices

        Daoyou Guo obtained his Ph.D. degree from Beijing University of Posts and Telecommunications. He joined Zhejiang Sci-Tech University in 2016. He is currently an Associate Professor in the Department of Physics. His research group focuses on ultra-wide band gap semiconductor Ga2O3 materials and devices

        Fengmin Wu obtained his Ph.D. degree from Zhejiang University. He is a Professor in the Department of Physics in Zhejiang Sci-Tech University. His research group focuses on optoelectronic materials and devices

      • Corresponding author: dyguo@zstu.edu.cnwfm@zstu.edu.cn
      • Received Date: 2023-02-20
      • Revised Date: 2023-04-03
      • Available Online: 2023-05-10

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