| Citation: |
Gao Qun, Zhang Jingwen, Hou Xun. Etching Process of Back-Illuminated ZnO Ultraviolet Focal Plane Array Imagers[J]. Journal of Semiconductors, 2008, In Press.
Gao Q, Zhang J W, Hou X. Etching Process of Back-Illuminated ZnO Ultraviolet Focal Plane Array Imagers[J]. J. Semicond., 2008, 29(12): 2304.
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Etching Process of Back-Illuminated ZnO Ultraviolet Focal Plane Array Imagers
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Abstract
Etching process of back-illuminated ZnO ultraviolet focal plane array imagers was investigated.The etching result of 128×128 array,in which the area of unit cell was 25μm×25μm,was studied.The profile angle was approximately 80°. There was a linear relationship between the etching depth and the etching time.The dependence of etching rate on NH4Cl solution concentration was also studied.The photoresponsivity of the array's unit cells was measured.The UV-to-visible rejection ratio was around 60∶1.-
Keywords:
- etching,
- NH4Cl,
- focal plane array
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References
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