| Citation: |
Zhang Lei, Yang Ruixia, Wu Yibin, Shang Yaohui, Gao Jinhuan. Design,Fabrication,and Analysis of a Resonant Tunneling Diode[J]. Journal of Semiconductors, 2007, In Press.
Zhang L, Yang R X, Wu Y B, Shang Y H, Gao J H. Design,Fabrication,and Analysis of a Resonant Tunneling Diode[J]. Chin. J. Semicond., 2007, 28(5): 737.
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Design,Fabrication,and Analysis of a Resonant Tunneling Diode
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Abstract
AlAs/GaAs/InGaAs double barrier-single well structures are grown on semi-insulating GaAs substrates by molecular beam epitaxy.By improving on material growth design and process design,the maximum PVCR of the RTD has reached 2.4,and the density of the peak current has reached 36.8kA/cm2.The parameters and I-V characteristics of the RTD have been measured,and the effects of quantum well width and thickness of the cap layer on the RTD I-V characteristics are analyzed. -
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