Chin. J. Semicond. > 2005, Volume 26 > Issue 1 > 62-66
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HgCdTe钝化过程中形成的镶嵌结构及其热处理效应

孙涛 , 王庆学 , 陈文桥 , 梁晋穗 , 陈兴国 , 胡晓宁 and 李言谨

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Abstract: 通过高分辨X射线衍射仪中的二维点阵研究了溅射的CdTe介质膜对HgCdTe外延层的影响．发现在高溅射能量下沉积的钝化膜由于应力的作用，HgCdTe晶片出现弯曲及大量镶嵌结构，而这种镶嵌结构可通过合理的热处理工艺消除．

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(1): 62-66
      HgCdTe钝化过程中形成的镶嵌结构及其热处理效应[J]. Journal of Semiconductors, 2005, In Press. HgCdTe钝化过程中形成的镶嵌结构及其热处理效应[J]. Chin. J. Semicond., 2005, 26(1): 62.Export: BibTex EndNote
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      HgCdTe钝化过程中形成的镶嵌结构及其热处理效应[J]. Journal of Semiconductors, 2005, In Press.

      HgCdTe钝化过程中形成的镶嵌结构及其热处理效应[J]. Chin. J. Semicond., 2005, 26(1): 62.
      Export: BibTex EndNote
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      HgCdTe钝化过程中形成的镶嵌结构及其热处理效应

      • Received Date: 2015-08-19

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