Chin. J. Semicond. > 1996, Volume 17 > Issue 5 > 339-346
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全耗尽SOI　nMOSFET的浮体效应物理模型

奚雪梅，王阳元

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    Received: 18 August 2015 Revised: Online: Published: 01 May 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(5): 339-346
      奚雪梅，王阳元. 全耗尽SOI　nMOSFET的浮体效应物理模型[J]. 半导体学报(英文版), 1996, 17(5): 339-346.
      Citation:
      奚雪梅，王阳元. 全耗尽SOI　nMOSFET的浮体效应物理模型[J]. 半导体学报(英文版), 1996, 17(5): 339-346.
      shu

      • Received Date: 2015-08-18

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