| Citation: |
Dai Zhenhong, Ni Jun. Effect of Relaxation Time on Electron Transport Properties in Double-Barrier Structures[J]. Journal of Semiconductors, 2006, In Press.
Dai Z H, Ni J. Effect of Relaxation Time on Electron Transport Properties in Double-Barrier Structures[J]. Chin. J. Semicond., 2006, 27(4): 604.
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Effect of Relaxation Time on Electron Transport Properties in Double-Barrier Structures
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Abstract
Using a time-dependent quantum-kinetic simulation for the non-equilibrium electron transport properties of double-barrier devices,we have investigated and analyzed the effects of the relaxation time on electron transport properties in this kind of low dimensional structure.The results show that the relaxation time,which comes from the electron-phonon and electron-defect interactions,greatly affects the current-voltage curves,including the plateau-like gradient and hysteresis width of the current.-
Keywords:
- non-equilibrium,
- Wigner function,
- electron transport
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References
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Proportional views
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