| Citation: |
Jiang Lijuan, Wang Xiaoliang, Liu Chao, Xiao Hongling, Wang Cuimei, Ran Junxue, Hu Guoxin, Li Jianping. Ferromagnetic GaCrN Films Fabricated by Dual-Energy Implantation of Cr+[J]. Journal of Semiconductors, 2007, In Press.
Jiang L J, Wang X L, Liu C, Xiao H L, Wang C M, Ran J X, Hu G X, Li J P. Ferromagnetic GaCrN Films Fabricated by Dual-Energy Implantation of Cr+[J]. Chin. J. Semicond., 2007, 28(S1): 341.
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Ferromagnetic GaCrN Films Fabricated by Dual-Energy Implantation of Cr+
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Abstract
：GaCrN ferromagnetic films with a thickness of 200nm are successfully prepared bv Cr+implantation at two ener. gies into n-GaN，p-GaN，and unintentionally doped GaN epilayers grown on sapphire substrates by MoCVD，followed by a short anneal to remove implantation damage.Powder X.ray diffraction is carried out to investigate the phase composition of the films.Magnetic properties determined from SQUID indicate a connection between the saturation magnetization and the initial carrier concentration of the samples，as in our experiment，post-implanted n.GaN and P.GaN show much stronger mag. netization than that of unintentiOnaUv doped GaN samples.-
Keywords:
- diluted magnetic semiconductor,
- GaCrN,
- ion implantation
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References
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Proportional views
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