Citation: |
Xie Bin, Xue Chenyang, Zhang Wendong, Xiong Jijun, Zhang Binzhen. Mechanical-Electrical Coupling of Double-Barrier Quantum Well Membrane[J]. Journal of Semiconductors, 2007, 28(8): 1211-1215.
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Xie B, Xue C Y, Zhang W D, Xiong J J, Zhang B Z. Mechanical-Electrical Coupling of Double-Barrier Quantum Well Membrane[J]. Chin. J. Semicond., 2007, 28(8): 1211.
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Mechanical-Electrical Coupling of Double-Barrier Quantum Well Membrane
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Abstract
An AlAs/GaAs superlattice quantum well membrane is grown by MBE on (001)-oriented GaAs substrates.A mechanical-electrical coupling experiment on this membrane under (110) and (110) uniaxial pressure is conducted,and the pressure-dependent current-voltage characteristics are tested.Under (110) stress,the resonance peaks shift to more positive voltages,while under (110) stress,the peaks shift toward more negative voltages.The mechanism that induces this phenomenon is discussed.The result agrees well with that of the Meso-piezoresistive theory. -
References
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