| Citation: |
Zhao Hong, Zou Zeya, Zhao Wenbai, Liu Ting, Yang Xiaobo, Liao Xiuying, Wang Zhen, Zhou Yong, Liu Wanqing. Epitaxial Growth of Atomically Flat AlN Layers on Sapphire Substrate by Metal Organic Chemical Vapor Deposition[J]. Journal of Semiconductors, 2007, In Press.
Zhao H, Zou Z Y, Zhao W B, Liu T, Yang X B, Liao X Y, Wang Z, Zhou Y, Liu W Q. Epitaxial Growth of Atomically Flat AlN Layers on Sapphire Substrate by Metal Organic Chemical Vapor Deposition[J]. Chin. J. Semicond., 2007, 28(10): 1568.
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Epitaxial Growth of Atomically Flat AlN Layers on Sapphire Substrate by Metal Organic Chemical Vapor Deposition
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Abstract
AlN layers were grown on sapphire substrate by metal organic chemical vapor deposition (MOCVD) at 1200℃,5kPa.Atomically flat epilayers were obtained at a low V/III flow ratio without nitridation on the substrate.Atomic force microscopy (AFM) reveals a roughness of around 0.44nm for the atomically flat layers with an FWHM of (0002) X-ray diffraction rocking curve around 166" .Analysis of the growth results demonstrates that the polarity of the AlN layer and vapor phase reaction between NH3 and the Al-precursor are the primary factors affecting the AlN surface morphology.High quality n-doped AlGaN layers with high Al content were obtained using the as-grown atomically flat AlN layers,implying the good quality of the layers as epitaxial template.-
Keywords:
- MOCVD,
- AlN,
- polarity,
- atomically flat
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