| Citation: |
Xia Dongmei, Wang Ronghua, Wang Qi, Han Ping, Mei Qin, Chen Gang, Xie Zili, Xiu Xiangqian, Zhu Shunming, Gu Shulin, Shi Yi, Zhang Rong, Zheng Youdou. Carriers Distribution of Si-1xGex：C Buffers Grown on Si(100) by Chemical Vapor Deposition[J]. Journal of Semiconductors, 2007, In Press.
Xia D M, Wang R H, Wang Q, Han P, Mei Q, Chen G, Xie Z L, Xiu X Q, Zhu S M, Gu S L, Shi Y, Zhang R, Zheng Y D. Carriers Distribution of Si-1xGex：C Buffers Grown on Si(100) by Chemical Vapor Deposition[J]. Chin. J. Semicond., 2007, 28(S1): 111.
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Carriers Distribution of Si-1xGex：C Buffers Grown on Si(100) by Chemical Vapor Deposition
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Abstract
Ge graded Si1-xGex：C buffers are deposited on p-Si(100)substrates by chemical vapor deposition (CVD) method.The results show that the higher growth temperature is，the more Ge concentration and the better crystal quality will get. Except for a local n-type zone，the buffer is P-type and the concentration of the above carriers increases from the substrate to the surface.The conductive distribution of the above carriers iS also discussed.-
Keywords:
- CVD,
- Si1-xGex：C buffers,
- carriers
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References
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Proportional views
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