| Citation: |
Zhou Huiying, Qu Shengchun, Liu Junpeng, Wang Zhanguo. Formation and Diffusion of Ordered Quantum Clusters on (001) GaAs Substrate Induced by Masked Ion Implantation[J]. Journal of Semiconductors, 2007, In Press.
Zhou H Y, Qu S C, Liu J P, Wang Z G. Formation and Diffusion of Ordered Quantum Clusters on (001) GaAs Substrate Induced by Masked Ion Implantation[J]. Chin. J. Semicond., 2007, 28(S1): 208.
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Formation and Diffusion of Ordered Quantum Clusters on (001) GaAs Substrate Induced by Masked Ion Implantation
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Abstract
Ion implantation technology is an important way to prepare low dimension structure materials.It can form uniform and ordered nanoclusters through controlling implantation energy，implantation dose and temperature.High energy Indium ions are implanted into GaAs(001) substrate selectively through using anodic alumina templates and uniform and ordered nanoclusters arb obtained.We observe that diffusion of adatoms in GaAs (001) substrate is anisotropy and diffusion increases with the increase of annealing temperature.-
Keywords:
- ion implantation technology,
- indium ions,
- anisotropy,
- diffusion
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References
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Proportional views
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