| Citation: |
JIA Hong-yong, LIU Zhi-nong, LI Gao-qing, QIAN Pei-xin. SiGe HBT Class AB Power Amplifier for Wireless Communications[J]. Journal of Semiconductors, 2002, In Press.
. SiGe HBT Class AB Power Amplifier for Wireless Communications[J]. J. Semicond, 2002, In Press.
Export: BibTex EndNote
|
SiGe HBT Class AB Power Amplifier for Wireless Communications
-
Abstract
Good performance SiGe power amplifiers applicable to wireless communications are demonstrated. The output power can reach more than 30 dBm in class B mode. And in class AB mode, the output power at 1dB compression point (P1dB) is 24 dBm, the output third order intercept (TOI) power is 39 dBm under Vcc of 4 V. The highest power added efficiency (PAE) and PAE at 1 dB compression point are 34% and 25%, respectively. The adjacent channel power rejection for CDMA signal is more than 42 dBc, which complies with IS95 specification.
-
Keywords:
- SiGe,
- HBT,
- microwave power amplifier
-
References
-
Proportional views
DownLoad: