| Citation: |
XU Xian-gang, LIU Zhe, CUI De-liang. GaAsSb/InP HBT Growth on InP Substrates[J]. Journal of Semiconductors, 2002, In Press.
. GaAsSb/InP HBT Growth on InP Substrates[J]. J. Semicond, 2002, In Press.
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GaAsSb/InP HBT Growth on InP Substrates
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Abstract
InP/GaAs0.5Sb0.5/InP DHBT (double heterojunction bipolar transistor) is grown by MOCVD (metalorganic chemical vapor deposition). The influence of material quality on device performance is studied. DHBTs with high quality epilayers show good direct current and microwave performance, which are in agreement with energy band engineering. The collector and base current ideality factors are 1.00 and 1.06, respectively. The DHBTs breakdown voltage can be as high as 15 V, and microwave measurements indicate a current gain cutoff frequency fT of over 100 GHz .
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