Fig. 1.
The cross-section of the flash cell structure.
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Weiyan Zhang, Tao Yu, Zhifeng Zhu, Binghan Li. Temperature-insensitive reading of a flash memory cell[J]. Journal of Semiconductors, 2023, 44(4): 044102. doi: 10.1088/1674-4926/44/4/044102
W Y Zhang, T Yu, Z F Zhu, B H Li. Temperature-insensitive reading of a flash memory cell[J]. J. Semicond, 2023, 44(4): 044102. doi: 10.1088/1674-4926/44/4/044102
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Temperature-insensitive reading of a flash memory cell
doi: 10.1088/1674-4926/44/4/044102
More Information-
Abstract
The temperature characteristics of the read current of the NOR embedded flash memory with a 1.5T-per-cell structure are theoretically analyzed and experimentally verified. We verify that for a cell programmed with a “10” state, the read current is either increasing, decreasing, or invariable with the temperature, essentially depending on the reading overdrive voltage of the selected bitcell, or its programming strength. By precisely controlling the programming strength and thus manipulating its temperature coefficient, we propose a new setting method for the reference cells that programs each of reference cells to a charge state with a temperature coefficient closely tracking tail data cells, thereby solving the current coefficient mismatch and improving the read window.-
Keywords:
- flash memory,
- temperature coefficient,
- reference cell,
- flash array
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References
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